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1 of 20 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information rf mems ldmos 1 6 5 4 3 2 7 9 10 integrated power control dcs rfin band sel tx en vbatt gnd vramp gsm rfin gnd gsm rfout dcs rfout 8 rf3183 quad-band/gsm850/egsm900 /dcs/pcs/power amplifier module the rf3183 is a high power amplifier module with integrated power control. the input and out- put terminals are internally matched to 50 ? . the amplifier devices are manufactured on an advanced gallium arsenide heterojunction bipo lar transistor (gaas hbt) process. the module is designed to be the final amplification stage in a dual-mode gsm/edge mobile transmit lineup operating in the 824mhz to 915mhz (low) and 1710mhz to 1910mhz (high) bands (such as a cellular handset). band selection is controlled by an input on the module which selects either the low or high band. the device is packaged on a 5mmx5mm laminate module with a protective plastic over-mold. the rf3183 features rfmd?s latest integrated power flat- tening circuit, which significantly reduces curr ent and power variation into load mismatch. the rf3183 provides excellent esd protection at al l the pins. the rf3183 also provides integrated v ramp rejection filter which improves nois e performance and transient spectrum. features ? typical gmsk efficiency gsm850/900 48/53% dcs/pcs 50/53% ? auto v batt tracking circuit avoids switching transients at low supply voltage ? integrated power flattening circuit reduces power and current into mismatch ? integrated v ramp rejection filter eliminates external components applications ? quad-band gsm handsets ? gsm transmitter line-ups ? portable battery-powered equipment ? gsm850/egsm900/dcs/ pcs products ? gprs class 12 compatible products ? mobile edge/gprs data products rf3183quad-band/gsm850/egsm900 /dcs/pcs/power amplifier module rf3183 quad-band/gsm850/egsm900 /dcs/pcs/power amplifier module power amplifier module, 5 piece sample pack rf3183pcba-41x fully assembled evaluation board ds100412 ? ? package style: module (5mmx5mmx1mm)
2 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit supply voltage (v batt ) -0.5 to +6.0 v power control voltage (v ramp ) -0.5 to +3.0 v band select 3.0 v tx enable 3.0 v rf - input power 10.0 dbm max duty cycle 50 % output load vswr 10:1 operating temperature -30 to +85 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions v ramp v ramp input current 40 ? av ramp =v ramp,max v ramp =v ramp, max 2.2 v v ramp =v ramp, min 0.25 v band select switch band_sel ?high? 1.5 v high band (dcs1800/pcs1900) band_sel ?low? 0 0.7 v low band (gsm850/egsm900) band_sel input current 1 +10 ua tx_en tx_en ?high? 1.5 v pa ?on? tx_en ?low? 0 0.7 v pa ?off? tx_en input current 1 +10 ua overall power supply v batt range 3.0 3.6 4.5 v off current 10 ua tx_en low rf impedance lb_rf in 50 ? lb_rf out 50 ? hb_rf in 50 ? hb_rf out 50 ? caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. cellular 850mhz band gmsk mode nominal test conditions unless otherwise stated. temp=25 c, v batt =3.6v, freq=824mhz to 849mhz, 25% duty cycle, pulse width=1154 ? s, p in =-2dbm, band_sel=?low?, tx_en=?high?, v ramp =v ramp,max operating frequency range 824 849 mhz input power range, p in -2 +1 +4 dbm maximum output power 1 34.5 35.0 dbm temp=25 c, v batt =3.6v maximum output power 2 32.5 33 dbm temp=85 c, v batt =3.0v total efficiency (pae) 42 48 % p in =+1dbm output noise power -83 -82 dbm 869mhz to 894mhz, f 0 =849mhz, p out < rated p out , rbw=100khz forward isolation 1 -32 dbm tx_en=0v, vramp=v ramp,min , p in =+4dbm forward isolation 2 -10 dbm v ramp =v ramp,min , p in =+4dbm 2f 0 harmonics -15 -10 dbm p out < rated p out 3f 0 harmonics -25 -15 dbm p out < rated p out fundamental cross band coupling -1 3 dbm measured at dcs_rf out pin, p out < rated p out at gsm_rfout pin 2f 0 , 3f 0 cross band coupling -22 -17 dbm measured at dcs_rf out pin, p out < rated p out at gsm_rfout pin all other non-harmonic spurious -36 dbm over p in range, p out < rated p out input vswr 2:1 3:1 output load vswr stability -36 dbm load vswr=5.1 all phase angles, set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=5:1, full p in range, rbw=3mhz, no oscillations output load vswr ruggedness no damage or permanent degradation to device load vswr=10:1, all phase angles. set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=10:1 note: v ramp,max =2.2v, v ramp,min =0.25v, rated p out =34.5dbm
