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microwave power gaas fet microwave semiconductor TIM1414-5-252 technical data features ? high power ? broad band internally matched fet p1db=37.5 dbm at 13.75 ghz to 14.5 ghz ? hermetically sealed package ? high gain g1db=5.5 db at 13.75 ghz to 14.5 ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 36.5 37.0 ? power gain at 1db gain compression point g 1db db 4.5 5.5 ? drain current i ds1 a ? 2.0 2.5 power added efficiency add vds= 9v f= 13.75 to 14.5ghz % ? 20 ? channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg) : rg= 150 ? (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 2.4 a ms ? 1500 ? pinch-off voltage v gsoff v ds = 3v i ds = 72ma v -1.5 -3.0 -4.5 saturated drain current i dss v ds = 3v v gs = 0v a ? 5.0 ? gate-source breakdown voltage v gso i gs = -72 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 3.0 3.7 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jul. 2006
TIM1414-5-252 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 5.7 total power dissipation (tc= 25 c) p t w 40.5 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-9d1b) handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2 unit: mm (1) gate (2) source (3) drain
TIM1414-5-252 rf performance output power (pout) vs. frequency v ds =9v i ds ? 2.0a pin=32.5 dbm 3 13.75 14.1 14.5 39 38 37 36 frequency(ghz) 35 pout(dbm) 41 40 39 38 37 36 35 34 output power(pout) vs. input power(pin) freq.=14.5ghz v ds =9v i ds ? 2.0a pout 80 60 40 20 0 add pout(dbm) add(%) 33 32 25 27 29 31 33 35 pin(dbm)
TIM1414-5-252 power dissipation(pt) vs. case temperature(tc) 4 tc( c ) 0 40 80 120 160 200 40 30 20 10 0 pt(w)

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