3.1 - 65 3.1 50v and 60v ultra low r ds(on) power mosfets in to-257 and to-254 isolated packages 4 11 r1 supersedes 3 02 r0 low voltage, low r ds(on) power mosfets in hermetic isolated package features ? isolated hermetic metal packages ? ultra low r ds(on) ? low conductive loss/low gate charge ? available screened to mil-s-19500, tx, txv and s levels ? ceramic feedthroughs available description this series of hermetic packaged mosfets are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. the low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry. maximum ratings (per device) om50n06st om50n05st om60n05sa om50n05sa om60n06sa om50n06sa part no. v ds (v) r ds(on) () i d (a) package om60n06sa 60 .025 60 to-254aa om50n06sa 60 .030 50 to-254aa om50n06st 60 .035 50 to-257aa om60n05sa 50 .025 60 to-254aa om50n05sa 50 .030 50 to-254aa om50n05st 50 .035 50 to-257aa schematic t-3 pin connection m-pak pin connection drain source gate 123 123 pin 1: drain pin 2: source pin 3: gate pin 1: drain pin 2: source pin 3: gate
3.1 - 66 om60n06sa - om50n05st 3.1 absolute maximum ratings (t c = 25c unless otherwise noted) 50n06st 50n05st parameter 60n06sa 50n05sa 60n05sa 50n05sa units v ds drain-source voltage 60 60 50 50 v v dgr drain-gate voltage (r gs = 1 m ) 60 60 50 50 v i d @ t c = 25c continuous drain current 2 55 50 55 50 a i d @ t c = 100c continuous drain current 2 37 33 37 33 a i dm pulsed drain current 1 220 200 220 200 a p d @ t c = 25c maximum power dissipation 100 100 100 100 w p d @ t c = 100c maximum power dissipation 40 40 40 40 w junction-to-case linear derating factor 1 .80 .80 .80 .80 w/c t j operating and t stg storage temperature range -55 to 150 -55 to 150 -55 to 150 -55 to 150 c lead temperature (1/16" from case for 10 secs.) 300 300 300 300 c 1 pulse test: pulse width 300 sec. duty cycle 1.5%. 2 package limited sa i d = 25 a, sc sc i d = 35 a @ 25 c thermal resistance r thjc junction-to-case 1.25 c/w package limitations parameters to254aa to-257aa unit i d continuous drain current 25 15 a linear derating factor, junction-to-ambient .020 .015 w/c r thja thermal resistance, junction-to-ambient (free air operation) 50 65 c/w linear derating, junction-to-case 0.8 0.8 w/c .144 dia. .050 .040 .260 .249 .685 .665 .800 .790 .545 .535 .550 .510 .045 .035 .550 .530 .150 typ. .150 typ. .005 .430 .410 .200 .190 .038 max. .005 .120 typ. .537 .527 .665 .645 .420 .410 .150 .140 .750 .500 .100 typ. .035 .025 .045 .035 t-3 mechanical outline m-pak mechanical outline package options mod pak z-tab 6 pin sip notes: ? standard products are supplied with glass feedthroughs. for ceramic feedthroughs, add the letter c to the part number. example - omxxxxcsa. ? mosfets are also available in z-pak, dual and quad pak styles. please call the factory for more information.