4 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. egsm 900mhz band gmsk mode nominal test conditions unless otherwise stated. temp=25 c, v batt =3.6v, freq=880mhz to 915mhz, 25% duty cycle, pulse width=1154 ? s, p in =-2dbm, band_sel=?low?, tx_en=?high?, v ramp =v ramp,max operating frequency range 880 915 mhz input power range, p in -2 +1 +4 dbm maximum output power 1 34.5 35 dbm temp=25c, v batt =3.6v maximum output power 2 32.5 33 dbm temp=+85c, v batt =3.0v total efficiency (pae) 47 53 % p in =+1dbm output noise power -80 -79 dbm 925mhz to 935mhz, f 0 =915mhz, p out < rated p out , rbw=100khz -83 -82 dbm 935mhz to 960mhz, f 0 =915mhz, p out < rated p out , rbw=100khz forward isolation 1 -32 dbm tx_en=0v, v ramp =v ramp,min , p in =+4dbm forward isolation 2 -10 dbm v ramp =v ramp,min , p in =+4dbm 2f 0 harmonics -15 -10 dbm p out < rated p out 3f 0 harmonics -25 -15 dbm p out < rated p out fundamental cross band coupling -1 3 dbm measured at dcs_rf out pin, p out < rated p out at gsm_rfout pin 2f 0 , 3f 0 cross band coupling -22 -17 dbm measured at dcs_rf out pin, p out < rated p out at gsm_rfout pin all other non-harmonic spurious -36 dbm over p in range, p out < rated p out input vswr 2:1 3:1 output load vswr stability -36 dbm load vswr=5:1 all phase angles. set v ramp where p out < rated p out into 50 ? load, then load switched to 5:1 vswr. full p in range, rbw=3mhz, no oscillations output load vswr ruggedness no damage or permanent degradation to device load vswr=10:1 all phase angles, set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=10:1 note: v ramp,max =2.2v, v ramp,min =0.25v, rated p out =34.5dbm
5 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. dcs 1800mhz band gmsk mode nominal test conditions unless otherwise stated. temp=25 c, v batt =3.6v, freq=1710mhz to 1785mhz, 25% duty cycle, pulse width=1154 ? s, p in =-2dbm, band_sel=?high?, tx_en=?high?, v ramp =v ramp,max operating frequency range 1710 1785 mhz input power range, p in -2 +1 +4 dbm maximum output power 1 32.0 33 dbm temp=25c, v batt =3.6v maximum output power 2 30 31 dbm temp = +85 o c, v batt =3.0v total efficiency (pae) 43 50 % p in =+1dbm output noise power -81 -77 dbm 1805mhz to 1880mhz, f 0 =1785mhz, p out < rated p out , rbw=100khz forward isolation 1 -32 dbm tx_en=0v, v ramp =v ramp,min , p in =+4dbm forward isolation 2 -10 dbm v ramp =v ramp,min , p in =+4dbm 2f 0 harmonics -20 -10 dbm p out < rated p out 3f 0 harmonics -25 -15 dbm p out < rated p out all other non-harmonic spurious -36 dbm over p in range, p out < rated p out input vswr 2:1 3:1 output load vswr stability -36 dbm load vswr=5:1 all phase angles, set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=5:1, full p in range, rbw=3mhz, no oscillations output load vswr ruggedness no damage or permanent degradation to device load vswr=10:1 all phase angles set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=10:1 note: v ramp,max =2.2v, v ramp,min =0.25v, rated p out =32.0dbm
6 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . parameter specification unit condition min. typ. max. pcs 1900mhz band gmsk mode nominal test conditions unless otherwise stated. temp=25 c, v batt =3.6v, freq=1850mhz to 1910mhz, 25% duty cycle, pulse width=1154 ? s, p in =-2dbm, band_sel=?high?, tx_en=?high?, v ramp =v ramp,max operating frequency range 1850 1910 mhz input power range, p in -2 +1 +4 dbm maximum output power 1 32.0 33 dbm temp=25c, v batt =3.6v maximum output power 2 30 31 dbm temp = +85 o c, v batt =3.0v total efficiency (pae) 45 53 % p in =+1dbm output noise power -81 -77 dbm 1930mhz to 1990mhz, f 0 =1910mhz, p out < rated p out , rbw=100khz forward isolation 1 -32 dbm tx_en=0v, v ramp =v ramp,min , p in =+4dbm forward isolation 2 -10 dbm v ramp =v ramp,min , p in =+4dbm 2f 0 harmonics -20 -10 dbm p out < rated p out 3f 0 harmonics -25 -15 dbm p out < rated p out all other non-harmonic spurious -36 dbm over p in range, p out < 32dbm input vswr 2:1 3:1 output load vswr stability -36 dbm load vswr=5:1 all phase angles, set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=5:1, full p in range, rbw=3mhz, no oscillations output load vswr ruggedness no damage or permanent degradation to device load vswr=10:1 all phase angles, set v ramp where p out < rated p out into 50 ? load, then load switched to vswr=10:1 note: v ramp,max =2.2v, v ramp,min =0.25v, rated p out =32.0dbm
