www.irf.com 1 02/22/11 IRG7PA19UPBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter features g c e c v ce min 360 v v ce(on) typ. @ i c = 30a 1.49 v i rp max @ t c = 25c 300 a t j max 150 c key parameters absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i nominal nominal current i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.2 r cs case-to-sink, flat, g reased surface 0.24 ? c/w r ja junction-to-ambient, typical socket mount ?40 wt weight 6.0 ? g max. 26 300 50 30 15 300 -40 to + 150 104 42 0.83 pd-96357
2 www.irf.com half sine wave with duty cycle <= 0.05, ton=2sec. r q is measured at t j of approximately 90c. pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 360 ??? ??? v ? v ces / ? t j breakdown voltage temp. coefficient ??? 0.34 ??? v/c ??? 1.26 1.52 ??? 1.41 ??? ??? 1.49 ??? 1.65 ??? v ??? 2.12 ??? 2.93 ??? 1.51 ??? v ge(th) gate threshold voltage 2.2 ??? 4.7 v ? v ge ( th ) / ? t j gate threshold voltage coefficient ??? -10 ??? mv/c i ces collector-to-emitter leakage current ??? 1.0 20 35 200 ??? 130 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 62 ??? s q g total gate charge ??? 38 ??? q gc gate-to-collector charge ??? 12 ??? t d(on) turn-on delay time ??? 15 ??? i c = 25a, v cc = 196v t r rise time ??? 21 ??? ns r g = 10 ? , l = 200h, l s = 150nh t d(off) turn-off delay time ??? 68 ??? t j = 25c t f fall time ??? 88 ??? t d(on) turn-on delay time ??? 15 ??? i c = 25a, v cc = 196v t r rise time ??? 23 ??? ns r g = 10 ? , l = 200h, l s = 150nh t d(off) turn-off delay time ??? 84 ??? t j = 150c t f fall time ??? 191 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j human body model machine model c ies input capacitance ??? 1100 ??? c oes output capacitance ??? 57 ??? pf c res reverse transfer capacitance ??? 30 ??? l c internal collector inductance between lead, nh 6mm (0.25in.) l e internal emitter inductance from package esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v conditions v ge = 0v, i ce = 250a reference to 25c, i ce = 1ma v ge = 15v, i ce = 70a v ge = 15v, i ce = 15a v ge = 15v, i ce = 30a v ce = 360v, v ge = 0v v ce = 360v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 360v, v ge = 0v, t j = 125c ? = 1.0mhz and center of die contact ??? 854 ??? v cc = 240v, v ge = 15v, r g = 5.1 ? l = 220nh, c= 0.40f, v ge = 15v ??? v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 25a, t j = 150c v ge = 15v, i ce = 40a v ge = 15v, i ce = 120a v ge = 15v, i ce = 25a v ce = v ge , i ce = 1.0ma 7.5 ??? ??? 4.5 ??? ??? nc ??? 1083
www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 024681012 v ge (v) 0 50 100 150 200 i c e ( a ) t j = 25c t j = 150c 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) t j = 25c t j = 150c i c = 25a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v
4 www.irf.com fig 7. maximum collector current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area fig 8. typical repetitive peak current vs. case temperature 160 170 180 190 200 210 220 230 i c , peak collector current (a) 500 600 700 800 900 1000 1100 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 20 40 60 80 100 120 140 160 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse 1msec 190 200 210 220 230 240 250 260 270 v cc, collector-to-supply voltage (v) 700 800 900 1000 1100 1200 1300 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 40 45 50 55 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 50 100 150 200 250 300 350 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2s duty cycle <= 0.05 half sine wave
www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 1020304050 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 240v v ces = 150v v ces = 60v i c = 25a 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.03906 0.000026 0.38906 0.000209 0.49531 0.002373 0.27656 0.016943
6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st
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year 1 = 2001 dat e code part number int ernat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead-f r ee" week 35 lot code in the assembly line "h" as s e mbled on ww 35, 2001 note: "p" in as s embly line pos ition example: wit h as s e mb l y t his is an irfpe30 lot code 5657 to-247ac package is not recommended for surface mount application. data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 101 n. sepulveda blvd, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2011
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