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0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2pd602a features high current (max. 500 ma) low voltage (max. 50 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current (dc) i c 500 ma peak collector current i cm 1a peak base current i bm 200 ma total power dissipation tamb 25 ;* p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min max unit i e =0;v cb = 60 v 10 na i e =0;v cb =60v;t j =150 5a emitter cut-off current i ebo i c =0;v eb =4v 10 na dc current gain 2pd602aq 85 170 2pd602ar 120 240 2PD602AS 170 340 dc current gain h fe i c =500ma;v ce =10v;* collector-emitter saturation voltage v cesat i c =300ma;i b =30ma;* 600 mv collector capacitance c c i e =ie=0;v cb =10v;f=1mhz 15 pf transition frequency 2pd602aq 140 2pd602ar 160 2PD602AS 180 * pulse test: tp 300 s; ? 0.02. mhz f t i c =50ma;v ce =10v;f=100mhz* i cbo collector cut-off current h fe i c =150ma;v ce =10v;* marking type number 2pd602aq 2pd602ar 2PD602AS hfe xq xr xs 2pd602a product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123 |
Price & Availability of 2PD602AS
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