page : 1 rev. 0.09a : 2011.09.14 rev. 0.09a 2011.09.14 r1qaa36**cb* / r1qda36**cb* series description the r1q # a3636 is a 1,048,576-word by 36-bit and the r1q # a3618 is a 2,097,152-word by 18-bit synchronous quad data rate static ram fabricated with advanced cmos tech nology using full cmos six-transistor memory cell. it integrates unique sy nchronous peripheral circuitry and a burst counter. all input registers are controlled by an input clock pair (k and /k) and are latched on the positive edge of k and /k. these products are suitable for applications which require sync hronous operation, high speed, lo w voltage, high density and wide bit configuration. these products are pack aged in 165-pin plastic fbga package. # = a: read latency =2.5, w/o odt # = g: read latency =2.0, w/o odt # = d: read latency =2.5, w/ odt # = k: read latency =2.0, w/ odt hint=00000.0000.0000.0000.0000 -- - 00000.1100 . 1100 . 0000 . 0000--- 00000.0000.0000.0000.0000---qdrii+_rl25 features ? power supply ? 1.8 v for core (v dd ), 1.4 v to v dd for i/o (v ddq ) ? clock ? fast clock cycle time for high bandwidth ? two input clocks (k and /k) for precise ddr timing at clock rising edges only ? two output echo clocks (cq and /cq) simplify data capture in high-speed systems ? clock-stop capability with p s restart ? i/o ? separate independent read and write data ports with concurrent transactions ? 100% bus utilization ddr read and write operation ? hstl i/o ? user programmable output impedance ? dll/pll circuitry for wide output data valid wi ndow and future frequency scaling ? data valid pin (qvld) to indicate valid data on the output ? function ? four-tick burst for reduced address frequency ? internally self-timed write control ? simple control logic for easy depth expansion ? jtag 1149.1 compatible test access port ? package ? 165 fbga package (15 x 17 x 1.4 mm) 36-mbit qdr?ii+ sram 4-word burst r1qaa3636cbg / r1qaa3618cbg / r1qaa3609cbg r1qda3636cbg / r1qda3618cbg / r1qda3609cbg r1qga3636cbg / r1qga3618cbg / r1qga3609cbg r1qka3636cbg / R1QKA3618CBg / r1qka3609cbg notes: 1. qdr rams and quad data rate rams comprise a new fam ily of products devel oped by cypress semiconductor, idt, samsung, and renesas electronics corp. (qdr co-development team) 2. the specifications of this device are subject to ch ange without notice. please contact your nearest renesas electronics sales office regarding specifications. 3. refer to " http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp " for the latest and detailed information. 4. descriptions about x9 parts in this datasheet are just for reference. r10ds0158ej0009 r10ds0158ej0009
page : 2 rev. 0.09a : 2011.09.14 r1qaa36**cb* / r1qda36**cb* series part number definition common 0 q % q o o g p v u 0 q % q o o g p v u 0 q % q o o g p v u 4 4 g p g u c u / g o q t [ 2 t g h k z # 8 f f 8 ( t g s w g p e [ / * \ 3 3 & |