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1. anode 2. cathode 3. emitter 4. collector 12 43 pin connection (top view) description the ps2561b-1 is an optically coupl ed isolator containing a gaas li ght emitting diode and an npn silicon phototransistor. the ps2561b-1 is in a plastic dip (dual in-line pack age) and the ps2561bl-1 is lead bending type (gull-wing) for surface mount. the ps2561bl1-1 is lead bending ty pe for long creepage distance. the ps2561bl2-1 is lead bending type for long creepage distance (gull-wing) for surface mount. features ? operating ambi ent temperature: 110 c high isolation voltage (bv = 5 000 vr.m.s.) high collector to emitter voltage (v ceo = 80 v) high current transfer ratio (ctr = 200% typ.) high-speed switching (t r = 3 s typ., t f = 5 s typ.) ordering number of taping product: ps2561bl-1-e3, e4, f3, f4 : ps2561bl2-1-e3, e4 pb-free product safety standards ul approved: file no. e72422 csa approved: no. ca 101391 bsi approved: no. 7112/7420 semko approved: no. 408808 nemko approved: no. p04202822 demko approved: no. 312926 fimko approved: no. fi 21008 din en60747-5-2 (vde0884 part2) approved: no. 40008862 (option) applications power supply telephone/fax. fa/oa equipment programmable logic controller data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. photocoupler ps2561b-1,ps2561bl-1 ps2561bl1-1,ps2561bl2-1 dip photocoupler operating ambient temperature 110 c ? nepoc series ? document no. pn10505ej02v0ds (2nd edition) date published september 2005 cp(k) printed in japan the mark ? shows major revised points. ? nec compound semiconductor devices, ltd. 2004, 2005
package dimensions (unit : mm) dip type long creepage distance lead bending type long creepage distance (gull-wing) ps2561b-1 3.50.3 2.54 1.250.15 0.500.10 0.25 m 4.60.35 6.50.5 0 to 15? 7.62 0.25 +0.1 ?0.05 4.15 0.4 3.2 0.4 12 43 ps2561bl1-1 0 to 15? 0.25 +0.1 ?0.05 10.16 2.54 0.25 m 0.500.1 1.250.15 3.85 0.4 3.15 0.35 3.5 0.3 6.50.5 4.60.35 12 43 ps2561bl-1 0.25 m 4.60.35 6.50.5 3.50.3 2.54 1.250.15 0.15 0.90.25 9.600.4 0.25 +0.1 ?0.05 0.1 +0.1 ?0.05 12 43 ps2561bl2-1 0.25 m 0.15 2.54 1.250.15 3.50.3 6.50.5 4.60.35 12 43 11.8 +0.2 ?0.5 0.25 +0.1 ?0.05 0.250.2 0.90.25 10.16 data sheet pn10505ej02v0ds 2 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
marking example 2561b m 501 ps2561b-1 assembly lot week assembled year assembled (last 1 digit) in-house code ctr rank code no. 1 pin mark m 5 01 package new pkg made in japan solder plating specification pb-free j data sheet pn10505ej02v0ds 3 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps2561b-1 ps2561b-1-a pb-free magazine case 100 pcs standard products ps2561b-1 ps2561bl-1 ps2561bl-1-a (ul, csa, bsi, ps2561bl1-1 ps2561bl1-1-a nemko, demko, ps2561bl2-1 ps2561bl2-1-a semko, fimko ps2561bl-1-e3 ps2561bl-1-e3-a embo ssed tape 1 000 pcs/reel approved) ps2561bl-1-e4 ps2561bl-1-e4-a ps2561bl-1-f3 ps2561bl-1-f3-a embossed tape 2 000 pcs/reel ps2561bl-1-f4 ps2561bl-1-f4-a ps2561bl2-1-e3 ps2561bl2-1-e3-a embossed tape 1 000 pcs/reel ps2561bl2-1-e4 ps2561bl2-1-e4-a ps2561b-1-v ps2561b-1-v-a magazi ne case 100 pcs din en60747-5-2 ps2561bl-1-v ps2561bl-1-v-a (vde0884 part2) ps2561bl1-1-v ps2561bl1-1-v-a approved ps2561bl2-1-v ps2561bl2-1-v-a (option) ps2561bl-1-v-e3 ps2561bl-1-v-e3-a embossed tape 1 000 pcs/reel ps2561bl-1-v-e4 ps2561bl-1-v-e4-a ps2561bl-1-v-f3 ps2561bl-1-v-f3-a embossed tape 2 000 pcs/reel ps2561bl-1-v-f4 ps2561bl-1-v-f4-a ps2561bl2-1-v-e3 ps2561bl2-1-v-e3-a embossed tape 1 000 pcs/reel ps2561bl2-1-v-e4 ps2561bl2-1-v-e4-a *1 for the application of the safety st andard, following part number should be used. data sheet pn10505ej02v0ds 4 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode reverse voltage v r 6 v forward current (dc) i f 40 ma power dissipation derating ? p d / c 1.5 mw/ c power dissipation p d 150 mw peak forward current *1 i fp 1 a transistor collector to emitter voltage v ceo 80 v emitter to collector voltage v eco 7 v collector current i c 50 ma power dissipation derating ? p c / c 1.5 mw/ c power dissipation p c 150 mw isolation voltage *2 bv 5 000 vr.m.s. operating ambient temperature t a ?55 to +110 c storage temperature t stg ?55 to +150 c *1 pw = 100 s, duty cycle = 1% *2 ac voltage for 1 minute at ta = 25c, rh = 60% between input and