View TEXASINSTRUMENTSINC-TISPPBL2SDR_6838405.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessary include testing of all parameters. overvoltage protection for ericsson components line interface circuits tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics copyright ? 1999 texas instruments limited 1 august 1999 designed and manufactured by power innovations, bedford, uk. under private label for texas instruments. l overvoltage protector? for:- pbl 3762a pbl 3764a/4, pbl 3764a/6 pbl 3766, pbl 3766/6 pbl 3767, pbl 3767/6 pbl 3796, pbl 3796/2 pbl 3798, pbl 3798/2 pbl 3798/5 pbl 3798/6 pbl 3799 pbl 3860a/1, pbl 3860a/6 pbl 386 10/2 pbl 386 11/2 pbl 386 20/1 pbl 386 21/1 pbl 386 30/1 pbl 386 40/1 pbl 386 50/1 pbl 3898/m l rated for international surge wave shapes l single-lead line connection version of feed-through tisppbl2d - ground lead creepage distance . . > 3 mm wave shape standard i tsp a 2/10 s gr-1089-core 100 1.2/50 s itu-t k22 100 0.5/700 s i3124 40 10/700 s itu-t k20, k21 40 10/1000 s gr-1089-core 30 l small outline surface mount package - available ordering options carrier order # tube tisppbl2sd taped and reeled tisppbl2sdr description the tisppbl2s is a dual forward-conducting buffered p-gate overvoltage protector. it is designed to protect the ericsson components pbl 3xxx family of slics (subscriber line interface circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. the tisppbl2s limits voltages that exceed the slic supply rail levels. the slic line driver section is typically powered from 0 v (ground) and a negative voltage in the region of -10 v to -85 v. the protector gate is connected to this negative supply. this references the protection (clipping) voltage to the negative supply voltage. as the protection voltage will track the negative supply voltage the overvoltage stress on the slic is minimised. positive overvoltages are clipped to ground by diode forward conduction. negative overvoltages are initially clipped close to the slic negative supply rail value. if sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced on-state condition. as the overvoltage ? customers are advised to obtain the latest version of the relevant ericsson components slic information to verify, before pla cing orders, that the information bein g relied on is current. device symbol k1 k2 a a g1,g2 terminals k1, k2 and a correspond to the alternative line designators of t, r and g or a, b and c. the negative protection voltage is controlled by the voltage, v gg, applied to the g terminal. sd6xap md6xba d package (top view) nc - no internal connection terminal typical application names shown in parenthesis 1 2 3 4 5 6 7 8 a a g k1 k2 nc (ground) (ground) (gate) (tip) (ring) nc nc
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 2 august 1999 subsides the high holding current of the crowbar prevents d.c. latchup. the tisppbl2s buffered gate design reduces the loading on the slic supply during overvoltages caused by power cross and induction. these monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. the tisppbl2s is the tisppbl2d with a different pinout. the feed-through ring (leads 4 5) and tip (leads 1 8) connections have been replaced by single ring (lead 4) and tip (lead 1) connections. this increases package creepage distance of the biased to ground connections from about 0.7 mm to over 3 mm. notes: 1. initially the protector must be in thermal equilibrium with -40 c t j 85 c. the surge may be repeated after the device returns to its initial conditions. 