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  pb rohs ec2525etts-70.656m ec25 25 et ts -70.656m series rohs compliant (pb-free) 5.0v 4 pad 5mm x 7mm ceramic smd hcmos/ttl oscillator frequency tolerance/stability 25ppm maximum operating temperature range -40c to +85c duty cycle 50 10(%) nominal frequency 70.656mhz load drive capability low drive pin 1 connection tri-state (high impedance) electrical specifications nominal frequency 70.656mhz frequency tolerance/stability 25ppm maximum (inclusive of all conditions: calibration tolerance at 25c, frequency stability over the operating temperature range, supply voltage change, ouput load change, first year aging at 25c, shock, and vibration) aging at 25c 5ppm/year maximum operating temperature range -40c to +85c supply voltage 5.0vdc 10% input current 60ma maximum (no load) output voltage logic high (voh) 2.4vdc minimum with ttl load, vdd-0.5vdc minimum with hcmos load input current logic high (ioh) -16ma output voltage logic low (vol) 0.4vdc maximum with ttl load, 0.5vdc maximum with hcmos load input current logic low (iol) 16ma rise/fall time 5nsec maximum (measured at 0.4vdc to 2.4vdc with ttl load; measured at 10% to 90% of waveform with hcmos load) duty cycle 50 10(%) (measured at 50% of waveform with hcmos load or with ttl load) load drive capability low drive (10lsttl load or 15pf hcmos load maximum) output logic type cmos pin 1 connection tri-state (high impedance) tri-state input voltage (vih and vil) +2.0vdc minimum to enable output, +0.8vdc maximum to disable output (high impedance), no connect to enable output. rms phase jitter 1psec maximum (12khz to 20mhz offset frequency) start up time 10msec maximum storage temperature range -55c to +125c environmental & mechanical specifications fine leak test mil-std-883, method 1014, condition a gross leak test mil-std-883, method 1014, condition c mechanical shock mil-std-202, method 213, condition c resistance to soldering heat mil-std-202, method 210 resistance to solvents mil-std-202, method 215 solderability mil-std-883, method 2003 temperature cycling mil-std-883, method 1010 vibration mil-std-883, method 2007, condition a www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 1 of 6
ec2525etts-70.656m mechanical dimensions (all dimensions in millimeters) pin connection 1 tri-state 2 ground 3 output 4 supply voltage line marking 1 ecliptek 2 70.656m 3 xxyzz xx=ecliptek manufacturing code y=last digit of the year zz=week of the year 2.88 1.81 2.0 (x4) 2.2 (x4) www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 2 of 6 1.60 0.20 5.00 0.15 7.00 0.15 marking orient a tion 3.68 0.15 1.4 01 1.2 0.2 2.60 0.15 5.08 0.15 1 2 3 4 all t oler ances are 0.1 sug g ested solder p ad la y out solder land (x4) all dimensions in millimeters
ec2525etts-70.656m www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 3 of 6 output disable (high imped ance st a te) output w a veform & timing dia gram v oh v ol 90% or 2.4v dc 50% or 1.4v dc 10% or 0.4v dc f all time rise time t w t duty cycle (%) = t w /t x 100 v ih v il t plz t pzl clock output tri-st a te input supply v oltage (v dd ) t est cir cuit f or ttl output output no connect or t r i-state ground + + + + _ _ _ _ p o w er supply v oltage meter current meter 0.01 f (note 1) 0.1 f (note 1) c l (note 3) r l (note 4) p o w er supply oscilloscope f requency counter probe (note 2) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . note 4: resistance v alue r l is sho wn in t ab le 1. see applicab le specification sheet f or 'load dr iv e capability'. note 5: all diodes are mmbd7000, mmbd914, or equiv alent. t ab le 1: r l resistance v alue and c l capacitance v alue vs . output load dr iv e capability output load drive capability r l v alue (ohms) c l v alue (pf) 10ttl 5ttl 2ttl 10lsttl 1ttl 390 780 1100 2000 2200 15 15 6 15 3
ec2525etts-70.656m www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 4 of 6 supply v oltage (v dd ) t est cir cuit f or cmos output output no connect or t r i-state ground + + + _ _ _ p o w er supply 0.01 f (note 1) 0.1 f (note 1) c l (note 3) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . v oltage meter current meter oscilloscope f requency counter probe (note 2)
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ec2525etts-70.656m high temperature infrared/convection ts max to tl (ramp-up rate) 3c/second maximum preheat - temperature minimum (ts min) 150c - temperature typical (ts typ) 175c - temperature maximum (ts max) 200c - time (ts min) 60 - 180 seconds ramp-up rate (tl to tp) 3c/second maximum time maintained above: - temperature (tl) 217c - time (tl) 60 - 150 seconds peak temperature (tp) 260c maximum for 10 seconds maximum target peak temperature (tp target) 250c +0/-5c time within 5c of actual peak (tp) 20 - 40 seconds ramp-down rate 6c/second maximum time 25c to peak temperature (t) 8 minutes maximum moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 5 of 6
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ec2525etts-70.656m low temperature infrared/convection 240c ts max to tl (ramp-up rate) 5c/second maximum preheat - temperature minimum (ts min) n/a - temperature typical (ts typ) 150c - temperature maximum (ts max) n/a - time (ts min) 60 - 120 seconds ramp-up rate (tl to tp) 5c/second maximum time maintained above: - temperature (tl) 150c - time (tl) 200 seconds maximum peak temperature (tp) 240c maximum target peak temperature (tp target) 240c maximum 1 time / 230c maximum 2 times time within 5c of actual peak (tp) 10 seconds maximum 2 times / 80 seconds maximum 1 time ramp-down rate 5c/second maximum time 25c to peak temperature (t) n/a moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. low temperature manual soldering 185c maximum for 10 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) high temperature manual soldering 260c maximum for 5 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) www.ecliptek.com | specification subject to change without notice | rev m 8/12/2010 | page 6 of 6


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