copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 0.48 ? )@v gs =10v gate charge ( typ 32 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 500 v i d continuous drain current (@t c =25 o c) 13.0 a continuous drain current (@t c =100 o c) 7.13 a i dm drain current pulsed (note 1) 52 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 240 mj e ar repetitive avalanche energy (note 1) 8.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 35 w derating factor above 25 o c 0.25 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 4.17 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c /w mar. 2011. rev. 2.0 1/7 bv dss : 500v i d : 13a r ds(on) : 0.48ohm 1 2 3 sw13n50 samwin 1 2 3 1. gate 2. drain 3. source to - 220f item sales type marking package packaging 1 sw f 13n50 sw13n50 to - 220f tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 500 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.62 - v/ o c i dss drain to source leakage current v ds =400v, v gs =0v - - 1 ua v ds =320v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.25a 0.4 0.48 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 1600 - pf c oss output capacitance - 200 - c rss reverse transfer capacitance - 45 - t d(on) turn on delay time v ds =200v, i d =6.5a, r g =25? - 18 - ns tr rising time - 23 - t d(off) turn off delay time - 61 - t f fall time - 24 - q g total gate charge v ds =320v, v gs =10v, i d =6.5a - 47 - nc q gs gate - source charge - 9 - q gd gate - drain charge - 28 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 13.0 a i sm pulsed source current - - 52 a v sd diode forward voltage drop. i s =6.5a, v gs =0v - - 1.6 v t rr reverse recovery time i s =6.5a, v gs =0v, di f /dt=100a/us - 425 - ns q rr breakdown voltage temperature - 3.8 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 19.4mh, i as = 6.5a, v dd = 50v, r g =50?, starting t j = 25 o c 3. i sd 6.5a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/7 sw13n50 samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 sw13n50 samwin 10 0 10 1 10 0 10 1 *. notes : 1. 250us pulse test 2. t c = 25 o c v ds , drain-source voltage [v] i d , drain current [a] top : 15v 10v 9v 8v 6v bottom : 5.5v 2 3 4 5 6 7 8 9 10 10 -1 10 0 10 1 v gs , gate-source voltage [v] i d , drain current [a] 150 o c 25 o c -55 o c *. notes : 1. v ds = 50v 2. 250us pulse test 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 *. note : t j = 25 o c i d , drain current [a] r ds(on) , drain-source on-resistance [] v gs = 20v v gs = 10v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 v sd , source-drain voltage [v] i dr , reverse drain current [a] *. notes : 1. v gs = 0v 2. 250us pulse test 150 o c 25 o c 0 5 10 15 20 25 30 35 40 45 50 0 500 1000 1500 2000 2500 3000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd *. notes : 1. v gs = 0v 2. f=1mhz c iss c oss c rss capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 0 2 4 6 8 10 12 v gs , gate-source voltage [v] v ds = 250v v ds = 400v *. note : i d = 8.5 a q g , total gate charge [nc]
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve 4/7 fig 7. breakdown voltage variation vs. junction temperature samwin sw13n50 -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] *. notes : 1. v gs = 10 v 2. i d = 4.4 a 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 ? s operation in this area is limited by r ds(on) ? ? n o t e s : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ? ? n o t e s : 1. z jc ( t ) = 1 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 t c' case temperature [ o c] i d' drain current [a]
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 samwin sw13n50
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd samwin sw13n50 6/7
copyright@ semipower electronic technology co., ltd. all rights reserved. 7/7 sw13n50 samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn
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