3.1 - 67 om60n06sa - om50n05st 3.1 om60n06sa (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 55 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 520 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 130 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 34 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 60 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .025 v gs = 10 v, i d = 30 a resistance .050 t c = 100c i d(on) on state drain current 55 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 16 s v ds > i d(on) x r ds(on)max , i d = 30 a c ies input capacitance 2500 pf v ds = 25 v c oes output capacitance 950 pf v gs = 0 c res reverse transfer capacitance 250 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 110 ns v dd = 25 v, i d = 55 a t r rise time 300 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 160 a/s v dd = 40 v, i d = 55 a r g = 50 , v gs = 10 v q g total gate charge 65 nc v dd = 25 v, i d = 30 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 55 a t f fall time 160 ns r g = 50 , v gs = 10 v t cross cross-over time 320 440 ns electrical characteristics - source drain diode i sd source drain current 55 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 1.6 v i sd = 55 a, v gs = 0 t rr reverse recovery time 100 ns i sd = 55 a, di/dt = 100 a/s v r = 25 v, t j = 150c q rr reverse recovery charge .25 c i rrm reverse recovery current 5 a *pulsed: pulse duration 300s, duty cycle 1.5%. om50n06sa (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 50 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 400 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 30 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 60 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .028 v gs = 10 v, i d = 25 a resistance .056 t c = 100c i d(on) on state drain current 50 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 17 s v ds > i d(on) x r ds(on)max , i d = 25 a c ies input capacitance 2000 pf v ds = 25 v c oes output capacitance 1000 pf v gs = 0 c res reverse transfer capacitance 300 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 45 ns v dd = 25 v, i d = 29 a t r rise time 90 ns r g = 4.7 , v gs = 10 v (di/dt) on turn-on current slope 200 a/s v dd = 40 v, i d = 50 a r g = 50 , v gs = 10 v q g total gate charge 45 nc v dd = 40 v, i d = 50 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 50 a t f fall time 90 ns r g = 50 , v gs = 10 v t cross cross-over time 250 ns electrical characteristics - source drain diode i sd source drain current 50 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 2 v i sd = 50 a, v gs = 0 t rr reverse recovery time 150 ns i sd = 50 a, di/dt = 100 a/s v r = 30 v, t j = 150c q rr reverse recovery charge 0.2 c i rrm reverse recovery current 4 a *pulsed: pulse duration 300s, duty cycle 1.5%.
3.1 - 68 om60n06sa - om50n05st 3.1 om50n06st (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 50 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 400 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 30 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 60 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .033 v gs = 10 v, i d = 25 a resistance .066 t c = 100c i d(on) on state drain current 50 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 17 s v ds > i d(on) x r ds(on)max , i d = 25 a c ies input capacitance 2000 pf v ds = 25 v c oes output capacitance 1000 pf v gs = 0 c res reverse transfer capacitance 300 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 45 ns v dd = 25 v, i d = 29 a t r rise time 90 ns r g = 4.7 , v gs = 10 v (di/dt) on turn-on current slope 200 a/s v dd = 40 v, i d = 50 a r g = 50 , v gs = 10 v q g total gate charge 45 nc v dd = 40 v, i d = 50 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 50 a t f fall time 90 ns r g = 50 , v gs = 10 v t cross cross-over time 250 ns electrical characteristics - source drain diode i sd source drain current 50 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 2 v i sd = 50 a, v gs = 0 t rr reverse recovery time 150 ns i sd = 50 a, di/dt = 100 a/s v r = 30 v, t j = 150c q rr reverse recovery charge 0.2 c i rrm reverse recovery current 4 a *pulsed: pulse duration 300s, duty cycle 1.5%. om60n05sa (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 55 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 520 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 130 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 34 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 50 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .025 v gs = 10 v, i d = 30 a resistance .050 t c = 100c i d(on) on state drain current 55 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 16 s v ds > i d(on) x r ds(on)max , i d = 30 a c ies input capacitance 2500 pf v ds = 25 v c oes output capacitance 950 pf v gs = 0 c res reverse transfer capacitance 250 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 110 ns v dd = 25 v, i d = 55 a t r rise time 300 ns r g = 50 , v gs = 10 v (di/dt) on turn-on current slope 160 a/s v dd = 40 v, i d = 55 a r g = 50 , v gs = 10 v q g total gate charge 65 nc v dd = 25 v, i d = 30 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 55 a t f fall time 160 ns r g = 50 , v gs = 10 v t cross cross-over time 320 ns electrical characteristics - source drain diode i sd source drain current 55 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 1.6 v i sd = 55 a, v gs = 0 t rr reverse recovery time 100 ns i sd = 55 a, di/dt = 100 a/s v r = 25 v, t j = 150c q rr reverse recovery charge .25 c i rrm reverse recovery current 5 a *pulsed: pulse duration 300s, duty cycle 1.5%.