7 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pin out top view pin function description 1dcs_rfin rf input to the high-band pa. it is dc-blocked within the part. 2bandsel digital input enables either the low band or high band amplifier die within the module. a logic low selects low band (gsm850/egsm900), a logic high selects high band (dcs1800/pcs1900). this pin is a high imped- ance cmos input with no pull-up or pull-down resistors. 3tx_en digital input enables or disables the internal circuitry. when disabled, the module is in the off state, and draws virtually zero current. this pin is a high impeda nce cmos input with no pull-up or pull-down resistors. 4vbatt main dc power supply for all circuitry in the rf3183. traces to this pin will have high current pulses during operation so proper decoupling and routing should be observed. 5gnd ground. 6vramp analog signal used to control the output power. the signal also ramps the output power up and down. an inter- nal 300khz filter reduces switching orfs resulting fr om transitions between dac steps. most systems will have no need for external v ramp filtering. this pin provides an impedance of approximately 60k ? . 7gsmin rf input to the low-band pa. it is dc-blocked within the part. 8gnd ground. 9gsmout rf output from the low-band pa. it is dc-blocked within the part. 10 dcsout rf output from the high-band pa. it is dc-blocked within the part. 11 gnd main ground pad in center of part. this pad should be ti ed to the main ground plane with as little loss as pos- sible for optimum linearity. 1 2 3 4 5 6 7 8 9 10 gnd gsm in dcs in band select tx en vbatt gnd vramp 11 dcs out gsm out
8 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . theory of operation figure 1. rf3183 power amplifier simp lified block diagram of a single band overview the rf3183 is designed for use as the final rf amplifier in gsm850, egsm900, dcs and pcs handheld digital cellular equip- ment, and other applications operating in the 824mhz to 915mhz, and 1710mhz to 1910mhz bands. the rf3183 is a high power, power amplifier module with powerstar? integrated power control. the integrated power control circuitry provides reli- able control of saturated power by a single analog voltage (v ramp ). this control voltage can be driven directly from a dac out- put. powerstar??s predictable power versus v ramp relationship allows single-point calibration in each band. single-point calibration enables handset manufacturers to achieve si mple and efficient phone calibration in production. the rf3183 also features an integrated saturation detection circ uit, which is an industry first for standard pa module prod- ucts. the saturation detection circuit automatically monitors batt ery voltage, and adjusts the power control loop to reduce tra n- sient spectrum degradation that would othe rwise occur at low battery voltage conditio ns. prior to the implementation of the saturation detection circuit, handset desi gners were required to adjust the ramp voltage within the system software. rfmd?s saturation detection circuit reduces handset design time and ensures robust performance over broad operating conditions. rf out h(s) v batt tx_en rf in v ramp tx_en agc amplifier
9 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . power and current into mismatch transmitters are often designed to operate only under perfect 50 ? loads. in the real application when a pa is subjected to mismatch conditions, performance degrades most likely in a re duction of output power, increased harmonic levels, increased transient spectrum, and catastrophic failures. rf3183 has an integrated power flattening circuit that reduces the amount of current variation under load mismatch. when a mismatch is presented to the output of the pa, its output impe dance is varied and could present a load that will increase out- put power. as the output power increases, so does current cons umption. the current consumption can become very high if not monitored and limited. the power-flattening circuit is integrated onto the cmos controller and requires no input from the user. into a mismatch, current varies as phase changes. the power-fl attening circuit monitors current through an internal sense resistor. as current changes, the loop is adjusted in order to maintain current. under nominal conditions, this loop is not act i- vated and is seemingly transparent. the result is flatter power and reduced current into mismatch as shown in the following fig - ures. test condition: v batt =3.6v, rf in =1dbm, temperature=25c, tx frequency=915mhz figure 2. rf3183 power variation under mismatch vswr 3:1 31.00 31.50 32.00 32.50 33.00 33.50 34.00 34.50 35.00 0 30 60 90 120 150 180 210 240 270 300 330 delivered ? power ? in ? dbm phase ? angle 2644.01 2644.02 2644.03 2644.04 2644.05 2644.06 2644.07 2644.08 2644.09 2644.10 2644.11 2644.12 2644.13 2644.14 2644.15 2644.21 2644.22 2644.23 2644.24 2644.25
