parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 90 i c @ t c = 100c continuous collector current 60 a i cm pulsed collector current 120 i lm clamped inductive load current 120 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 200 mj p d @ t c = 25c maximum power dissipation 520 p d @ t c = 100c maximum power dissipation 210 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbfin (1.1nm) maximum reflow temperature 230 (time above 183c should not exceed 100s) irg4pc60f-p fast speed igbt insulated gate bipolar transistor e c g n-channel features features features features features fast: optimized for medium operating frequencies ( 1-5 khz in hard switching, >20 khz in resonant mode). generation 4 igbt design provides tighter parameter distribution and higher efficiency. solder plated version of industry standard to-247ac package. generation 4 igbt's offer highest efficiency available. igbt's optimized for specified application conditions. solder plated version of the to-247 allows the reflow soldering of the package heatsink to a substrate material. designed for best performance when used with ir hexfred & ir fred companion diodes. benefits v ces = 600v v ce(on) typ. = 1.50v @v ge = 15v, i c = 60a 04/26/02 parameter typ. max. units r jc junction-to-case ??? 0.24 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient (typical socket mount) ??? 40 r ja junction-to-ambient (pcb mount, steady state) ??? 20 wt weight 6 (0.21) ??? g (oz) thermal resistance absolute maximum ratings w www.irf.com 1 pd - 94440 to-247ac c
irg4pc60f-p 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 290 340 i c = 40a q ge gate - emitter charge (turn-on) ? 40 47 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 100 130 v ge = 15v t d(on) turn-on delay time ? 42 ? t r rise time ? 66 ? t j = 25c t d(off) turn-off delay time ? 310 360 i c = 60a, v cc = 480v t f fall time ? 170 220 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 0.30 ? energy losses include "tail" e off turn-off switching loss ? 4.6 ? mj see fig. 10, 11, 13, 14 e ts total switching loss ? 4.9 6.3 t d(on) turn-on delay time ? 39 ? t j = 150c, t r rise time ? 66 ? i c = 60a, v cc = 480v t d(off) turn-off delay time ? 470 ? v ge = 15v, r g = 5.0 ? t f fall time ? 300 ? energy losses include "tail" e ts total switching loss ? 8.8 ? mj see fig. 13, 14 l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 6050 ? v ge = 0v c oes output capacitance ? 360 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 66 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 16 ? ? v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.13 ? v/c v ge = 0v, i c = 1.0ma ? 1.5 1.8 i c = 60a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 1.7 ? i c = 90a see fig.2, 5 ? 1.5 ? i c = 60a , t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 36 69 ? s v ce = 100v, i c = 60a ? ? 250 v ge = 0v, v ce = 600v ? ? 2.0 v ge = 0v, v ce = 10v, t j = 25c ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 n a v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns pulse width 5.0s, single shot. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. refer to application note # 1023, "surface mounting of larger devices." notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, rg = 5.0w. (see fig. 13a) repetitive rating; pulse width limited by maximum junction temperature. pulse width 80s; duty factor 0.1%.
irg4pc60f-p www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.0 1.0 2.0 3.0 4.0 5.0 v ce , collector-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c , collector t-to-emitter current (a) t j = 150c t j = 25c v ge = 15v 20s pulse width 4567891011 v ge, gate-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c, collector-to-emitter current (a) t j = 150c t j = 25c v cc = 10v 5s pulse width 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 load current ( a ) duty cycle : 50% tj = 125c tsink = 90c ta = 55c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 73w for heatsink mount power dissipation = 3.5w for typical pcb socket mount 60% of rated voltage ideal diodes
irg4pc60f-p 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1.0 2.0 3.0 v ce , collector-to emitter voltage (v) i c = 120a v ge = 15v 80s pulse width i c = 60a i c = 30a 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 100 maximum dc collector current (a) v ge = 15v
irg4pc60f-p www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 50 100 150 200 250 300 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 40a cc c 0 10 20 30 40 50 r g , gate resistance ( ? ) 4.00 5.00 6.00 7.00 8.00 total switching losses (mj) v cc = 480v v ge = 15v t j = 25c i c = 60a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1 10 100 total switching losses (mj) r g = 5.0 ? v ge = 15v v cc = 480v i c = 120a i c = 60a i c = 30a 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 100000 capacitance (pf) cies coes cres v ge = 0v, f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c ce c oes = c ce + c gc
irg4pc60f-p 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 30 50 70 90 110 130 i c , collector current (a) 0.0 10.0 20.0 30.0 total switching losses (mj) r g = 5.0 ? tj = 150c v ge = 15v v cc = 480v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i c , collector-to-emitter current (a) v ge = 20v t j = 125 safe operating area
irg4pc60f-p www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
irg4pc60f-p 8 www.irf.com case outline and dimensions ? to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 c o n fo r m s to je d e c o u tlin e to-247ac. lead assignments 1 - g a t e 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r * longer leaded ( 20m m ) version available ( to-247ad ) to order add "-e" suffix to part number data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/02
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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