BYG24D thru byg24j vishay general semiconductor document number: 88960 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 fast avalanche smd rectifier features ? low profile package ? ideal for automated placement ? glass passivated junction ? low reverse current ? soft recovery characteristics ? fast reverse recovery time ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 200 v to 600 v i fsm 30 a i r 1.0 a v f 1.25 v t rr 140 ns e r 20 mj t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol BYG24D byg24g byg24j unit device marking code BYG24D byg24g byg24j maximum repetitive peak reverse voltage v rrm 200 400 600 v average forward current t a = 65 c i f(av) 1.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 25 c e r 20 mj operating junction and storage temperature range t j , t stg - 55 to + 150 c www.datasheet.co.kr datasheet pdf - http://www..net/
BYG24D thru byg24j vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88960 revision: 11-apr-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle notes: (1) mounted on epoxy-glass hard tissue 35 m x 17 mm 2 cooper area per electrode (2) mounted on epoxy-glass hard tissue 35 m x 50 mm 2 cooper area per electrode note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol BYG24D byg24g byg24j unit minimum breakdown voltage i r = 100 a v br 200 400 600 v maximum instantaneous forward voltage (1) i f = 1 a i f = 1.5 a t j = 25 c v f 1.15 1.25 v maximum reverse current v r = v rrm t j = 25 c t j = 100 c i r 1 10 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 140 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol BYG24D byg24g byg24j unit junction case r thjc 25 c/w maximum thermal resistance, junction to ambient r ja 150 (1) 125 (2) c/w ordering information (example) preferred p/n unit weight (g) package code base quantity delivery mode BYG24D-e3/tr 0.064 tr 1800 7" diameter plastic tape and reel BYG24D-e3/tr3 0.064 tr3 7500 13" diameter plastic tape and reel BYG24Dhe3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel BYG24Dhe3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel figure 1. max. reverse power dissipation vs. junction temperature 0 10 20 30 40 50 60 25 50 75 100 125 150 re v erse po w er dissipation (m w ) j u nction temperat u re (c) v r = v rrm p r - limit at 100 % v r p r - limit at 8 0 % v r 125 k/ w 155 k/ w 175 k/ w r ja = figure 2. reverse current vs. junction temperature 1 10 100 25 50 75 100 125 150 re v erse c u rrent ( a) j u nction temperat u re ( c) v r = v rrm www.datasheet.co.kr datasheet pdf - http://www..net/
BYG24D thru byg24j vishay general semiconductor document number: 88960 revision: 11-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. forward current vs. forward voltage figure 4. average forward current vs. ambient temperature 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 3.0 for w ard v oltage ( v ) for w ard c u rrent (a) t j = 150 c t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 am b ient temperat u re (c) a v erage for w ard c u rrent (a) 100 8 0 60 40 20 0 120 140 160 v r = v rrm half sine- w a v e r ja = 25 k/ w r ja = 125 k/ w r ja = 150 k/ w figure 5. diode capacitance vs. reverse voltage 0 5 10 15 20 25 30 0.1 1 10 100 re v erse v oltage ( v ) diode capacitance (pf) f = 1 mhz 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n . www.datasheet.co.kr datasheet pdf - http://www..net/
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