vishay general semiconductor sbl8l40, sblf8l40 & sblb8l40 document number: 88825 revision: 25-may-07 www.vishay.com 1 schottky barrier rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020c, lf max peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 seconds (for to-220ac & ito-220ac package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. mechanical data case: to-220ac, ito-220ac, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: as marked mounting torque: 10 in-lbs maximum major ratings and characteristics i f(av) 8 a v rrm 40 v i fsm 250 a v f 0.41 v t j max 125 c to-263ab 1 2 case pin 2 pin 1 to-220ac sbl8l40 ito-220ac sblf8l40 sblb8l40 pin 1 pin 2 k heatsink 1 2 1 2 k pin 2 pin 1 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol value unit maximum repetitive peak reverse voltage v rrm 40 v working peak reverse voltage v rwm 28 v maximum dc blocking voltage v dc 40 v maximum average forward rectified current (see fig. 1) i f(av) 8a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per leg i fsm 250 a peak repetitive reverse current at t p = 2 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv / dt 10000 v / s operating junction and storage temperature range t j , t stg - 65 to + 125 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 minute v ac 1500 v
www.vishay.com 2 document number: 88825 revision: 25-may-07 vishay general semiconductor sbl8l40, sblf8l40 & sblb8l40 note: (1) pulse test: 300 s pulse width, 2 % duty cycle note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) at i f = 4 a, at i f = 4 a, at i f = 8 a, at i f = 8 a, t j = 25 c t j = 125 c t j = 25 c t j = 125 c v f 0.44 0.35 0.50 0.41 v maximum instantaneous reverse current at dc blocking voltage (1) t j = 25 c t j = 100 c i r 1.0 75 ma thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol sbl sblf sblb unit typical thermal resistance fr om junction to case per leg r jc 3.2 4.0 3.2 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac sbl8l40-e3/45 1.80 45 50/tube tube ito-220ac sblf8l40-e3/45 1.94 45 50/tube tube to-263ab sblb8l40-e3/45 1.33 45 50/tube tube to-263ab sblb8l40-e3/81 1.33 81 800/reel tape reel to-220ac sbl8l40he3/45 (1) 1.80 45 50/tube tube ito-220ac sblf8l40he3/45 (1) 1.94 45 50/tube tube to-263ab sblb8l40he3/45 (1) 1.33 45 50/tube tube to-263ab sblb8l40he3/81 (1) 1.33 81 800/reel tape reel figure 1. maximum forward current derating curve 0 6 8 10 50 0 100 150 4 2 sblf 8 l40 sbl 8 l40 sblb 8 l40 a v erage for w ard rectified c u rrent (a) case temperat u re (c) figure 2. typical instantaneous forward characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.01 0.1 10 100 1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 125 c t a = 25 c
document number: 88825 revision: 25-may-07 www.vishay.com 3 sbl8l40, sblf8l40 & sblb8l40 vishay general semiconductor figure 3. typical reve rse characteristics figure 4. typical j unction capacitance 60 40 20 0 100 8 0 0.1 10 10 2 10 3 10 4 10 5 1 t a = 125 c t a = 25 c t a = 75 c re v erse v oltage ( v ) instantaneo u s re v erse c u rrent ( a) 1 0.1 10 100 1000 10000 100 re v erse v oltage ( v ) j u nction capacitance (pf) figure 5. transient thermal impedance 1 0.1 0.01 10 100 10 1 heating time (s) thermal impedance (c/ w )
www.vishay.com 4 document number: 88825 revision: 25-may-07 vishay general semiconductor sbl8l40, sblf8l40 & sblb8l40 package outline dimensions in inches (millimeters) 0.154 (3.91) 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027(0.6 8 ) 0.205(5.20) 0.195(4.95) 0.560 (14.22) 0.530 (13.46) 0.022(0.56) 0.014(0.36) 0.110 (2.79) 0.100 (2.54) 12 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.105 (2.67) 0.095 (2.41) 0.635 (16.13) 0.625 (15. 8 7) 0.603 (15.32) 0.573 (14.55) pi n 0.415 (10.54)max. 0.370 (9.40) 0.360 (9.14) 0.057 (1.45) 0.045 (1.14) case pi n 2 pi n 1 to-220ac 0.404 (10.26) 0.3 8 4 (9.75) see note 0.076 ref. (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) pi n 1 2 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.3 8 ) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.076 ref. (1.93) ref. see note 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.190 (4. 8 3) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.135 (3.43) dia. 0.122 (3.0 8 )dia. 7 ref. 0.110 (2.79) 0.100 (2.54) 0.02 8 (0.71) 0.020 (0.51) ito-220ac expos u re (0.25) 0.010 max. copper n ote: copper expos u re is allo w a b le for 0.005 (0.13) max. from the b ody 0.3 8 0 (9.65) 0.41 1 (10.45) 0.320 ( 8 .13) 0.360 (9.14) 0.591(15.00) 0.624 (15. 8 5) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4. 8 3) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0-0.01 (0-0.254) 0.027 (0.6 8 6) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.0 8 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3. 8 1) 0.33 ( 8 .3 8 ) mountin g pad layout mi n . mi n . mi n . mi n .
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