1999. 3. 9 1/3 semiconductor technical data bc856/7/8 epitaxial planar pnp transistor revision no : 3 general purpose application. switching application . features for complementary with npn type bc846/847/848. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ characteristic symbol rating unit collector-base voltage bc856 v cbo -80 v BC857 -50 bc858 -30 collector-emitter voltage bc856 v ceo -65 v BC857 -45 bc858 -30 emitter-base voltage bc856 v ebo -5 v BC857 -5 bc858 -5 collector current i c -100 ma emitter current i e 100 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 mark spec type name marking lot no. p c * : package mounted on 99.5% alumina 10 8 0.6mm. type bc856a bc856b BC857a BC857b BC857c bc858a bc858b bc858c mark 3a 3b 3e 3f 3g 3j 3k 3l
1999. 3. 9 2/3 bc856/7/8 revision no : 3 electrical characteristics (ta=25 ) note : according to the value of h fe the bc856, BC857, bc858 are classified as follows. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -15 na dc current gain (note) bc856 h fe v ce =-5v, i c =-2ma 125 - 475 BC857 125 - 800 bc858 125 - 800 collector-emitter saturation voltage v ce(sat) 1 i c =-10ma, i b =-0.5ma - -0.09 -0.3 v v ce(sat) 2 i c =-100ma, i b =-5ma - -0.25 -0.65 base-emitter saturation voltage v be(sat) 1 i c =-10ma, i b =-0.5ma - -0.7 - v v be(sat) 2 i c =-100ma, i b =-5ma - -0.9 - base-emitter voltage v be(on1) v ce =-5v, i c =-2ma -0.6 -0.65 -0.75 v base-emitter voltage v be(on2) v ce =-5v, i c =-10ma - - -0.82 v transition frequency f t v ce =-5v, i c =-10ma, f=100mhz - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.5 - pf noise figure nf v ce =-6v, i c =-0.2ma r g =2k , f=1khz - 2.0 10 db classification a b c h fe bc856 125 250 220 475 - BC857 125 250 220 475 420 800 bc858 125 250 220 475 420 800
1999. 3. 9 3/3 bc856/7/8 revision no : 3 c collector current i (ma) 0 collector current i (ma) c -0.1 -0.2 base-emitter voltage v (v) be 0 collector-emitter voltage v (v) ce ce c i - v i - v collector-base voltage v (v) capacitance c (pf) ob 10 1 -1 -3 20 cb -10 -30 c - v collector current i (ma) dc current gain h -0.1 -0.3 fe -1 -3 c h - i -4 -8 -12 -16 -20 -10 -20 -30 -40 -50 i =-400 a b i =-350 a b i =-50 a b i =-100 a b i =-150 a b i =-200 a b i =-250 a b i =-300 a b cbe -0.4 -0.6 -0.8 -1.0 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 v =-5v ce fe c -10 -30 -100 10 30 50 100 300 500 1k saturation voltage -1 collector current i (ma) -0.1 -0.01 -0.03 -0.1 -0.3 -30 -3 -10 c -100 be(sat) -0.3 -1 v , v - i be(sat) c ce(sat) v , v (v) ce(sat) -3 -10 i /i =20 c b v be(sat) v ce(sat) ob cb -100 -200 3 5 f=1mhz i =0 e v =-5v ce
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