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www.irf.com 1 11/4/05 IRF6668 directfet power mosfet directfet isometric applicable directfet outline and substrate outline (see p.7,8 for details)

description the IRF6668 combines the latest hexfet? power mosfet silicon technology with advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6668 is optimized for primary side bridge topologies in isolated dc-dc applications, for 48v(10%) or 36v-60v etsi input voltage range systems. the IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated dc- dc topologies. the reduced total losses in the device coupled with the high level of thermal performance enables high efficien cy and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated dc-dc converters. click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. repetitive rating; pulse width limited by max. junction temperature. t c measured with thermocouple mounted to top (drain) of part. sh sj sp mz mn v dss v gs r ds(on) q g tot q gd 80v max 20v max 12m ? @ 10v 22nc 7.8nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 70c continuous drain current, v gs @ 10v i dm pulsed drain current a i s @ t c = 25c continuous source current (body diode) i s @ t c = 70c continuous source current (body diode) i sm pulsed source current (body diode) 170 170 81 52 44 max. 20 80 55 rohs compliant containing no lead or bromide low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for high performance isolated converter primary switch socket optimized for synchronous rectification low conduction losses compatible with existing surface mount techniques
2 www.irf.com pulse width 400s; duty cycle 2%. electrical characteristic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 80 ??? ??? v ? bv dss / ? t j breakdown voltage temp. coefficient ??? 0.097 ??? v/c r ds(on) static drain-to-source on-resistance ??? 12 15 m ? v gs(th) gate threshold voltage 3.0 4.0 4.9 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 22 ??? ??? s q g total gate charge ??? 22 31 q gs1 pre-vth gate-to-source charge ??? 4.8 ??? q gs2 post-vth gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain charge ??? 7.8 12 q godr gate charge overdrive ??? 7.8 ??? see fig. 14 q sw switch charge (q gs2 + q gd ) ??? 9.4 ??? q oss output charge ??? 12 ??? nc r g (internal) gate resistance ??? 1.0 ??? ? t d(on) turn-on delay time ??? 19 ??? t r rise time ??? 13 ??? t d(off) turn-off delay time ??? 7.1 ??? ns t f fall time ??? 23 ??? c iss input capacitance ??? 1320 ??? c oss output capacitance ??? 310 ??? c rss reverse transfer capacitance ??? 76 ??? pf c oss output capacitance ??? 1400 ??? c oss output capacitance ??? 200 ??? avalanche characteristics parameter min. typ. max. units e as single pulse avalanche energy ??? ??? 24 mj diode characteristics parameter min. typ. max. units v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 34 51 ns q rr reverse recovery charge ??? 40 60 nc v ds = 64v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 10v, i d = 12a v ds = 40v t j = 25c, i f = 12a, v dd = 40v di/dt = 100a/s t j = 25c, i s = 12a, v gs = 0v i d = 12a v ds = 16v, v gs = 0v v dd = 40v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 12a r g = 6.2 ? v ds = v gs , i d = 100a v ds = 80v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 12a v ds = 25v conditions see fig. 16 v gs = 0v, v ds = 64v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz conditions l = 0.088mh. see fig. 13 t j = 25c, i s = 23a, r g = 25 ?
www.irf.com 3 fig 1. maximum effective transient thermal impedance, junction-to-case note surface mounted on 1 in. square cu, steady state (still air).
used double sided cooling,

1 in. square cu board with small clip heatsink (still air). r is measured at
note note
1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.3173 0.000048 0.5283 0.000336 0.5536 0.001469 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c c ci= i / ri ci= i / ri absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 45 r ja junction-to-ambient 12.5 ??? c/w r jc junction-to-case ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? 270 -40 to + 150 max. 2.8 1.8 89
4 www.irf.com fig 3. typical output characteristics fig 2. typical output characteristics fig 4. typical transfer characteristics fig 5. normalized on-resistance vs. temperature fig 6. typical capacitance vs.drain-to-source voltage fig 7. typical total gate charge vs gate-to-source voltage 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v bottom 6.0v 60s pulse width tj = 25c 6.0v 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v bottom 6.0v 2 4 6 8 10 12 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 10v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 12a v gs = 10v 024681012141618202224 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 64v v ds = 40v i d = 12a
www.irf.com 5 fig 11. typical threshold voltage vs. junction temperature fig 10. typical source-drain diode forward voltage fig 13. maximum avalanche energy vs. drain current fig12. maximum safe operating area fig 8. typical on-resistance vs. gate voltage fig 9. typical on-resistance vs. drain current 4 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 12a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.3a 7.6a bottom 23a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v 0 20 40 60 80 100 i d , drain current (a) 0 10 20 30 40 50 60 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 7.0v vgs = 8.0v vgs = 10v vgs = 15v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 t y p i c a l v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec
6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14a. gate charge test circuit fig 14b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 15b. unclamped inductive waveforms t p v (br)dss i as fig 15a. unclamped inductive test circuit fig 16b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
1 0.1 % + -
www.irf.com 7 directfet substrate and pcb layout, mz outline (medium size can, z-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. fig 17.

for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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8 www.irf.com directfet outline dimension, mz outline (medium size can, z-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking code a b c d e f g h j k l m n p max 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.70 0.08 0.17 min 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.59 0.03 0.08 max 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.028 0.003 0.007 min 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.023 0.001 0.003 metric dimensions imperial
www.irf.com 9 directfet tape & reel dimension (showing component orientation). data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/05 standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRF6668). for 1000 parts on 7" reel, order IRF6668tr1 min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 note: controlling dimensions in mm code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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