Part Number Hot Search : 
W91414A BA5N10 200001 SKKH15 A1428BT1 E003198 BU606 BLF879P
Product Description
Full Text Search
 

To Download DMP2018LFK Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  DMP2018LFK document number: ds35357 rev. 5 - 2 1 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on)max i d t a = 25c -20v 16m ? @ v gs = -4.5v -12.8a 25m ? @ v gs = -2.0v -10a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? notebook pc applications ? portable equipment applications features and benefits ? low on-resistance ? low input capacitance ? low input/output leakage ? esd protected gate up to 2kv ? lead free by design, rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-dfn2523-6 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 3) part number case packaging DMP2018LFK-7 u-dfn2523-6 3,000 / tape & reel DMP2018LFK-13 u-dfn2523-6 10,000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. 2. diodes inc.'s "green" policy can be f ound on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u-dfn2523-6 bottom view equivalent circuit p8 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) source gate protection diode gate drai n esd protected to 2kv pin 1, 2 = source pin 3 = gate pin 4, 5, 6 = drain p8 ym pin 1
DMP2018LFK document number: ds35357 rev. 5 - 2 2 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain current (note 5) v gs = -4.5v steady state t a = 25 c t a = 70 c i d -9.2 -7.3 a t<5s t a = 25 c t a = 70 c i d -12.8 -10.3 a continuous drain current (note 5) v gs = -2.0v steady state t a = 25 c t a = 70 c i d -7.1 -6 a t<5s t a = 25 c t a = 70 c i d -10 -8.3 a maximum continuous body diode forward current (note 5) i s -3 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -90 a avalanche current (note 6) i as 17 a repetitive avalanche energy (note 6) e as 72 mj thermal characteristics characteristic symbol value units total power dissipation (note 4) t a = 25c p d 1 w t a = 70c 0.63 thermal resistance, junction to ambient (note 4) steady state r ja 126 c/w t<5s 60 total power dissipation (note 5) t a = 25c p d 2.1 w t a = 70c 1.3 thermal resistance, junction to ambient (note 5) steady state r ja 61 c/w t<5s 29 thermal resistance, junction to case r jc 6.4 operating and storage temperature range t j, t stg -55 to 150 c notes: 4. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. notes: 5. device mounted on fr-4 substrate pc board, 2oz copper , with thermal vias to bottom layer 1inch square copper plate
DMP2018LFK document number: ds35357 rev. 5 - 2 3 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -10ma zero gate voltage drain current t j = 25c i dss - - -1 a v ds = -20v, v gs = 0v gate-source leakage i gss - - 2 a v gs = 10v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.45 - -1.2 v v ds = -10v, i d = -200 a static drain-source on-resistance r ds (on) - 10 16 m v gs = -4.5v, i d = -3.6a - 12 20 v gs = -2.5v, i d = -3.6a - 13.6 25 v gs = -2.0v, i d = -1.8a - 20 - v gs = -1.5v, i d = -1a forward transfer admittance |y fs | 10 17 - s v ds = -10v, i d = -3.6a diode forward voltage v sd - 0.7 1.2 v v gs = 0v, i s = -3.6a dynamic characteristics (note 8) input capacitance c iss - 4748 - pf v ds = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 833 - reverse transfer capacitance c rss - 339 - gate resistance r g - 6.2 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -10v) q g - 113 - nc v ds = -16v, i d = -7.2a total gate charge (v gs = -4.5v) q g - 53 - gate-source charge q g s - 7.1 - gate-drain charge q g d - 8.5 - turn-on delay time t d ( on ) - 22.8 - ns v dd = -10v, v gs = -4.5v, r g = 4.7 ? , i d = -3.6a turn-on rise time t r - 29.8 - turn-off delay time t d ( off ) - 240.8 - turn-off fall time t f - 100.6 - notes: 6. uis in production with l = 0.5mh, tj = 25c 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing. 00.511.52 fig. 1 typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -10v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds
DMP2018LFK document number: ds35357 rev. 5 - 2 4 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product 0 0.01 0.02 0.03 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = -10v gs v = -4.5v gs v = -2.5v gs 0 0.01 0.02 0.03 0 5 10 15 20 25 30 -i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = -5v i = -5a gs d v = -10v i = -10a gs d 0 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v = -10v i = -10a gs d v = -5v i = -5a gs d r , d r ain-s o u r c e o n- r esis t an c e ( ) dson 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = -250a d i = -1ma d 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current -v , source-drain voltage (v) sd -i , s o u r c e c u r r e n t (a) s t = 25c a
DMP2018LFK document number: ds35357 rev. 5 - 2 5 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product 0 5 10 15 20 100 1,000 10,000 c , c a p a c i t a n c e (p f ) fig. 9 typical total capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c rss c oss 04 8121620 1 10 100 1,000 -i , leaka g e c u r r en t (na) dss 100,000 10,000 fig. 10 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds t = 25c a t = 85c a t = 125c a t = 150c a 020406080100120 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs v = -16v i = -7.2a ds d 0.1 1 10 100 fig. 12 safe operation area v , drain-source voltage (v) ds 0.01 0.1 1 10 100 i, d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c single pulse j(max) a dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0.001 0.01 0.1 1 10 100 1,000 fig. 13 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 61c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
DMP2018LFK document number: ds35357 rev. 5 - 2 6 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product package outline dimensions suggested pad layout u-dfn2523-6 dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.02 a3 ? ? 0.152 b 0.25 0.35 0.30 d 2.45 2.55 2.50 d1 1.55 1.65 1.60 e ? ? 0.65 e 2.25 2.35 2.30 e1 1.18 1.28 1.23 l 0.30 0.40 0.35 l1 0.30 0.40 0.35 all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 1.700 y 0.650 y1 0.450 y2 1.830 y3 2.700 a a1 a3 d e l (3x) e1 d1 b (6x) l1 (2x) e pin #1 id r0.150 x1 y1 x y3 y2 y c
DMP2018LFK document number: ds35357 rev. 5 - 2 7 of 7 www.diodes.com march 2012 ? diodes incorporated DMP2018LFK advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com


▲Up To Search▲   

 
Price & Availability of DMP2018LFK

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X