10 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . test condition: v batt =3.6v, rf in =1dbm, temperature=25c, tx frequency=915mhz figure 3. rf3183 current variation under mismatch vswr 3:1 rf3183 operates as a traditional powersta r? module. the incorporated control loop regulates the collector voltage of the amplifiers while the stages are held at a constant bias. the basic circuit diagram is shown in figure 2. figure 4. rf3183 basic circuit by regulating the collector voltage (v cc ), the stages are held in saturation across all power levels. as v cc is decreased, output power decreases as described by equation 1. the equation shows that load impedance affects output power, but to a lesser degree than v cc supply variations. since the rf3183 regulates v cc , the dominant cause of power variation is eliminated. 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 2100.00 2200.00 2300.00 2400.00 2500.00 0 30 60 90 120 150 180 210 240 270 300 330 icc ? in ? ma phase ? angle 2644.01 2644.02 2644.03 2644.04 2644.05 2644.06 2644.07 2644.08 2644.09 2644.10 2644.11 2644.12 2644.13 2644.15 2644.21 2644.22 2644.23 2644.24 2644.25 + - saturation detector vramp 3 db bw 300 khz - + h(s) vbatt vcc rf in rf out tx enable
11 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . (eq. 1) rf3183 power is ramped up and down through the v ramp control voltage which in turn controls the collector voltage of the amplifier stages. the rf signal applied at the rf in pin must be a constant amplitude signal and should be high enough to sat- urate the amplifier in the gsm mode. the input power (p in ) range is indicated in the specifications. power levels below this range will result in reduced maximum output power and the pote ntial for more variation of ou tput power over extreme condi- tions. higher input power is unnecessary and will require more current in the circuitry driving the power amplifier and will increase the minimum output power of the rf3183. the saturation detector circuit monitors the v batt and v cc voltages and adjusts the power control loop to prevent the series- pass fet regulator from entering saturation. if the v cc regulator were to saturate, the response time would increase dramati- cally. this is undesirable because the v cc regulator must accurately follow the burs t ramp up or ramp down applied to the v ramp pin, or the transient spectrum will degrade. power ramping and timing the rf3183 should be powered on according to the power-on se quence provided in the datasheet. the power on sequence is designed to prevent operation of the ampl ifier under conditions that could cause da mage to the device or erratic operation. in the power-on sequence, there are some set-up times associat ed with the control signals of the rf3183. the most important of these is the settling time between txen going high and when v ramp can begin to increase. this time is often referred to as the ?pedestal? and is required so that the internal power contro l loop and bias circuitry can settle after being turned on. the rf3183 requires at least 1.5s or two quarter bit times for proper settling of the power control loop.. figure 5. etsi time mask for a single gsm time slot the v ramp waveform used with the rf3183 must be created such that the output power falls into this power versus time mask. the ability to ramp the rf output power to meet etsi switching transient and time mask requirements partially depends upon the predictability of output power versus v ramp response of the power amplifier. the powerstar? control in the rf3183 is very capable of meeting switching transient requirements with the proper raised cosine waveform applied to the v ramp input. the ramping waveform on v ramp must not start until after tx_en is asserted. a ramp of about 12us is required to control switching transients at high power levels. p out dbm 10 2 v cc v sat ? ? ?? 2 8 r 110 3 ? ?? ------------------------------------------- log =
12 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . the v ramp voltage range should be limited to min and max values in the specifications to avoid damage or undesirable opera- tion. at some voltage below 0.3v, the cmos controller switches of f and turns off the pa. the effect of this is a discontinuity in the response curve. in order to guarantee minimum switching transients, it is recommended that the minimum ramp voltage be set slightly above the voltage where this discontinuity occurs (see figure 3). the v ramp voltage at which the discontinuity occurs is unique to the design of the part and does not sh ift significantly across process. figure 7 shows the power versus v ramp response curve for five parts which represent typical process variation of the discontinuity test condition: 824mhz, 3.6v batt , 1dbm rfin, 25c temp. figure 6. rf3183 lb p out versus v ramp as the v ramp voltage approaches its maximum, the linear regulator in the cmos saturates, the output power reaches its maxi- mum level, and the v ramp versus output power curve levels out. the saturation point of the linear regulator is directly propor- tional to the v batt supply voltage applied. the v ramp voltage can be increased above the sa turation level, but the pa will not produce any higher output power. it is not recommended to apply a v ramp voltage above the absolute maximum specification, as the part could be damaged. when the fet pass-device in the linear regulator saturates, the response time of the regulated voltage slows significantly. if the control voltage changes (as in ramp-down) the saturated linear regulator does not react fast enough to follow the ramp-down curve. the result is a discontinuity in the output power ramp and degraded switching transients . this usually occurs at low v batt levels where the regulated v cc voltage is very near the supply voltage. the rf3183 incorporates a saturation detection circuit which senses if the fet pass-device is entering saturation and reduces v cc to prevent it. this relieves the requirement of the transceiver controller to adjust the maximum v ramp when the battery voltage is low. design considerations there are several key factors to consider in the implementati on of a mobile phone transmitter solution using the rf3183: ? system efficiency: the rf output match can be designed to improve system efficiency by presenting a non 50 ? load. output matching circuits for the rf3183 should be a compromise between system efficiency and power. ? power variation due to supply voltage: \ 50.00 \ 40.00 \ 30.00 \ 20.00 \ 10.00 0.00 10.00 20.00 30.00 40.00 2644.01 2644.04 2644.06 2644.07 2644.08 2644.09 2644.10 2644.11 2644.12 2644.13 2644.14 2644.15 2644.21 2644.22 2644.23 2644.24 2644.25
13 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . output power does not vary due to supply voltage under normal op erating conditions. by regulating the collector voltage to the pa the voltage sensitivity is essentially eliminated. this covers most cases where the pa will be operated. however, as the bat - tery discharges and v batt approaches its lower operating limit, the output power from the pa will start to drop. this cannot be avoided as a certain supply voltage is required to produce full output power. system specifications must allow for this power decrease. switching transients due to low battery conditions are reduced by the saturation detection circuit in rf3183. the saturation detection circuit consists of a feedback loop which detects fet saturation. as the fet appr oaches saturation, the circuit adjusts the v cc voltage in order to ensure minimum switching transients. the saturation detection circuit is integrated into the cmos controller and requires no additional input from the user. ? power variation due to temperature rf3183 output power variation due to temperature is largest at low power levels and decreases at the upper power levels. this follows the etsi specification limits which allow a larger tole rance over extreme conditions at low power levels. since output power is controlled by an analog input, factors other than the power amplifier will have an effect on total system power varia- tion. the entire system containing the rf3183 should be tested to determine whether compensation is necessary. at high tem- peratures and low battery voltages, the pa cannot support as h igh of an output power. in this condition, increasing v ramp will not provide more output power, so compensa tion may not provide the intended result. ?noise power the bias point of the rf3183 is kept constant and the gain in th e first stage is always high. this has the effect of maintainin g a consistent noise power which does not increase at reduced output power levels. for that reason, noise power is at its highest when v ramp is at its maximum. the rf3183 does not create enough noise in the receive band to cause system receive band noise power failures, but it may amplify noise from other sources. care must be taken to prevent noise from entering the power amplifier. ? loop stability and loop bandwidth variation across power levels the design of a proper power control loop involves trade-offs affecting stability, transient spectrum and burst timing. in non- powerstar? architectures, backing off power causes gain variatio n which can affect loop bandwidth. in rf3183 the loop band- width is determined by v cc regulator bandwidth and does not change over ou tput power. loop stability is maintained since amplifier bias voltage is constant. ?transient spectrum switching transients occur when the up and down power ramps are not smooth enough, or suddenly change shape. if the con- trol slope of a pa has an inflection point within the output po wer control range, or if the slope is too steep, switching trans ients will result. in rf3183 all stages are kept constantly biased an d the output power is controlled by changing the collector