View IRLMS6702PBF_7193167.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRLMS6702PBF v dss = -20v r ds(on) = 0.20 ? hexfet ? power mosfet fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the micro6 ? package with its customized leadframe produces a hexfet ? power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal for applications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300% compared to the sot-23.

! "
# $ % &'() " *+) ' , !-! .!/)-0!-! 1)!+' 2$/' 3 top view 1 2 d g a d d d s 3 4 5 6
/ 4 5221)26 777 777 %

www.irf.com 1 micro6 ?

2 www.irf.com

+) 8.!# ' 777 777

9 ? ? 8.!# ' 2$ ::) 777 777 /: )
2 777 777

; 777 777 "

<
* == ! ' 777 777

9 ' (#! )!)) 777 777 +

< 777 777
;
777 777
;

*+) (#! &.' 777 777
*+) /- &.' 777 777
> * =' 777 < <<
; > *+) =' 777 < ;
; > *?@4 @a =' 777 "
+(';!
b 0 2 777 " 777
/ 2 777 777
;
b:: 0 2 777 777 /
; ? ( 2 777 < 777 /
; ?, +(' $ $)) 777 777
b$ $)) 777 " 777 $(
/- : $)) 777 " 777 c
4de+('
!"# 9 ? /
+)+)b/) +)&.'

+) 4b+(f 026 ?8!0!a =#'= !+) ' - ?8!0!a $g)!! !(#! ' 777 777

;
/-/)-0 2 777 "

; > /-/)-0 =' 777 !!
9 $ %

" " 777 777 777 777 s d g /$-'h$ #!= 2!60 25g)2$?+:'a i sd ; !! 9
#!= "9h!0)0) i +:)2!(/6! )

www.irf.com 3
!
!!
!! 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -1.6a v = -4.5v d gs

4 www.irf.com
"#!$%&
'% '$! %
$! %
$! ()% 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -1.6a v = -16v for test circuit see figure 9 d ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1. 4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d a j 100s 1ms 10ms

www.irf.com 5 $) % *+ $) % ! , '%*+ '% ! 1 ! 0.1 % / / j + - q g q gs q gd v g charge v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - "#!- + . /0! &1 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

6 www.irf.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - / ? !-!) !60/ ? ) !600()@@ ? j -)j!

)&0 ! ? &#+0!)) ? *! ? &#&.'!)) :2 2 /- 0:j : = 2 k 22 34 222
:&')&- !"--) !!! for p-channel hexfet ? power mosfets

www.irf.com 7 micro6 (sot23 6l) part marking information micro6 (sot23 6l) package outline dimensions are shown in milimeters (inches) lead assignments recommended footprint dd d d s g 1 2 3 6 5 4 0 -10 o o 0.60 (.023 ) 0.10 (.004 ) 0.20 (.007 ) 0.09 (.004 ) 6x 1.30 (.051 ) 0.90 (.036 ) -c- 0.15 (.006 ) max. 1.45 (.057 ) 0.90 (.036 ) 6 surfaces 0.10 (.004 ) 0.50 (.019 ) 0.35 (.014 ) 6x 2x 0.95 ( .0375 ) 1.75 (.068 ) 1.50 (.060 ) -a- 3.00 (.118 ) 2.80 (.111 ) -b- 3.00 (.118 ) 2.60 (.103 ) 1 2 3 6 5 4 6x 0.65 (.025 ) 2.20 (.087 ) 6x (1.06 (.042 ) 2x 0.95 (.0375 ) n otes : 1 . dimensioning & tolerancing per ansi y14.5m-1982. 2 . controlling dimension : millimeter. 3 . dimensions are shown in millimeters (inches). 0.15 (.006 ) m c a s b s e h = irlms6803 2005 w = (1-26) if preceded by las t digit of calendar year w = (27-52) if preceded by a letter a = i r l ms 19 02 b = irlms1503 c = i r l ms 67 02 d = irl ms 5703 f = irlms4502 e = irlms6802 g = i r l ms 2 00 2 part number code reference: part number y = year w = we e k top code lot x 24 0 2010 we e k wor k 04 4 2004 2001 year 2002 2003 01 1 y 2 3 02 03 2007 2005 2006 2009 2008 7 5 6 8 9 d a w b c we e k wor k 25 26 2002 year 2001 2003 2004 28 b y a27 c d 29 30 y z b w a c d (as s hown here) indicates l ead-f ree. n ote: a l i ne above the wor k week 51 2008 2006 2007 2009 2010 h f g j k50 52 y x z

8 www.irf.com

!"# $% & ' (! #)*(!# &% +,' (! #)* ! - . . ! micro6 tape & reel information dimensions are shown in milimeters (inches) 8mm feed direction 4mm n otes : 1 . outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site.

▲Up To Search▲

Price & Availability of IRLMS6702PBF

	To Download IRLMS6702PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .