HN1C01FE 2004-06-17 1 toshiba transistor silicon npn epitaxial type (pct process) HN1C01FE audio frequency general purpose amplifier applications small package (dual type) high voltage and high current : v ceo = 50v, i c = 150ma (max) high h fe : h fe = 120~400 excellent h fe linearity : h fe (i c = 0.1ma) / h fe (i c = 2ma) = 0.95 (typ.) maximum ratings (ta = 25 c) (q1, q2 common) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c * 100 mw junction temperature t j 150 c storage temperature range t stg ? 55~150 c * total rating electrical characteristics (ta = 25 c) (q1,q2 common) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = 60v, i e = 0 D D 0.1 a emitter cut-off current i ebo D v eb = 5v, i c = 0 D D 0.1 a dc current gain h fe (note) D v ce = 6v, i c = 2ma 120 D 400 collector-emitter saturation voltage v ce (sat) D i c = 100ma, i b = 10ma D 0.1 0.25 v transition frequency f t D v ce = 10v, i c = 1ma 80 D D mhz collector output capacitance c ob D v cb = 10v, i e = 0, f = 1mhz D 2 D pf note: h fe classification y (y): 120~240, gr (g): 200~400 ( ) marking symbol marking equivalent circuit (top view) jedec D jeita D toshiba 2-2n1g weight: 3.0mg(typ.) unit: mm 1 2 3 4 5 6 c1 type name h fe rank 1 2 3 4 5 6 q1 q2
HN1C01FE 2004-06-17 2 (q1,q2 common) ambient temperature ta ( c) p c * ? ta collector power dissipation p c (mw) 200 0 175 125 100 50 150 75 25 150 0 50 100 *:total rating
HN1C01FE 2004-06-17 3 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fa il due to their inherent electrical se nsitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utiliz ing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunct ion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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