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september 2011 doc id 17893 rev 3 1/18 18 stb155n3lh6 STD155N3LH6 n-channel 30 v, 2.4 m ? , 80 a, d2pak, dpak stripfet?vi deepgate? power mosfet features 100% avalanche tested logic level drive applications switching applications automotive description these devices are n-channel power mosfets developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfets exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order codes v dss r ds(on) max i d (1) 1. current limited by package p tot stb155n3lh6 30 v 3.0 m ? 80 a 110 w STD155N3LH6 dpak d2pak 1 3 tab tab 3 1 ! - v $ 4 ! " o r ' 3 table 1. device summary order codes marking package packaging stb155n3lh6 155n3lh6 d 2 pa k tape and reel STD155N3LH6 dpak www.st.com
contents stb155n3lh6, STD155N3LH6 2/18 doc id 17893 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 stb155n3lh6, std155n3 lh6 electrical ratings doc id 17893 rev 3 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding. drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w t stg storage temperature -55 to 175 c t j operating junction temperature c table 3. thermal resistance symbol parameter value unit d 2 pak dpak r thj-case thermal resistance junction-case max 1.36 c/w r thj-pcb (1) 1. when mounted on 1 inch 2 oz cu board. thermal resistance junction-pcb max 35 50 c/w table 4. thermal resistance symbol parameter value unit i av not-repetitive avalanche current 40 a e as (1) 1. starting tj = 25c, i d = 40 a, v dd = 25 v single pulse avalanche energy 525 mj electrical characteristics stb155n3lh6, STD155N3LH6 4/18 doc id 17893 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.5v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 2.4 3.0 m ? v gs = 5 v, i d = 40 a 3.2 4.0 m ? table 6. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 3800 725 420 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 80 a v gs = 10 v (see figure 14) - 80 15 15 - nc nc nc r g gate input resistance f = 1 mhz gate bias bias = 0 test signal level = 20 mv open drain -1.5- ? stb155n3lh6, STD155N3LH6 electrical characteristics doc id 17893 rev 3 5/18 table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 10 v (see figure 15) - 15 85 - ns ns t d(off) t f turn-off delay time fall time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 10 v (see figure 15) - 100 40 - ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 -1.3v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 24 v (see figure 17) - 35 26.5 1.7 ns nc a electrical characteristics stb155n3lh6, STD155N3LH6 6/18 doc id 17893 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am09101v1 i d 150 100 50 0 0 1.0 v d s (v) (a) 0.5 1.5 200 250 5v 4v 3 v v g s =10v 3 00 am09102v1 i d 150 100 50 0 0 2 v g s (v) 4 (a) 1 3 200 v d s =1v am0910 3 v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 i d =1ma 1.10 am09104v1 r d s (on) 1.5 1.0 0.5 0 0 40 i d (a) (m ? ) 20 60 2.0 2.5 3 .0 3 .5 v g s =10v 8 0 am09105v1 stb155n3lh6, STD155N3LH6 electrical characteristics doc id 17893 rev 3 7/18 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =15v i d = 8 0a 12 am09106v1 c 1000 100 0 10 v d s (v) (pf) 5 15 ci ss co ss cr ss 20 25 am09107v1 v g s (th) 0.6 0.4 0.2 0 -75 t j (c) (norm) -25 0. 8 75 25 125 1.0 1.2 am0910 8 v1 r d s (on) 1.0 0. 8 0.6 0.4 -75 t j (c) (norm) -25 75 25 125 1.6 1.4 1.2 2.0 1. 8 v g s =10v i d =40a am09109v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c 8 0 60 70 am09110v1 test circuits stb155n3lh6, STD155N3LH6 8/18 doc id 17893 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s stb155n3lh6, STD155N3LH6 package mechanical data doc id 17893 rev 3 9/18 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. package mechanical data stb155n3lh6, STD155N3LH6 10/18 doc id 17893 rev 3 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8 stb155n3lh6, STD155N3LH6 package mechanical data doc id 17893 rev 3 11/18 figure 19. d2pak (to-263) drawing figure 20. d2pak footprint (a) a. all dimension ar e in millimeters 0079457_ s 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint package mechanical data stb155n3lh6, STD155N3LH6 12/18 doc id 17893 rev 3 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8 stb155n3lh6, STD155N3LH6 package mechanical data doc id 17893 rev 3 13/18 figure 21. dpak (to-252) drawing figure 22. dpak footprint (b) b. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1 packaging mechanical data stb155n3lh6, STD155N3LH6 14/18 doc id 17893 rev 3 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 stb155n3lh6, STD155N3LH6 packaging mechanical data doc id 17893 rev 3 15/18 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 table 12. dpak (to-252) tape and reel mechanical data (continued) tape reel dim. mm dim. mm min. max. min. max. packaging mechanical data stb155n3lh6, STD155N3LH6 16/18 doc id 17893 rev 3 figure 23. tape for d2pak (to-263) and dpak (to-252) figure 24. reel for d2pak (to-263) and dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2 stb155n3lh6, STD155N3LH6 revision history doc id 17893 rev 3 17/18 6 revision history table 13. document revision history date revision changes 02-sep-2010 1 first release. 12-apr-2011 2 document stat us promoted from preliminary data to datasheet. 27-sep-2011 3 updated table 1: device summary , figure 2: safe operating area and section 4: package mechanical data . minor text changes. stb155n3lh6, STD155N3LH6 18/18 doc id 17893 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com |
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