output. pins 1-2 shorted together , 3-4 shorted together. data sheet pn10505ej02v0ds 5 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 10 ma 1.17 1.4 v reverse current i r v r = 5 v 5 a terminal capacitance c t v = 0 v, f = 1.0 mhz 50 pf transistor collector to emitter dark current i ceo v ce = 48 v, i f = 0 ma 100 na i f = 5 ma, v ce = 5 v 100 200 400 % coupled current transfer ratio (i c /i f ) *1 ctr i f = 1 ma, v ce = 5 v 50 100 collector saturation voltage v ce (sat) i f = 10 ma, i c = 2 ma 0.3 v isolation resistance r i-o v i-o = 1.0 kv dc 10 11 ? isolation capacitance c i-o v = 0 v, f = 1.0 mhz 0.5 pf rise time *2 t r v cc = 10 v, i c = 2 ma, r l = 100 ? 3 s fall time *2 t f 5 *1 ctr rank ctr rank ctr (%) conditions 100 to 200 i f = 5 ma, v ce = 5 v q 50 and larger i f = 1 ma, v ce = 5 v 130 to 260 i f = 5 ma, v ce = 5 v w 70 and larger i f = 1 ma, v ce = 5 v 100 to 300 i f = 5 ma, v ce = 5 v d 50 and larger i f = 1 ma, v ce = 5 v 200 to 400 i f = 5 ma, v ce = 5 v l 100 and larger i f = 1 ma, v ce = 5 v 100 to 400 i f = 5 ma, v ce = 5 v n 50 and larger i f = 1 ma, v ce = 5 v *2 test circuit for switching time v cc v out r l = 100 ? 50 ? i f pulse input pw = 100 s duty cycle = 1/10 data sheet pn10505ej02v0ds 6 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
typical characteristics (t a = 25 c, unless otherwise specified) diode power dissipation p d (mw) transistor power dissipation p c (mw) ambient temperature t a (?c) forward current i f (ma) forward voltage v f (v) collector current i c (ma) collector to emitter voltage v ce (v) collector to emitter dark current i ceo (na) collector saturation voltage v ce(sat) (v) ambient temperature t a (?c) ambient temperature t a (?c) diode power dissipation vs. ambient temperature transistor power dissipation vs. ambient temperature forward current vs. forward voltage collector current vs. collector to emitter voltage collector to emitter dark current vs. ambient temperature collector current vs. collector saturation voltage collector current i c (ma) 150 100 50 0 25 50 75 100 110 125 150 1.5 mw/?c 150 100 50 25 50 75 100 110 125 150 0 10 000 100 110 1 000 100 10 1 75 50 25 0 ?25 ?50 v ce = 48 v 10 1.0 0.8 0.6 0.4 0.2 0 5 1 0.5 0.1 10 ma 40 1.5 mw/?c 20 ma 2 ma i f = 1 ma 5 ma 70 2 60 50 40 30 20 10 0 4 6 810 20 ma i f = 5 ma 10 ma 24 v 10 v 5 v 100 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 50 10 5 1 0.5 0.1 0?c ?25?c ?55?c +60?c +25?c t a = +100?c remark the graphs indicate nominal characteristics. data sheet pn10505ej02v0ds 7 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
forward current i f (ma) ambient temperature t a (?c) load resistance r l ( ? ) normalized current transfer ratio ctr load resistance r l ( ? ) switching time t ( s) normalized current transfer ratio vs. ambient temperature current transfer ratio vs. forward current switching time vs. load resistance switching time vs. load resistance i c , i ceo vs. ambient temperature 1.2 ?50 1.0 0.8 0.6 0.4 0.2 0 ?25 0 25 50 75 100 110 450 400 350 300 250 200 150 100 50 0 0.05 0.1 0.5 1 5 10 50 50 10 1 0.1 10 k 5 k 1 k 500 100 50 10 1 000 100 10 1 100 k 50 k 10 k 5 k 1 k 500 100 i c = 2 ma, v cc = 10 v, ctr = 290% t f t r t d t s i f = 5 ma, v cc = 5 v, ctr = 290% t s t d t r t f ambient temperature t a (?c) collector current i c , collector to emitter dark current i ceo ( a) frequency f (khz) normalized gain g v frequency response 0 ?5 ?10 ?15 ?20 0.5 1 2 5 10 20 50 100 200 500 i f = 5 ma, v ce = 5 v 100 ? 300 ? r l = 1 k ? v ce = 5 v sample a b c normalized to 1.0 at t a = 25?c, i f = 5 ma, v ce = 5 v 10 000 1 000 100 10 1 0.1 0.01 0.001 0 25 50 75 100 110 v ce = 48 v = 24 v i c (v ce = 5 v, i f = 1 ma) ctr = 200% remark the graphs indicate nominal characteristics. data sheet pn10505ej02v0ds 8 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
long term ctr degradation time (hr) i f = 5 ma t a = 25?c i f = 5 ma t a = 60?c 1.2 1.0 0.8 0.6 0.4 0.2 0 10 2 10 3 10 4 10 5 typ. ctr (relatiive value) remark the graph indicates nominal characteristics. data sheet pn10505ej02v0ds 9 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