3.1 - 69 om60n06sa - om50n05st 3.1 om50n05sa (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 50 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 400 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 30 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 50 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .028 v gs = 10 v, i d = 25 a resistance .056 t c = 100c i d(on) on state drain current 50 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 17 s v ds > i d(on) x r ds(on)max , i d = 25 a c ies input capacitance 2000 pf v ds = 25 v c oes output capacitance 1000 pf v gs = 0 c res reverse transfer capacitance 300 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 45 ns v dd = 25 v, i d = 29 a t r rise time 90 ns r g = 4.7 , v gs = 10 v (di/dt) on turn-on current slope 200 a/s v dd = 40 v, i d = 50 a r g = 50 , v gs = 10 v q g total gate charge 45 nc v dd = 40 v, i d = 50 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 50 a t f fall time 90 ns r g = 50 , v gs = 10 v t cross cross-over time 250 ns electrical characteristics - source drain diode i sd source drain current 50 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 2 v i sd = 50 a, v gs = 0 t rr reverse recovery time 150 ns i sd = 50 a, di/dt = 100 a/s v r = 30 v, t j = 150c q rr reverse recovery charge 0.2 c i rrm reverse recovery current 4 a *pulsed: pulse duration 300s, duty cycle 1.5%. om50n05st (t c = 25c unless otherwise specified) avalanche characteristics min. typ. max. units test conditions i ar avalanche current 50 a (repetitive or non-repetitive,t j = 25c) e as single pulse avalanche energy 400 mj (starting t j = 25c, i d = i ar , v dd = 25 v) e ar repetitive avalanche energy 100 mj (pulse width limited by t j max , d < 1%) i ar avalanche current 30 a (repetitive or non-repetitive, t j = 100c) electrical characteristics - off v (br)dss drain-source 50 v i d = 250 a, v gs = 0 breakdown voltage i dss zero gate voltage 250 a v ds = max. rat. drain current (v gs = 0) 1000 a v ds = max. rat. x 0.8, t c = 125c i gss gate-body leakage 100 na v gs = 20 v current (v ds = 0) electrical characteristics - on* v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250 a r ds(on) static drain-source on .033 v gs = 10 v, i d = 25 a resistance .066 t c = 100c i d(on) on state drain current 50 a v ds > i d(on) x r ds(on)max , v gs = 10 v electrical characteristics - dynamic g fs forward transconductance 17 s v ds > i d(on) x r ds(on)max , i d = 25 a c ies input capacitance 2000 pf v ds = 25 v c oes output capacitance 1000 pf v gs = 0 c res reverse transfer capacitance 300 pf f = 1 mhz electrical characteristics - switching on t d(on) turn-on time 45 ns v dd = 25 v, i d = 29 a t r rise time 90 ns r g = 4.7 , v gs = 10 v (di/dt) on turn-on current slope 200 a/s v dd = 40 v, i d = 50 a r g = 50 , v gs = 10 v q g total gate charge 45 nc v dd = 40 v, i d = 50 a, v gs = 10 v electrical characteristics - switching off t r(voff) off voltage rise time 160 ns v dd = 40 v, i d = 50 a t f fall time 90 ns r g = 50 , v gs = 10 v t cross cross-over time 250 ns electrical characteristics - source drain diode i sd source drain current 50 a i sdm * source drain current (pulsed) 200 a v sd forward on voltage 2 v i sd = 50 a, v gs = 0 t rr reverse recovery time 150 ns i sd = 50 a, di/dt = 100 a/s v r = 30 v, t j = 150c q rr reverse recovery charge 0.2 c i rrm reverse recovery current 4 a *pulsed: pulse duration 300s, duty cycle 1.5%.
om60n06sa - om50n05st 3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 d.u.t. r l 2200 ? 3.3 ? v dd v d r s v ds f w aa a b b d s g g d s l = 100? d.u.t. 85 3.3 ? 1000 ? v ds r c + mos diode fast diode 25 b v gs (v) 12 8 4 0 0 204060q g (nc) v ds = 25v i d = 40a c(pf) 4000 3000 2000 1000 010203040v ds (v) v ds = 0 f = 1mhz c ies c oes c res v gs(th) (norm) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 t j (?) v ds = v gs i d = 250? r ds(on) (norm) -50 v gs = 10v 2.0 1.5 1.0 0.5 0 50 100 t j (?) switching times test circuits for resistive load test circuit for inductive load switching and diode reverse recovery time capacitance variations normalized on resistance vs temperature gate charge vs gate-source voltage normalized gate threshold voltage vs temperature typical characteristics
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