2. these non-repetitive rated currents are peak values for either polarirty. the rated current values may be applied either to t he ring to ground or to the tip to ground terminal pairs. additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the ground terminal current will be twice the rated current value of an individual terminal pair). above 85 c, derate linearly to zero at 150 c lead temperature. absolute maximum ratings rating symbol value unit repetitive peak off-state voltage, i g = 0, -40c t j 85c v drm -100 v repetitive peak gate-cathode voltage, v ka = 0, -40c t j 85c v gkrm -90 v non-repetitive peak on-state pulse current (see notes 1 and 2) i tsp a 10/1000 s (bellcore gr-1089-core, issue 1, november 1994, section 4) 30 0.2/310 s (i3124, open-circuit voltage wave shape 0.5/700 s) 5/310 s (itu-t k20 & k21, open-circuit voltage wave shape 10/700 s) 1/20 s (itu-t k22, open-circuit voltage wave shape 1.2/50 s) 40 40 100 2/10 s (bellcore gr-1089-core, issue 1, november 1994, section 4) 100 non-repetitive peak on-state current, 50/60 hz (see notes 1 and 2) i tsm a 100 ms 11 1s 5s 300 s 900 s 4.5 2.4 0.95 0.93 non-repetitive peak gate current, 1/2 s pulse, cathodes commoned (see note 1) i gsm 40 a operating free-air temperature range t a -40 to +85 c junction temperature t j -40 to +150 c storage temperature range t stg -40 to +150 c recommended operating conditions min typ max unit c g gate decoupling capacitor 100 220 nf r 1 tisppbl2s series resistor for gr-1089-core first-level and second-level surge survival tisppbl2s series resistor for gr-1089-core first-level surge survival tisppbl2s series resistor for itu-t recommendation k20/21 40 25 10 w electrical characteristics, t amb = 25 c (unless otherwise noted) parameter test conditions min typ max unit i d off-state current v d =v drm , v gk =0 t j = -40 c -5 a t j = 85 c -50 a
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 3 august 1999 v (bo) breakover voltage i t = -20 a, 0.5/700 generator, figure 3 test circuit (see note 3 and figure 2) -70 v t (br) breakdown time i t = -20 a, 0.5/700 generator, figure 3 test cir- cuit (see note 3 and figure 2) v (br) < -50 v 1 s v f forward voltage i f = 5 a, t w = 500 s 3v v frm peak forward recovery voltage i f = 20 a, 0.5/700 generator, figure 3 test circuit (see note 4 and fig- ure 2) 8v t fr forward recovery time i f = 20 a, 0.5/700 generator, figure 3 test cir- cuit (see note 4 and figure 2) v f > 5 v v f > 1 v 1 10000 s i h holding current i t = -1 a, di/dt = 1a/ms, v gg =-50v, -40c t j 85 c -150 ma i gas gate reverse current v gg =v gkrm , v ak =0 t j = -40 c -5 a t j = 85 c -50 a i gat gate reverse current, on state i t =-0.5a, t w = 500 s, v gg =-50v -1 ma i gaf gate reverse current, forward conducting state i f = 1 a, t w = 500 s, v gg = -50 v -10 ma i gt gate trigger current i t =-5a, t p(g) 3 20 s, v gg =-50v 5 ma v gt gate trigger voltage i t =-5a, t p(g) 3 20 s, v gg =-50v 2.5 v c ak anode-cathode off- state capacitance f=1mhz, v d =1v, i g = 0, (see note 5) v d = -3 v 110 pf v d =-50v 60 pf notes: 3. for the required tipx and ringx terminal negative pulse performance refer to the respective ericsson components slic da ta sheet. the pbl 379x family of slics has ratings of -120 v for 0.25 s, -90 v for 1 s, -70 v for 10 ms and -70 v for d.c. the pbl 376x family together with the pbl 3860a slic have the same maximum ratings when the applied battery voltage is -50 v. as the flexi-slic? pbl 386 xx family is specified in terms of current pulses, a minimum value of 2 w for r p should be used. compliance to these conditions is guaranteed by the maximum breakover voltage and the breakdown times of the tisppbl2s. 4. for the required tipx and ringx terminal positive pulse performance refer to the respective ericsson components slic data sheet. the pbl 379x family of slics has ratings of 15 v for 0.25 s, 10 v for 1 s, 5 v for 10 ms and 1 v for d.c. the pbl 376x family together with the pbl 3860a slic have similar ratings. as the flexi-slic? pbl 386 xx family is specified in terms of current pulses, a minimum value of 2 w for r p should be used. compliance to these conditions is guaranteed by the peak forward recovery voltage and the forward recovery times of the tisppbl2s 5. these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the unmeasured device terminals are a.c. connected to the guard terminal of the bridge. thermal characteristics parameter test conditions min typ max unit r q ja junction to free air thermal resistance p tot =0.8w, t a =25c 5cm 2 , fr4 pcb d package 160 c/w electrical characteristics, t amb = 25 c (unless otherwise noted) (continued) parameter test conditions min typ max unit
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 4 august 1999 parameter measurement information figure 1. principal terminal and gate transfer characteristics figure 2. transient limits for tisppbl2s limiting voltage pm6xaia -v i s v s v gg v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i forward conduction characteristic +v +i i f v f i fsm (= |i tsm |) i fsp (= |i tsp |) -i quadrant iii switching characteristic v gk(bo) principal terminal v-i characteristic i gt i gat i gaf i f +i k -i k i t -i g +i g gate transfer characteristic i k i g protector maximum limiting voltage vs time 0 5 10 1 s v bat = -50 v -50 -60 -70 -80 10 ms 1 s voltage - v time pm6xal max v frm = 8 v max v (bo) = -70 v
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 5 august 1999 figure 3. test circuit for measurement of limiting voltage figure 4. current wavefront figure 5. current wavefront di/dt r1 50 w w w w hi v gg -50 v (v bat ) ai6xbas 15 w w w w i g th4 th5 20 nf 20 f 25 w w w w impulse current i t , i f limiting voltage v k , v f 1960 v s1 lo dut (tisppbl2s) 220 nf r1 = one section of a pbr 530 01/1 lpc line resistor network ecat with e502 0.5/700 surge network e502 0.5/700 wavefront current vs time time - s 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i - wavefront current - a 0 5 10 15 20 ai6xay e502 0.5/700 wavefront di/dt vs time time - s 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 di/dt - rate of rise of wavefront current - a/s 0 10 20 30 40 50 60 70 80 ai6xaz
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 6 august 1999 thermal information figure 6. peak non-recurring a.c. vs current duration t - current duration - s 01 1 10 100 1000 i tsm - peak non-recurrent 50 hz current - a 1 10 ti6laca v g = -48 v, t amb = 85c r gen = 70 to 950 w w w w v gen = 600 vrms ring and tip connections - equal i tsm values were applied to both ground connection - current is twice i tsm value
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 7 august 1999 typical characteristics figure 7. figure 8. figure 9. figure 10. distribution limits of thyristor limiting voltage vs time time - s 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v k - cathode voltage - v -70 -60 -50 -40 -30 -20 -10 0 ai6xaw 50 devices tested from 10 wafer lots 0.5/700 waveform i t = -20 a t a = 25c v gg = -50 v distribution limits of diode forward voltage vs time time - s 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v f - forward voltage - v 0 1 2 3 4 5 6 ai6xax 50 devices tested from 10 wafer lots 0.5/700 waveform i f = 20 a t a = 25c v gg = -50 v cumulative population % vs peak limiting voltage peak limiting voltage - v 456789 15 10 cumulative population - % 0001 001 01 1 10 30 50 70 90 99 999 9999 99999 tc6xab 50 devices tested from 10 wafer lots i f = 20 a, i t = -20 a, 0.5/700 waveform t a = 25c, v gg = -50 v thyristor v gg - v (bo) diode v frm tc61ad diode forward current vs forward voltage v f - forward voltage - v 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i f - forward current - a 0.02 0.04 0.07 0.2 0.4 0.7 0.01 0.1 1 -40c 25c 85c
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 8 august 1999 applications information operation of gated protectors figure 13 and figure 14 show how the tisppbl2s limits overvoltages. the tisppbl2s thyristor sections limit negative overvoltages and the diode sections limit positive overvoltages. negative overvoltages (figure 13) are initially clipped close to the slic negative supply rail value (v bat ) by the conduction of the transistor base-emitter and the thyristor gate-cathode junctions. if sufficient current is figure 11. figure 12. figure 13. negative overvoltage condition figure 14. positive overvoltage condition cumulative population % vs limiting time t (br) , t fr - breakdown and forward recovery times - s 0.001 0.01 0.1 1 cumulative population - % 0001 001 01 1 10 30 50 70 90 99 999 9999 99999 tc6xac 50 devices tested from 10 wafer lots i f = 20 a, i t = -20 a, 0.5/700 waveform t a = 25c, v gg = -50 v thyristor t (br) for v (br) < v gg diode t fr for v f > 5 v outliers (2) @ 0 s 0.004 0.04 0.4 normalised peak limiting voltages vs junction temperature t j - junction temperature - c -40-30-20-10 0 1020304050607080 gg 0.90 0.95 1.00 1.05 1.10 tc6xaa normalised to 25c values of v (bo) and v frm i f = 20 a, i t = -20 a 0.5/700 waveform v gg = -50 v thyristor v (bo) diode v frm c1 i g th5 slic slic protector tisp pbl2s i k ai6xans v gg c2 d1 v bat th5 slic slic protector tisp pbl2s i f ai6xaos c1 v gg c2 d1 v bat
