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05/13/11 www.irf.com 1 hexfet power mosfet AUIRF3004WL gds gate drain source description specifically design for automotive applications this widelead to- 262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower rds(on) when compared with a traditional to-262 package housing the same silicon die. this greatly helps in reducing condition losses, achieving higher current levels or enabling a system to run cooler and have improved efficiency. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive and other applications. features advanced process technology ultra low on-resistance 50% lower lead resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ automotive grade absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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v (br)dss 40v r ds(on) typ. 1.27m max. 1.40m i d (silicon limited) 386a i d (package limited) 240a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.40 c/w 375 6.1 -55 to + 175 20 2.5 max. 386 273 1544 240 a c 300 (1.6mm from case) 470 see fig. 14, 15, 22a, 22b,

2 www.irf.com calculated continuous current based on maximum allowable junction temperature. package limitation current is 240a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. http://www.irf.com/technical-info/appnotes/an-1140.pdf repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.018mh r g = 50 , i as = 232a, v gs =10v. part not recommended for use above this value. s d g i sd 232a, di/dt 907a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss .
!"# static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v / / dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 140 210 q gs gate-to-source charge ??? 53 ??? q gd gate-to-drain ("miller") charge ??? 49 ??? q sync total gate charge sync. (q g - q gd ) ??? 91 ??? t d(on) turn-on delay time ??? 19 ??? t r rise time ??? 220 ??? t d(off) turn-off delay time ??? 90 ??? t f fall time ??? 130 ??? c iss input capacitance ??? 9450 ??? c oss output capacitance ??? 1930 ??? c rss reverse transfer capacitance ??? 975 ??? c oss eff. (er) effective output capacitance (energy related) ??? 2330 ??? c oss eff. (tr) effective output capacitance (time related) ??? 2815 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 386 (body diode) i sm pulsed source current ??? ??? 1544 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 41 62 t j = 25c v r = 34v, ??? 51 77 t j = 125c i f = 232a q rr reverse recovery charge ??? 62 93 t j = 25c di/dt = 100a/ s ??? 99 149 t j = 125c i rrm reverse recovery current ??? 2.3 ??? a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) i d = 232a r g = 2.7 v dd = 26v i d = 232a, v ds =0v, v gs = 10v t j = 25c, i s = 195a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5ma v gs = 10v, i d = 195a v ds = v gs , i d = 250 a v ds = 40v, v gs = 0v v ds = 32v, v gs = 0v, t j = 125c mosfet symbol showing the v ds =20v conditions v gs = 10v v gs = 0v v ds = 32v ? = 1.0mhz, see fig.5 v gs = 0v, v ds = 0v to 32v , see fig.11 v gs = 0v, v ds = 0v to 32v conditions v ds = 10v, i d = 195a i d = 232a v gs = 20v v gs = -20v na a nc ns pf a ns nc

www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 195a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 180 200 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 232a

4 www.irf.com fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 10000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 25 50 75 100 125 150 175 t c , case temperature (c) 0 100 200 300 400 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 42 44 46 48 50 52 54 56 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 45a 86a bottom 232a 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc limited by package

www.irf.com 5 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulsewidth 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.2063 0.017817 0.0394 0.000116 0.1534 0.002614 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse)

6 www.irf.com fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figure 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 16. threshold voltage vs. temperature 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 232a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 1.0ma i d = 1.0a

www.irf.com 7 fig 23a. switching time test circuit fig 23b. switching time waveforms fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit fig 24a. gate charge test circuit fig 24b. gate charge waveform fig 21.
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period $ %&$' ()*) ( + - + + + - - - $ ?
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r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs v dd v ds l d d.u.t + - second pulse width < 1 s duty factor < 0.1% t p v (br)dss i as 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr v ds v gs 90% 10% t d(off) t d(on) t f t r

8 www.irf.com to-262 widelead package outline dimensions are shown in millimeters (inches)

to-262 widelead part marking information

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www.irf.com 9 ordering information base part number package type standard pack complete part number form quantity AUIRF3004WL to-262 widelead tube 50 AUIRF3004WL

10 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to disco ntinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific req uirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale s upplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operati ng safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair an d deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional rest rictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not re sponsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situatio n where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall ind emnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, co sts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed a nd manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s ow n risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agre e that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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