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  semitop ? 4 igbt module sk50gd12t4t target data features   
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typical applications remarks  1 +" " 1  2  % % gd-t absolute maximum ratings   2 #3 4+"  
  & symbol conditions values units igbt 1 +  5 2 #3 4+ !#77 1  +  5 2 !83 4+   2 #3 4+ 83 ,   2 87 4+ 97 ,  +:  +: 2 $ '  + !37 , 1 ) ; #7 1   1 ++ 2 <77 1= 1 ) > !3 1= 1 + ? !#77 1  5 2 !37 4+ !7 @ inverse diode    5 2 !83 4+   2 #3 4+ 97 ,   2 87 4+ (3 ,  :  : 2 $ '   !37 ,     2 !7 = &  %  5 2 !37 4+ #93 , module  a:b ,  %5 c(7 ddd e!83 4+   c(7 ddd e!#3 4+ 1   ,+" ! d #377 1 characteristics   2 #3 4+"  
  & symbol conditions min. typ. max. units igbt 1 )ab 1 ) 2 1 + "  + 2 !"8 , 3 3"< 9"3 1  + 1 ) 2 7 1" 1 + 2 1 +  5 2 #3 4+ 7"7! ,  5 2 !#3 4+ ,  ) 1 + 2 7 1" 1 ) 2 #7 1  5 2 #3 4+ 977 ,  5 2 !#3 4+ , 1 +7  5 2 #3 4+ !"! !"$ 1  5 2 !37 4+ ! !"# 1
+ 1 ) 2 !3 1  5 2 #34+ !3 f  5 2 !374+ #3 f 1 +ab  + 2 37 ," 1 ) 2 !3 1  5 2 #34+ %d !"<3 #"73 1  5 2 !374+ %d #"#3 #"(3 1 +  #"88  +  1 + 2 #3" 1 ) 2 7 1 & 2 ! gh 7"#  +
 7"!9  i ) 1 ) 2c81ddde!31 $83 + : )  5 2 #3 4+ ( j  a b 9$  
: )  2 $# f 1 ++ 2 9771 93    k 2 l#7 ,k@  + 2 37, <"$ m  a &&b : ) && 2 $# f  5 2 !37 4+ 3#!   & k 2 l#7 ,k@ 1 ) 2 ;!3 1 <7   && 3 m : a5cb 
)* 7"93 nk. sk50gd12t4t 1 27-04-2009 dil ? by semikron
semitop ? 4 igbt module sk50gd12t4t target data features   
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typical applications remarks  1 +" " 1  2  % % gd-t characteristics symbol conditions min. typ. max. units inverse diode 1  2 1 +   2 37 ,= 1 ) 2 7 1  5 2 #3 4+ %d #"# #"33 1  5 2 !37 4+ %d #"!< #"3 1 1 7  5 2 #3 4+ !"$ !"3 1  5 2 !37 4+ 7"l !"! 1
  5 2 #3 4+ !l #! f  5 2 !37 4+ #9 #< f  ::   2 37 ,  5 2 !37 4+ $7 , i

k 2 l#7 ,k@ 8"# @+ 

1 ++ 2 9771 #"!3 m : a5cb/ 
  7"l8 nk.     o #"3 #"83 0 97  temperature sensor : !77   2!774+ a: #3 23ofb (l$;3p f this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. sk50gd12t4t 2 27-04-2009 dil ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t s ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 6 typ. gate charge characteristic sk50gd12t4t 3 27-04-2009 dil ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 10 cal diode forward characteristic sk50gd12t4t 4 27-04-2009 dil ? by semikron
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q $"9 b +  8( )/c sk50gd12t4t 5 27-04-2009 dil ? by semikron


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