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 9 august 1999 available from the overvoltage, then the thyristor will crowbar into a low voltage ground referenced on-state condition. as the overvoltage subsides the high holding current of the crowbar thyristor prevents d.c. latchup. the negative protection voltage will be the sum of the gate supply (v bat ) and the peak gate(terminal)-cathode voltage (v gk(bo) ). under a.c. overvoltage conditions v gk(bo) will be less than 3 v. the integrated transistor buffer in the tisppbl2s greatly reduces protectors source and sink current loading on the v bat supply. without the transistor, the thyristor gate current would charge the v bat supply. an electronic power supply is not usually designed to be charged like a battery. as a result, the electronic supply would switch off and the thyristor gate current would provide the slic supply current. normally the slic current would be less than the gate current, which would cause the supply voltage to increase and destroy the slic by a supply overvoltage. the integrated transistor buffer removes this problem. fast rising impulses will cause short term overshoots in gate-cathode voltage. the negative protection voltage under impulse conditions will also be increased if there is a long connection between the gate decoupling capacitor, c1, and the gate terminal. during the initial rise of a fast impulse, the gate current (i g ) is the same as the cathode current (i k ). rates of 60 a/s can cause inductive voltages of 0.6 v in 2.5 cm of printed wiring track. to minimise this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimised. inductive voltages in the protector cathode wiring can increase the protection voltage. these voltages can be minimised by routing the slic connection via the protector as shown in figure 13 and figure 14. positive overvoltages (figure 14) are clipped to ground by forward conduction of the diode section in the tisppbl2s. fast rising impulses will cause short term overshoots in forward voltage (v frm ). tisppbl2s limiting voltages this clause details the tisppbl2s voltage limiting levels under impulse conditions. test circuit figure 3 shows the basic test circuit used for the measurement of impulse limiting voltage. during the impulse, the high levels of electrical energy and rapid rates of change cause electrical noise to be induced or conducted into the measurement system. it is possible for the electrical noise voltage to be many times the wanted signal voltage. elaborate wiring and measurement techniques where used to reduce the noise voltage to less than 2 v peak to peak. impulse generator a keytek ecat e-class series 100 with an e502 surge network was used for testing. the e502 produces a 0.5/700 voltage impulse. this particular waveform was used as it has the fastest rate of current rise (di/dt) of the commonly used lightning surge waveforms. this maximises the measured limiting voltage. figure 4 shows the current wavefront through the dut. to produce a peak test current level of 20 a, the e502 charging voltage was set to 1960 v. figure 5 shows the dut current di/dt. initially the wavefront current rises at 60 a/s, this rate then reduces as the peak current is approached. at the tisppbl2s v (bo) condition the di/dt is about 50 a/s. limiting voltage levels fifty devices were measured in the test circuit of figure 3. the 50 devices were made up from groups of 5 devices taken from 10 separately processed device lots. figure 7 shows the total waveform variation of the thyristor limiting voltage across the 50 devices. this shows that the largest peak limiting voltage (breakover voltage, v (bo) ) is -62 v, a 12 v overshoot beyond the -50 v gate reference supply, v gg . the limiting voltage exceeds the gate reference supply voltage level for a period (t (br) ) of about 0.4 s.