volta ge according to equation 1. inflection points are eliminated by th is design. in addition, the steepness of the power control slope is reduced because v ramp actively controls output power over a larger voltage range than many other power amplifiers. ?harmonics harmonics are natural products of high effi ciency, saturated power amplifiers. an idea l, class 'e', saturated power amplifier w ill produce a perfect square wave. looking at the fourier transfor m of a square wave reveals high harmonic content. although this is common to all saturated power amplifiers, there are othe r factors that contribute to harmonic content as well. with many power control methods, a peak power detector is used to rectify and sense forward power. through the rectification pro- cess, there is additional squaring of the waveform resulting in higher harmonics. the rf3183 has no need for the detector diode; therefore, the harmonics coming out of the pa should represent maximum power of the harmonics throughout the trans- mit chain. this is based on proper harmonic termination of th e transmit port. the receive port termination on antenna switch as well as the harmonic impedance from the switch itself will have an impact on harmonics. these terminations should be adjusted to correct problems with harmonics.
14 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . gmsk power on/off sequence power on sequence: 1. appl y vbatt 2. apply band_sel 3. apply rfin 4. appl y mi ni mum vramp/ vbi as (~0.25v) 5. apply tx_en 6. ramp vramp for desired output power the power down sequence is the reverse order of the power on sequence. >1.5 v pa on vbatt 3.2 v to 4.5 v band_sel <0.7 v low band >1.5 v high band tx_en vramp/ vbi as 2.2v for max p out ~ 0.25 v for min p out
15 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . application schematic 1 6 5 4 3 2 7 9 10 integrated power control dcs rfin band sel tx en vbatt gnd vramp gsm rfin gnd gsm rfout dcs rfout 8 supply bypass capacitor
16 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board schematic band sel gnd dcs rfin gsm rfin dcs out gsm out r4 0 ? 0402 tx en vbatt+ c1 68 ? f + r5 dni 0402 vramp 50 ? ? strip 50 ? ? strip 50 ? ? strip 50 ? ? strip j3 black banana receptacle j2 red banana receptacle vbatt+ 4 3 2 1 band sel r1 100 k ? 0402 vmode r2 100 k ? 0402 j1 4-pin board-edge header block 1 6 5 4 3 2 7 8 9 10 integrated power control gnd 11
17 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . evaluation board layout board size 2.0? x 2.0? board thickness 0.046?, board material rogers ro4003, multi-layer package drawing rf3183410(1)
18 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd?s qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirical data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land and solder mask pattern
19 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . pcb stencil
20 of 20 rf3183 ds100412 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . tape and reel carrier tape basic dimensions are based on eia 481. the pocket is designed to hold the part for shipping and loading onto smt manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. th e individual pocket design can vary from vendor to vendor, but width and pitch will be consistent. carrier tape is wound or placed onto a shipping reel either 330mm (13 inches) in diameter or 178mm (7 inches) in diameter. the center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. prior to shipping, moisture sensitive parts (msl level 2a-5a) ar e baked and placed into the pockets of the carrier tape. a cove r tape is sealed over the top of the entire length of the carrier tape. the reel is sealed in a moisture barrier esd bag with the appropriate units of desiccant and a humidity indicator card, whic h is placed in a cardboard shipping box. it is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. if the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125c. if baking is required, devices may be baked according to section 4, table 4-1, of joint industry standard ipc/jedec j-std-033. the table below provides information for carrier tape and reel s used for shipping the devices described in this document. tape and reel figure 1. 5mmx5mm (carrier tape drawing with part orientation) rfmd part number reel diameter inch (mm) hub diameter inch (mm) width (mm) pocket pitch (mm) feed units per reel RF3183TR13 13 (330) 4 (102) 12 8 single 2500 part number yyww trace code part number yyww trace code part number yyww trace code unless otherwise specified, all dimension tolerances per eia-481. direction of feed sprocket holes toward rear of reel top view pin 1 location part number yyww trace code

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