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nesg250134 nec's npn sige rf transistor for medium output power amplification (800 mw) 3-pin power minimold (34 package) california eastern laboratories ? this product is suitable for medium output power (800 m w) amplification p o = 29 dbm typ. @ v ce = 3.6 v, p in = 15 dbm, f = 460 mhz p o = 29 dbm typ. @ v ce = 3.6 v, p in = 20 dbm, f = 900 mhz ? maximum stable gain: msg = 23 db typ @ v ce = 3.6 v, i c = 100 ma, f = 460 mhz ? sige technology: uhs2-hv process ? absolute maximum ratings: v cbo = 20 v ? 3-pin power minimold (34 package) features ordering information remark to order evaluation samples, contact your nearby sales of?ce. unit sample quantity is 25 pcs. absolute maximum ratings (t a =+25oc) note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb part number order number package quantity supplying form nesg250134 nesg250134-az 3-pin power minimold (pb-free) note1 25 pcs (non reel) ? 12 mm wide embossed taping ? pin 2 (emitter) face the perforation side of the tape nesg250134-t1 nesg250134-t1-az 1 kpcs/reel parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 9.2 v emitter to base voltage v ebo 2.8 v collector current i c 500 ma total power dissipation p tot note 1.5 w junction temperature t j 150 c storage temperature t stg ? 65 to +150 c caution observe precautions when handling because these devices are sensitive to electrostatic discharge. note 1. contains lead in the part except the electrode terminals.
nesg250134 nesg250134 thermal resistance (t a = 25c) parameter symbol ratings unit thermal resistance from junction to ambient note rth j-a 80 c/w note mounted on 34.2 cm 2 0.8 mm (t) glass epoxy pwb recommended operating range (t a = 25c) parameter symbol min. typ. max. unit collector to emitter voltage v ce ? 3.6 4.5 v collector current i c ? 400 500 ma input power note p in ? 12 17 dbm note input power under conditions of v ce 4.5 v, f = 460 mhz
notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. msg = s 21 s 12 h fe classification nesg250134 nesg250134 electrical charachteristics (t a = 25c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 1 a emitter cut-off current i ebo v eb = 0.5 v, i c = 0 ma ? ? 1 a dc current gain h fe note 1 v ce = 3 v, i c = 100 ma 80 120 180 ? rf characteristics gain bandwidth product f t v ce = 3.6 v, i c = 100 ma, f = 460 mhz ? 10 ? ghz insertion power gain | s 21e | 2 v ce = 3.6 v, i c = 100 ma, f = 460 mhz ? 19 ? db maximum stable gain msg note 2 v ce = 3.6 v, i c = 100 ma, f = 460 mhz ? 23 ? db linear gain (1) g l v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 0 dbm 16 19 ? db linear gain (2) g l v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 0 dbm ? 16 ? db output power (1) po v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 15 dbm 27 29 ? dbm output power (2) po v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 29 ? dbm collector ef?ciency (1) c v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 460 mhz, p in = 15 dbm ? 60 ? % collector ef?ciency (2) c v ce = 3.6 v, i c (set) = 30 ma (rf off), f = 900 mhz, p in = 20 dbm ? 60 ? % rank fb marking sn h fe value 80 to 180
nesg250134 nesg250134 typical charachteristics (t a = +25c, unless otherwise speci?ed ) 1.6 1.2 1.0 0.6 0.2 0 2 4 6 8 1 0 f = 1 mhz 1.4 0.8 0.4 v ce = 3 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 1,000 v ce = 4 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 1,000 200 500 300 100 0 2 1 3 5 i b = 1 ma 4 ma 6 ma 2 ma 10 ma 3 ma 5 ma 8 ma 9 ma 7 ma 400 4 reverse t ransfer capacitance c re (pf) collector to base v oltage v cb (v) reverse transfer cap acit ance vs. collect or to base vol ta ge collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lt age collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vol t age collector current i c (ma) collector to emitter v oltage v ce (v) collect or current vs. collect or to emitter vo lt age to tal power dissipation p to t (mw) ambient t emperature t a (oc) total power dissipat io n vs. ambient tempera ture 2.0 1.6 1.5 1.2 0.8 0.4 0 25 50 75 100 125 150 nature neglect mounted on glass epoxy pwb (34.2 cm 2 0.8 mm (t) ) remark the graphs indicate nominal characteristics.
nesg250134 nesg250134 1,000 100 10 100 10 1,000 v ce = 3 v 1,000 100 10 100 10 1,000 v ce = 4 v 20 16 12 8 4 0 10 100 1,000 v ce = 3 v f = 460 mhz 20 16 12 8 4 0 10 100 1,000 v ce = 3.6 v f = 460 mhz 20 16 12 8 4 0 10 100 1,000 v ce = 4 v f = 460 mhz v ce = 3 v i c = 100 ma 40 30 25 20 15 10 5 0 0.1 1 1 0 mag msg |s 21e | 2 35 dc current gain h fe collector current i c (ma) dc current gain vs. collector current dc current gain h fe collector current i c (ma) dc current gain vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics.
nesg250134 nesg250134 v ce = 3 v f = 460 mhz 30 25 15 10 0 10 100 1,000 mag msg |s 21e | 2 20 5 v ce = 3 v f = 900 mhz 25 20 10 5 -5 10 100 1,000 |s 21e | 2 15 0 v ce = 3.6 v f = 460 mhz 30 25 15 10 0 10 100 1,000 |s 21e | 2 20 5 v ce = 3.6 v f = 900 mhz 25 20 10 5 -5 10 100 1,000 |s 21e | 2 15 0 mag msg v ce = 3.6 v i c = 100 ma 40 30 25 20 15 10 5 0 0.1 1 1 0 mag msg |s 21e | 2 35 40 30 25 20 15 10 5 0 0.1 1 1 0 |s 21e | 2 v ce = 4 v i c = 100 ma 35 mag msg mag msg mag msg frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics.
nesg250134 nesg250134 v ce = 4 v f = 460 mhz 30 25 15 10 0 10 100 1,000 |s 21e | 2 20 5 v ce = 4 v f = 900 mhz 25 20 10 5 -5 10 100 1,000 |s 21e | 2 15 0 mag msg mag msg 5 4 3 2 1 0 25 10 5 20 15 0 10 100 1,000 v ce = 3.6 v f = 460 mhz g a nf collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) insertion power gain, mag, ms g vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3.6 v, f = 460 mhz i c (set) = 30 ma g p p out i c c 30 25 20 15 10 5 0 600 100 200 300 500 400 0 -10 5 0 -5 10 15 20 v ce = 3.6 v, f = 900 mhz i c (set) = 30 ma g p p out i c c 30 25 20 15 10 5 0 600 100 200 300 500 400 0 -10 5 0 -5 10 15 20 input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) remark the graphs indicate nominal characteristics.
nesg250134 pa evaluation board (f = 460 mhz) gnd v b v c gnd sn sn c1 c2 c3 c4 c5 c6 l1 l2 c8 c7 c9 r1 c10 rf in rf out notes 1. 38 90 mm, t = 0. 8 mm double sided copper clad glass epoxy pwb . 2. back side: gnd pattern 3. solder gold plated on pattern 4. : through holes pa evaluation circuit (f = 460 mhz) rf in c1 c2 c3 c4 c5 v be c9 l1 rf out c6 c7 c8 v ce l2 r1 c10 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
nesg250134 value maker c1 30 pf murata c2 6 pf murata c3, c4 7 pf murata c5 3 pf murata c6 0.5 pf murata c7 5 pf murata c8 10 pf murata c9, c10 100 nf murata l1 100 nh toko l2 3 nh toko r1 30 ssm component list pa evaluation circuit typical characteristics remark the graphs indicate nominal characteristics. v ce = 3.6 v, f = 460 mhz i c (set) = 40 ma g p p out i c c 30 25 20 15 10 5 0 600 100 200 300 500 400 0 -10 5 0 -5 10 15 20 input power p in (dbm) output power, power gain, collect or current , collect or efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector ef ficiency c (%)
nesg250134 distortion evaluation board (f = 460 mhz) gnd v b v c gnd sn sn c1 c2 c4 c5 c6 l1 l2 c9 c8 c10 r1 c12 rf in rf out c3 c7 c1 1 notes 1. 38 90 mm , t = 0.8 mm, double sided copper clad glass epoxy pwb . 2. back side: gnd pattern 3. solder gold plated on pattern 4. : through holes distortion evaluation circuit (f = 460 mhz) rf in c1 c2 c3 c4 c5 v be c10 l1 rf out c6 c8 c9 v ce l2 r1 c12 c7 c1 1 the application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
nesg250134 component list distortion evaluation circuit typical characteristics remark the graphs indicate nominal characteristics. value maker c1 47 pf murata c2 12 pf murata c3, c4 7 pf murata c5 3 pf murata c6 6 pf murata c7 0.5 pf murata c8 5 pf murata c9 51 pf murata c10, c12 100 nf murata c11 1 f murata l1 100 nh toko l2 15 nh toko r1 30 ssm 80 60 40 20 0 70 50 30 10 -5 0 5 10 15 20 25 3rd order intermodulation distortion im 3 (dbc) 1 tone output power p out (dbm) 3rd order intermodula tion dist or tion vs. 1 t one output power v ce = 3.6 v, f = 460 mhz, i c (set ) = 30 ma, of fset = 1 mhz
nesg250134 3-pin power minimold (34 package) (unit:mm) pin connections 1. collector 2. emitter 3. base 1.50.1 0.41 +0.03 -0.0 6 4.50.1 0.420.06 0.420.06 1.60.2 3.0 1.5 2 1 3 2.50.1 4.00.25 0.8 min. 0.470.06 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 03/07/2005

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