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 10 august 1999 figure 9 and figure 11 show these two waveform parameters in terms of device population. in figure 9, the limiting voltage is shown in terms of the overshoot beyond the gate reference supply (v gg - v (bo) ). removing the gate reference voltage level magnifies the thyristor limiting voltage variation and shows the data stratification caused by the oscilloscope digitisation. extrapolating the data trend indicates that the overshoot is less than 14 v at the 99.997% level (equal to 30 ppm of the population exceeding 14 v, equivalent to +4 sigma point of a normal distribution). in figure 11, extrapolating the thyristor data trend to the 99.997% level indicates a maximum breakdown time, t (br) , of 0.5 s. figure 12 shows that increasing the temperature up to 85c increases the thyristor peak limiting voltage by 2.4%, giving a maximum 85c peak limiting voltage of 1.024x(-50-14) = -65.5. over the -40c to 85c temperature range the tisppbl2s is specified to have a maximum v (bo) value of -70 v and a breakdown time, t (br) , of 1 s. figure 8 shows the total waveform variation of the diode limiting voltage across the 50 devices. the peak limiting voltage (peak forward recovery voltage v frm ) is less than 6 v, and this value includes the 2 v of magnetically induced noise in the probe. figure 9 shows that extrapolated 99.997% level is about 5.5 v. in figure 11, extrapolating the diode data trend to the 99.997% level indicates a maximum forward recovery time, t fr , of 0.1 s. figure 12 indicates that there is about a 10% uplift by increasing the temperature to 85c. this gives a maximum 85c peak limiting voltage of 1.1x(5.5) = 6.1 v. over the -40c to 85c temperature range, the tisppbl2s is specified to have a maximum v frm value of 8 v and a maximum forward recovery time of 1 s. diodes do not switch to a much lower voltage like thyristors, so the diode limiting voltage applies for the whole impulse duration. forward voltages of 1 v or less are normally considered safe. figure 10 shows that the lowest current 1 v condition occurs at -40c with a current of 0.3 a. when the tisppbl2s is tested with the rated 10/1000 impulse it would take about 8 ms for the current to decay from 30 a to 0.3 a. over the -40c to 85c temperature range, the tisppbl2s is specified to have a v f below 1 v within 10 ms. slic protection requirements this clause discusses the various requirements of the ericsson components slics detailed on the first page of this data sheet and compares these to the tisppbl2s protector parameters. some slics are rated for 0c to 70c operation, others for -40c to 85c operation. the tisppbl2s protector is specified for -40c to 85c operation and so covers both temperature ranges. normal operation depending on the slic type, the maximum slic supply voltage rating (v bat ) will be -70 v, -80 v or -85 v. the -85v rating of the tisppbl2s gate-cathode (v gkrm ) matches the highest slic voltage rating. to restore normal operation after the tisppbl2s has switched on, the minimum switch-off current (holding current i h ) needed is equal to the maximum slic short circuit current to ground (d.c. line current together with the maximum longitudinal current). for the slics listed on the first page of this data sheet, the tisppbl2s minimum holding current of 140 ma will ensure switch-off after an overvoltage. overvoltage protection ericsson components specify slic withstand capability as a series of stress-time values. figure 15 shows the voltage withstand limits of the pbl 3762a slic. in the positive polarity, the pbl 3762a ring or tip voltage must not exceed +15 v. for 250 ns, the pbl 3762a will be able to withstand a voltage between +10 v and +15 v. for 1 s, the pbl 3796 will be able to withstand a voltage between +5 v and +10 v. for 10 ms, the pbl 3796 will be able to withstand a voltage between +2 v and +5 v. to protect against positive overvoltage, the tisppbl2s positive limiting voltage must be equal to or less than these voltage values during the specified time periods.
