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IRG4PC50UDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.65v @v ge = 15v, i c = 27a parameter min. typ. max. units r jc junction-to-case - igbt ------ ------ 0.64 r jc junction-to-case - diode ------ ------ 0.83 c/w r cs case-to-sink, flat, greased surface ------ 0.24 ------ r ja junction-to-ambient, typical socket mount ----- ----- 40 wt weight ------ 6 (0.21) ------ g (oz) thermal resistance ultrafast copack igbt 04/23/04 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 55 i c @ t c = 100c continuous collector current 27 i cm pulsed collector current 220 a i lm clamped inductive load current 220 i f @ t c = 100c diode continuous forward current 25 i fm diode maximum forward current 220 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-247ac package benefits ? generation 4 igbt's offer highest efficiencies available ? igbt's optimized for specific application conditions ? hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's pd -95185 w to-247ac www.irf.com 1 ? lead-free
IRG4PC50UDPBF 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 180 270 i c = 27a qge gate - emitter charge (turn-on) ---- 25 38 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 61 90 v ge = 15v t d(on) turn-on delay time ---- 46 ---- t j = 25c t r rise time ---- 25 ---- ns i c = 27a, v cc = 480v t d(off) turn-off delay time ---- 140 230 v ge = 15v, r g = 5.0 ? t f fall time ---- 74 110 energy losses include "tail" and e on turn-on switching loss ---- 0.99 ---- diode reverse recovery. e off turn-off switching loss ---- 0.59 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 1.58 1.9 t d(on) turn-on delay time ---- 44 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 27 ---- ns i c = 27a, v cc = 480v t d(off) turn-off delay time ---- 240 ---- v ge = 15v, r g = 5.0 ? t f fall time ---- 130 ---- energy losses include "tail" and e ts total switching loss ---- 2.3 ---- mj diode reverse recovery. l e internal emitter inductance ---- 13 ---- nh mea sured 5mm from package c ies input capacitance ---- 4000 ---- v ge = 0v c oes output capacitance ---- 250 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 52 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 50 75 ns t j = 25c see fig. ---- 105 160 t j = 125c 14 i f = 25a i rr diode peak reverse recovery current ---- 4.5 10 a t j = 25c see fig. ---- 8.0 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 112 375 nc t j = 25c see fig. ---- 420 1200 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ---- 250 ---- a/s t j = 25c during t b ---- 160 ---- t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ---- ---- v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ---- 0.60 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.65 2.0 i c = 27a v ge = 15v ---- 2.0 ---- v i c = 55a see fig. 2, 5 ---- 1.6 ---- i c = 27a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ---- -13 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance 16 24 ---- s v ce = 100v, i c = 27a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 6500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.3 1.7 v i c = 25a see fig. 13 ---- 1.2 1.5 i c = 25a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4PC50UDPBF www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 1000 0110 ce c i , collector-to-emitter current (a) v , collector-to-em itter volta g e ( v ) t = 150c t = 25c j j a v = 1 5 v 20 s pulse w idth ge 1 10 100 1000 4 6 8 10 12 c i , collector-to-em itter current (a) ge t = 25c t = 150c j j v , gate-to-emitter volta g e ( v ) a v = 10v 5s pulse w idth cc 0 10 20 30 40 0.1 1 10 100 f, frequenc y (khz) load current (a) a 60% of rated voltage duty cycle: 50% t = 1 25c t = 90 c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 40w
IRG4PC50UDPBF 4 www.irf.com fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-em itter voltage (v) v = 15v 80s pulse w idth ge a t , junction tem p erature ( c ) j i = 54a i = 27a i = 14 a c c c 0 10 20 30 40 50 60 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g l e p u ls e (thermal response) therm al response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. p eak t = p x z + t 1 2 j dm thjc c
IRG4PC50UDPBF www.irf.com 5 fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 4 8 12 16 20 0 40 80 120 160 200 ge v , gate-to-emitter voltage (v) g q , total gate char g e (nc) a v = 400v i = 27a ce c 1.0 1.5 2.0 2.5 3.0 0 102030405060 g total switching losses (mj) a r , g ate resistance ( ? ) v = 4 8 0v v = 1 5 v t = 2 5 c i = 27 a cc ge j c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a t , junction temperature (c) j r = 5.0 ? v = 15v v = 480v i = 54a i = 27a i = 14a g ge cc c c c 0 2000 4000 6000 8000 1 10 100 ce c, capacitance (pf) v , collector-to-em itter volta g e ( v ) a v = 0v , f = 1m hz c = c + c , c sho rted c = c c = c + c c ie s c res c oes ge ies ge gc ce res gc oes ce gc
IRG4PC50UDPBF 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 0.6 1.0 1.4 1.8 2.2 2.6 fm f instantaneous forward current - i (a) forward volta g e dro p - v ( v ) t = 150c t = 125c t = 25c j j j 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-em itter voltage (v) i , collector-to-e m itter c urrent (a) safe operating area v = 20v t = 125c ge j 0.0 2.0 4.0 6.0 8.0 0 102030405060 c total switching losses (mj) i , c ollector-to-e m itte r c urrent (a ) a r = 5 .0 ? t = 15 0 c v = 480v v = 1 5 v g j cc ge
IRG4PC50UDPBF www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 300 600 900 1200 1500 100 1000 f di /dt - ( a/ s ) rr q - (nc) i = 1 0a i = 25a i = 50a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - ( a/ s ) di(rec)m/dt - (a/s) i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - ( a/ s ) i - (a) irrm i = 10a i = 25a i = 50a f f f v = 200v t = 125c t = 25c r j j 20 40 60 80 100 120 140 100 1000 f di /dt - ( a/ s ) t - (ns) rr i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j
IRG4PC50UDPBF 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr
IRG4PC50UDPBF www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PC50UDPBF 10 www.irf.com notes: repetitive rating: v ge = 20v; pulse width limited by maximum junction temperature (figure 20) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. to-247ac part marking information example: as s emble d on ww 35, 2000 lot code 5657 wi t h as s e mb l y t his is an irfpe30 in the assembly line "h" 035h logo int ernat ional rect ifier irfpe30 lot code as s e mb l y 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" to-247ac package outline dimensions are shown in millimeters (inches) data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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