feb.1999 to-220fn 15 0.3 14 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 123 q gate w drain e source e w q e v v a a a a a w c c v g 100 20 10 40 10 10 40 20 C55 ~ +150 C55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 100 m h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v dss v gss i d i dm i da i s i sm p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit FS10KM-2 outline drawing dimensions in mm mitsubishi nch power mosfet FS10KM-2 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 10v drive v dss ................................................................................ 100v r ds (on) (max) .............................................................. 0.23 w i d ......................................................................................... 10a integrated fast recovery diode (typ.) ........... 100ns v iso ................................................................................ 2000v
feb.1999 mitsubishi nch power mosfet FS10KM-2 high-speed switching use 0 8 16 24 32 40 0 200 50 100 150 power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 210 0 357 2 10 1 357 2 10 2 357 2 10 ? 10 0 10 1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 tw = 10 m s t c = 25? single pulse 100 m s 10ms 1ms dc 0 4 8 12 16 20 0 1.0 2.0 3.0 4.0 5.0 p d = 20w t c = 25? pulse test v gs = 20v 10v 7v 5v 6v 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 t c = 25? pulse test v gs = 20v 10v 7v 6v 5v performance curves electrical characteristics (tch = 25 c) v (br) dss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr v m a ma v w v s pf pf pf ns ns ns ns v c/w ns 100 2.0 3.0 0.16 0.80 9.0 600 125 40 18 20 30 18 1.0 100 0.1 0.1 4.0 0.23 1.15 1.5 6.25 drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 100v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 5v v ds = 10v, v gs = 0v, f = 1mhz v dd = 50v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, dis/dt = C100a/ m s
feb.1999 mitsubishi nch power mosfet FS10KM-2 high-speed switching use 0 4 8 12 16 20 0 4 8 12 16 20 t c = 25? v ds = 10v pulse test on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25? v ds = 5v pulse test 75? 125? 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 3 2 tch = 25? f = 1mh z v gs = 0v ciss coss crss 0 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 5a t c = 25? pulse test 10a i d = 15a 0 0.1 0.2 0.3 0.4 0.5 10 ? 210 0 357 2 10 1 357 2 10 2 357 v gs = 10v 20v t c = 25? pulse test 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 tch = 25? v dd = 50v v gs = 10v r gen = r gs = 50 w t d(off) t d(on) t f t r
feb.1999 mitsubishi nch power mosfet FS10KM-2 high-speed switching use gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 0 4 8 12 16 20 0 4 8 12 16 20 v ds = 80v tch = 25? i d = 10a 50v 20v 0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0 v gs = 0v pulse test t c = 125? 75? 25? 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
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