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 11 august 1999 in the negative polarity, the pbl 3762a ring or tip voltage must not exceed v bat - 70. continuously the pbl 3762a can withstand a v bat of -70 v and this implies a maximum peak voltage of -140 v. figure 15 is drawn for a v bat of -50 v and so that the peak voltage becomes -120 v. for 250 ns, the pbl 3762a will be able to withstand a voltage between v bat -40v and v bat -70v or -90v and -120 v in this case. for 1 s, the pbl 3796 will be able to withstand a voltage between v bat -20v and v bat -40 v or -70 v and -90 v in this case. for 10 ms, the pbl 3796 will be able to withstand a voltage between v bat and v bat -20 v or -50 v and -70 v in this case. by adding a series feed diode in the battery feed the d.c. and 10 ms voltage withstands increase to -70 v, independent of the actual v bat value.to protect against negative overvoltage, the tisppbl2s negative limiting voltage must be equal to or less than these voltage values during the specified time periods. the following table lists the protection requirements of three selections from different slic families. two, the pbl 3796 and the pbl 3762a, specify voltage withstand. the pbl 3796 specifies the negative voltages in absolute terms and the pbl 3762a specifies the negative voltages in terms of voltage relative to the battery supply voltage, v bat . tertiary protection is incorporated in the pbl 386 20/1 slic and the withstand is specified in terms of current into this protection. this type of slic also has more time periods specified for the current withstand values. to co-ordinate the slic external secondary protection (tisppbl2s) and the internal tertiary protection, a series resistor, r p , is required between the two. the tertiary protection will develop about 1 v and the withstand current through resistor r p will also develop a voltage. the sum of these voltages will determine the required limiting voltage level of the tisppbl2s. a suitable value for r p is 2 w . the negative limiting voltage of the tisppbl2s is defined as a 1 s, -20 v pulse below the battery voltage (figure 2). this value does not exceed any of the voltage withstand levels listed in the slic withstand table. in the positive polarity the tispbl2s limits the maximum voltage to 8 v in a 1 s period and between 1 v and 5 v for a 10 ms period. these values do not exceed the values listed in the slic withstand table. figure 15. transient limits for pbl 3762a withstand voltage 10 ms 1 s 0.25 s pbl 3762a slic ring and tip voltage withstand vs time 0 5 10 15 voltages (with v bat set to -50 v) - v time 0.25 s 1 s 10 ms -120 -110 -100 -90 -80 -70 -60 -50 d.c. and 10 ms pulse rating increased to -70 v (independent of v bat value) by use of series battery feed diode v bat - 40 v v bat - 70 v v bat - 20 v v bat ai6xbc
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 12 august 1999 a graphical representation is shown in figure 16. in the positive polarity, the three line types correspond to the three slic types discussed (r p is 2 w for the pbl 386 20/1). the two shaded areas represent the positive and negative maximum limiting voltage levels of the tisppbl2s as per figure 2. the negative voltage withstand capability of the three slics is shown relative to their maximum rated battery supply voltage, v batm . figure 16 shows that the tisppbl2s maximum limiting voltage levels do not exceed the slic voltage withstand ratings. application circuit figure 17 shows a typical tisppbl2s slic card protection circuit. the incoming line conductors, r and t, connect to the relay matrix via the series over-current protection. fusible resistors, fuses and positive temperature coefficient (ptc) resistors can be used for over-current protection. resistors will reduce the prospective current from the surge generator for both the tisppbl2s and the ring/test protector. the tisp7xxxf3 protector has the same protection voltage for any terminal pair. this protector is used when the ring generator configuration may be ground or battery-backed. for dedicated ground-backed ringing generators, the tisp3xxxf3 gives better protection as its inter-conductor protection voltage is twice the conductor to ground value. relay contacts 3a and 3b connect the line conductors to the slic via the tisppbl2s protector. closing contacts 3a and 3b connects the tisppbl2s protector in parallel with the ring/test protector. as the ring/test protector requires much higher voltages than the tisppbl2s to operate, it will only operate when the contacts 3a and 3b are open. both protectors will divert the same levels of peak surge current and their slic withstand comparison