taping specifications (unit : mm) tape direction outline and dimensions (tape) outline and dimensions (reel) ps2561bl-1-e3 ps2561bl-1-e4 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.0 0.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 ?0 packing: 1 000 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 2542.0 80.01.0 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0 data sheet pn10505ej02v0ds 10 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
tape direction ps2561bl-1-f3 ps2561bl-1-f4 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.750.1 4.5 max. 4.0 0.1 0.4 5.30.1 8.00.1 7.50.1 16.00.3 10.30.1 1.5 +0.1 ?0 outline and dimensions (reel) packing: 2 000 pcs/reel 2.00.5 r 1.0 13.00.2 21.00.8 3302.0 1001.0 2.00.5 15.9 to 19.4 outer edge of flange 21.51.0 17.51.0 data sheet pn10505ej02v0ds 11 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
tape direction ps2561bl2-e3 ps2561bl2-e4 outline and dimensions (tape) 2.050.1 2.00.1 4.00.1 1.550.1 1.750.1 4.40.2 12.350.15 0.38 11.50.1 24.00.3 6.60.2 12.00.1 outline and dimensions (reel) packing: 1 000 pcs/reel 2.00.5 r 1.0 13.00.2 f 21.00.8 f 3302.0 f 1001.0 f 2.00.5 29.51.0 25.51.0 23.9 to 27.4 outer edge of flange data sheet pn10505ej02v0ds 12 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
notes on handling 1. recommended soldering conditions (1) infrared reflow soldering peak reflow temperature 260 c or below (package surface temperature) time of peak reflow temperature 10 seconds or less time of temperature higher than 220 c 60 seconds or less time to preheat temperature from 120 to 180 c 120 30 s number of reflows three flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) 12030 s (preheating) 220?c 180?c package surface temperature t (?c) time (s) recommended temperature profile of infrared reflow (heating) to 10 s to 60 s 260?c max. 120?c (2) wave soldering temperature 260 c or below (molten solder temperature) time 10 seconds or less preheating conditions 120 c or below (package surface temperature) number of times one (allowed to be dipped in solder including plastic mold portion.) flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (3) soldering by soldering iron peak temperature (l ead part temperature) 350 c or below time (each pins) 3 seconds or less flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% is recommended.) (a) soldering of leads should be made at the poi nt 1.5 to 2.0 mm from the root of the lead. (b) please be sure that the temperatur e of the package woul d not be heated over 100 c. data sheet pn10505ej02v0ds 13 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
(4) cautions fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. cautions regarding noise be aware that when voltage is applied suddenly bet ween the photocoupler?s i nput and output or between corrector-emitters at startup, the out put side may enter the on state, even if the volt age is within the absolute maximum ratings. usage cautions 1. protect against static electricity when handling. 2. avoid storage at a high te mperature and high humidity. data sheet pn10505ej02v0ds 14 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
when the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the au thority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license . m8e 00. 4 - 0110 the information in this document is current as of september, 2005. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ? data sheet pn10505ej02v0ds 15 ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1
caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. follow related laws and ordinanc es when disposing of the produc t. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (wit h a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industria l waste and household garbage, and ensure that the product is controlled (as industria l waste subject to special c ontrol) up until final disposal. do not burn, destroy, cut, crush, or chemically di ssolve the product. do not lick the product or in any way allow it to enter the mouth. nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-0 fax: +49-211-6503-1327 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0504 nec compound semiconductor devices, ltd. http://www.ncsd.necel.com/ e-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1573 fax: +81-44-435-1579 for further information, please contact ps2561b-1,ps2561bl-1,ps2561bl1-1,ps2561bl2-1

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