radar pulsed power transistor 6w, 1.2-1.4 ghz, 6ms pulse, 25% duty m/a-com products released, 30 may 07 MAPRST1214-6UF ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? npn silicon microwav e power transistors ? common base configuration ? broadband class c operation ? high efficiency inter-digitized geometry ? diffused emitter ballasting resistors ? gold metallization system ? internal input and output impedance matching ? hermetic metal/ceramic package ? rohs compliant outline drawing electrical specifications: t c = 25 5c ( room ambient ) parameter test conditions frequency symbol min max units collector-emitter breakdown voltage i c = 10ma bv ces 65 - v collector-emitter leakage current v ce = 40v i ces - 3.0 ma thermal resistance vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz r th(jc) - 1.8 c/w output power vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz p out 6 - w power gain vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz g p 8.75 - db collector efficiency vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz c 40 - % input return loss vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz rl - -10 db pulse droop vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz droop - 0.3 db load mismatch tolerance vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz vswr-t - 3:1 - load mismatch stability vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz vswr-s - 1.5:1 - gain flatness vcc = 36v, pin = 0.8w f = 1.2, 1.3, 1.4 ghz g - 0.75 db absolute maximum ratings at 25c parameter symbol rating units collector-emitter voltage v ces 65 v emitter-base voltage v ebo 3.0 v collector current (peak) i c 1.9 a power dissipation @ +25c p tot 100 w storage temperature t stg -65 to +200 c junction temperature t j 200 c
radar pulsed power transistor 6w, 1.2-1.4 ghz, 6ms pulse, 25% duty m/a-com products released, 30 may 07 MAPRST1214-6UF ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance freq. (ghz) pin (w) pout (w) gain (db) ic (a) eff (%) rl (db) vswr-s (1.5:1) vswr-t (3:1) 1.2 0.8 7.3 9.59 0.44 45.7 -14.1 s p 1.3 0.8 7.2 9.56 0.43 46.6 -15.2 s p 1.4 0.8 6.7 9.26 0.42 44.8 -16.1 s p droop (db) 0.10 0.09 0.08 gain vs. frequency collector efficiency vs. frequency f (ghz) z if ( ? ) z of ( ? ) 1.2 3.7 ? j 3.2 16.9 + j18.0 1.3 3.8 ? j 3.4 14.2 + j16.4 1.4 3.4 ? j 3.7 11.7 + j18.2 rf test fixture impedance 8.0 8.5 9.0 9.5 10.0 1.20 1.25 1.30 1.35 1.40 fr e q (ghz ) gain (db) 35 40 45 50 55 1.20 1.25 1.30 1.35 1.40 fr e q (ghz ) efficiency (%)
radar pulsed power transistor 6w, 1.2-1.4 ghz, 6ms pulse, 25% duty m/a-com products released, 30 may 07 MAPRST1214-6UF ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additi onal data sheets and pr oduct information. m/a-com inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a-com is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com has under develop- ment. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
|