slic pbl 3796 pbl 3762a pbl 386 20/1 condition v v v v a a continuous -70 note 1 +1 note 1 v bat (-70 v) note 3 +2 -0.1 note 6 +0.1 pulse < 10 ms -70 note 1 +5 note 1 v bat - 20 note 3 +5 -2 note 5 +2 note 5 pulse < 1 ms -5 note 5 +5 note 5 pulse < 10 s -15 note 5 +15 note 5 pulse < 1 s -90 note 1 +10 note 1 v bat - 40 note 3 +10 -20 note 5 +20 note 5 pulse < 250 ns -120 note 1, 2 +15 note 1, 2 v bat - 70 note 4 +15 -20 note 5 +20 note 5 notes: 1. these voltage rating require a diode to be installed in series with the v bat pin. 2. r f1 , r f2 3 20 w is also required. pulse supplied to tip and ring outside r f1 , r f2 3. a diode in series with the v bat input increases the permitted continuous voltage and pulse < 10 ms to -70 v. a pulse 1 s is increased to the greater of |-70 v| or |v bat - 40 v| 4. r f1 , r f2 3 20 w is also required. pulse supplied to tip and ring outside r f1 , r f2 5. pulse is applied to tip and ring outside r p1 and r p2 6. permitted continuous voltage for v bat is -75 v
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 13 august 1999 required current ratings should be similar. the tisppbl2s protector gate reference voltage comes from the slic negative supply (v bat ). a 220 nf gate capacitor sources the high gate current pulses caused by fast rising impulses. when the slic has internal tertiary protection (e.g. pbl 386 21/1), then the two r p resistors need to be added for protection co-ordination. figure 16. slic voltage withstand and tisppbl2s protection levels figure 17. typical application circuit time 10 ms 1 ms 10 s 1 s pbl 3xxx slic voltage withstand and tisppbl2s voltage limiting vs time 0 10 20 30 40 ai6xbds voltage - v v batm - 70 v batm - 60 v batm - 50 v batm - 40 v batm - 30 v batm - 20 v batm - 10 v batm pbl 3762a pbl 386 20/1 pbl 3796 0.25 s pbl 386 20/1 pbl 3762a pbl 3796 tisppbl2s tisppbl2s test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th1 th2 th3 th4 th5 pbl 3xxx slic slic protection ring/test protection over- current protection s2a s2b tisp pbl2s tisp 3xxxf3 or 7xxxf3 s3a s3b v bat c1 220 nf ai6xaps r p is used when the slic has tertiary protection r p r p
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 14 august 1999 mechanical data d008 plastic small-outline package this small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. 5,21 (0.205) 4,60 (0.181) notes: a. leads are within 0,25 (0.010) radius of true position at maximum material condition. b. body dimensions do not include mold flash or protrusion. c. mold flash or protrusion shall not exceed 0,15 (0.006). d. lead tips to be planar within 0,051 (0.002). 1,75 (0.069) 1,35 (0.053) 6,20 (0.244) 5,80 (0.228) 5,00 (0.197) 4,80 (0.189) d008 8 765 4 3 2 1 4,00 (0.157) 3,81 (0.150) 7 nom 3 places 7 nom 4 places 0,51 (0.020) 0,36 (0.014) 8 places pin spacing 1,27 (0.050) (see note a) 6 places 1,12 (0.044) 0,51 (0.020) 4 4 0,79 (0.031) 0,28 (0.011) 0,203 (0.008) 0,102 (0.004) all linear dimensions are in millimeters and parenthetically in inches designation per jedec std 30: pdso-g8 0,50 (0.020) 0,25 (0.010) x 45nom 0,229 (0.0090) 0,190 (0.0075) mdxxaa
tisppbl2sd programmable overvoltage protectors for ericsson components pbl 3xxx slics 15 august 1999 important notice texas instruments (ti) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placin g orders, that the information being relied on is current. ti warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with ti's standard warranty. testing and other quality control techniques are utilized to the extent ti deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except thos e mandated by government requirements. certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (critical applications). ti semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. inclusion of ti products in such applications is understood to be fully at the risk of the customer. use of ti products in such applications requires the written approval of an appropriate ti officer. questions concerning potential risk applications shoul d be directed to ti through a local sc sales office. in order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. ti assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor does ti warrant or represent that any license, either express or implied, is granted under an y patent right, copyright, mask work right, or other intellectual property right of ti covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. copyright ? 1999, texas instruments incorporated

▲Up To Search▲

Price & Availability of TEXASINSTRUMENTSINC-TISPPBL2SDR

	To Download TEXASINSTRUMENTSINC-TISPPBL2SDR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .