document number: 68830 www.vishay.com s09-1033-rev. a, 08-jun-09 1 automotive n-channel 40 v (d-s) 175 c mosfet sqm110n04-04 vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ? compliant to rohs directive 2002/95/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 40 r ds(on) ( ) at v gs = 10 v 0.0035 r ds(on) ( ) at v gs = 4.5 v - i d (a) 120 configuration single d g s n -channel mosfet to-263 s d g top v ie w ordering information package to-263 lead (pb)-free and halogen-free sqm110n04-04-ge3 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 120 a t c = 125 c 107 continuous source current (diode conduction) a i s 120 pulsed drain current b i dm 350 single pulse avalanche energy l = 0.1 mh e as 180 mj single pulse avalanche current i as 60 a maximum power dissipation b t c = 25 c p d 250 w t a = 25 c 3.75 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.6
www.vishay.com document number: 68830 2 s09-1033-rev. a, 08-jun-09 sqm110n04-04 vishay siliconix notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t c = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 - 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 40 v - - 1.0 a v gs = 0 v v ds = 40 v, t j = 125 c - - 50 v gs = 0 v v ds = 40 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 10 v v ds 5 v 110 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 30 a - 0.0028 0.0035 v gs = 10 v i d = 30 a, t j = 125 c - - 0.0055 v gs = 10 v i d = 30 a, t j = 175 c - - 0.0060 v gs = 4.5 v i d = 20 a - - - forward transconductance a g fs v ds = 15 v, i d = 30 a 30 - - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 6800 - pf output capacitance c oss - 1110 - reverse transfer capacitance c rss - 690 - total gate charge c q g v gs = 10 v v ds = 30 v, i d = 110 a - 140 - nc gate-source charge c q gs -35- gate-drain charge c q gd -55- turn-on delay time c t d(on) v dd = 30 v, r l = 0.47 i d ? 110 a, v gen = 10 v, r g = 2.5 -20- ns rise time c t r - 115 - turn-off delay time c t d(off) -75- fall time c t f -85- source-drain diode ratings and characteristics t c = 25 c b pulsed current a i sm - - 350 a forward voltage v sd i f = 110 a, v gs = 0 v - 1.1 1.4 v
document number: 68830 www.vishay.com s09-1033-rev. a, 08-jun-09 3 sqm110n04-04 vishay siliconix typical characteristics t a = 25 c, unless otherwise noted output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 50 100 150 200 250 0246810 v ds - drain-to-source voltage (v) 5 v v gs = 10 v thru 7 v - drain current (a) i d 6 v 4 v 0 50 100 150 200 250 0 153045607590 - transconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) 0 2000 4000 6000 8000 10 000 0 8 16 24 32 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss 0 50 100 150 200 250 01234567 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.001 0.002 0.003 0.004 0.005 0 20 40 60 80 100 120 i d - drain current (a) v gs = 10 v - on-resistance ( ) r ds(on) 0 4 8 12 16 20 0 50 100 150 200 250 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 30 v i d = 85 a
www.vishay.com document number: 68830 4 s09-1033-rev. a, 08-jun-09 sqm110n04-04 vishay siliconix typical characteristics t a = 25 c, unless otherwise noted on-resistance vs. junction temperature source drain diode forward voltage drain source breakdownvs. junction temperature thermal ratings t a = 25 c, unless otherwise noted maximum drain current vs. ambient temperature avalanche current vs. time 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) v gs = 10 v i d = 30 a r ds(on) - on-resistance (normalized) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 40 44 48 52 56 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v ds i d = 1 ma 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - ambient temper ature (c) - drain current (a) i d t in (s) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) at t a = 150 c 100 1 0.0001 i av (a) at t a = 25 c
document number: 68830 www.vishay.com s09-1033-rev. a, 08-jun-09 5 sqm110n04-04 vishay siliconix thermal ratings t a = 25 c, unless otherwise noted safe operating area normalized thermal transient impedance, junction-to-case note the characteristics shown in the graph. normalized transient thermal impedanc e junction to case (25 c) is given for gener al guidelines only to enable the user to get a ?ball park? indication of part capabilities. the data are extracted from si ngle pulse transient thermal imp edance characterist ics which are developed from empirical measurements. the latter is valid for the part mount ed on printed circuit board - fr4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part capabilities can widely vary depending on actual applicati on parameters and operating con ditions. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68830 . 1000 10 0.1 1 10 100 limited by r ds(on) * 0.1 100 t c = 25 c single pulse - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1 v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized eff ective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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