insulated gate bipolar transistor features ultrafast igbt benefits ? benchmark efficiency above 20khz optimized for welding, ups, and induction heating applications rugged with ultrafast performance low emi significantly less snubber required excellent current sharing in parallel operation longer leads for easier mounting ultrafast non punch through (npt) technology 10 s short circuit capability square rbsoa positive v ce (on) temperature coefficient extended lead to-247 package v ces = 1200v v ce(on) typ. = 3.05v v ge = 15v, i c = 20a, 25c g c e thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 0.42 r cs case-to-sink, flat, greased surface ??? 0.24 ??? r ja junction-to-ambient, typical socket mount ??? ??? 40 wt weight ??? 6 (0.21) ??? g (oz) z jc transient thermal impedance junction-to-case (fig.18) c/w n-channel to-247ad absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage 1200 v i c @ t c = 25 c continuous collector current (fig.1) 40 i c @ t c = 100 c continuous collector current (fig.1) 20 a i cm pulsed collector current (fig.3, fig. ct.5) 120 i lm clamped inductive load current (fig.4, fig. ct.2) 120 v ge gate-to-emitter voltage 20 v e as @ t c =25 c avalanche energy, single pulse 65 i c = 25a, v cc = 50v, r ge = 25ohm l = 200h (fig. ct.6) p d @ t c = 25 c maximum power dissipation (fig.2) 300 p d @ t c = 100 c maximum power dissipation (fig.2) 120 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) c mounting torque, 6-32 or m3 screw. 10 lbf in (1.1n m) w mj 03/06/01 irgp20b120u-e www.irf.com 1 pd- 94117
irgp20b120u-e 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v,i c =250 a ? ? c v ge = 0v, i c = 1 ma ( 25 -125 o c ) 3.05 3.45 i c = 20a, v ge = 15v 5, 6 collector-to-emitter saturation 3.37 3.80 i c = 25a, v ge = 15v 7, 8 v ce(on) voltage 4.23 4.85 v i c = 40a, v ge = 15v 9 3.89 4.50 i c = 20a, v ge = 15v, t j = 125 c 10 4.31 5.06 i c = 25a, v ge = 15v, t j = 125 c v ge(th) gate threshold voltage 4.0 5.0 6.0 v v ce = v ge , i c = 250 a 8,9,10,11 ? ? c 1482 2200 v ge = 0v, v ce = 1200v, t j =150 c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. q g total gate charge (turn-on) 169 254 i c = 20a 17 q ge gate - emitter charge (turn-on) 24 36 nc v cc = 600v ct 1 q gc gate - collector charge (turn-on) 82 126 v ge = 15v e on turn-on switching loss * 850 1050 i c = 20a, v cc = 600v ct 4 e off turn-off switching loss * 425 650 j v ge = 15v, rg = 5 ?, l = 200h wf1 e tot total switching loss * 1275 1800 t j = 25 o c, energy losses include tail and diode reverse recover y wf2 e on turn-on switching loss * 1350 1550 ic = 20a, v cc = 600v 12, 14 e off turn-off switching loss * 610 875 j v ge = 15v, rg = 5 ?, l = 200h ct 4 e tot total switching loss * 1960 2425 t j = 125 o c, energy losses include tail and diode reverse recovery wf1 & 2 td(on) turn - on delay time 50 65 ic = 20a, v cc = 600v 13, 15 tr rise time 20 30 ns v ge = 15v, rg = 5 ?, l = 200h ct 4 td(off) turn - off delay time 204 230 t j = 125 o c wf1 tf fall time 24 35 wf2 c ies input capacitance 2200 v ge = 0v c oes output capacitance 210 pf v cc = 30v 16 c res reverse transfer capacitance 85 f = 1.0 mhz t j = 150 o c, ic = 120a 4 rbsoa reverse bias safe operating area full square v cc = 1000v, v p = 1200v ct 2 rg = 5 ? ct 3 scsoa short circuit safe operating area 10 ---- ---- s v cc = 900v, v p = 1200v wf3 rg = 5 ?
irgp20b120u-e www.irf.com 3 fi g .1 - maximum dc collector current vs. case tem perature 0 5 10 15 20 25 30 35 40 45 50 0 40 80 120 160 t c ( c) i c ( a ) fi g .3 - f o rw a rd s o a t c =25 c; tj< 150 c 0.1 1 10 100 1000 1 10 100 1000 10000 v ce (v ) i c ( a ) dc 10ms 1ms 100 s 10 s 2 s pulsed fi g .2 - power dissipation vs. case temperature 0 40 80 120 160 200 240 280 320 04080120160 t c ( c ) p t o t ( w ) fi g .4 - r e ve rse b ia s s o a tj = 150 c, v ge = 15v 1 10 100 1000 1 10 100 1000 10000 v ce (v ) i c ( a )
irgp20b120u-e 4 www.irf.com fi g .5 - t y p ic a l ig b t o u tp u t characteristics tj= -40 c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v ) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fi g .6 - t y pical igbt output characteristics tj=25 c ; tp =3 0 0 s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fi g .7 - t y pical ig b t o utp ut characteristics tj=125 c ; tp=3 00s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v ) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v
irgp20b120u-e www.irf.com 5 fi g .9 - t y pical v ce vs v ge tj= -40 c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v ) v c e ( v ) i ce =10a i ce =20a i ce =40a 8 fi g .1 0 - t y pical v ce vs v ge tj= 25 c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =20a i ce =40a 9 fi g .1 1 - t y pical v ce vs v ge tj= 125 c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v ) v c e ( v ) i ce =10a i ce =20a i ce =40a 10 fi g .12 - t y p. transfer characteristics v ce =20v; tp=20 s 0 25 50 75 100 125 150 175 200 225 250 0 4 8 121620 v ge (v ) i c ( a ) t j =25 c t j =125 c t j =25 c t j =125 c 11
irgp20b120u-e 6 www.irf.com fi g .13 - t y pical ener gy loss vs ic tj=125 c; l=200h; v ce =600v; r g =22 ? c; l=200h; v ce =600v; r g =22 ? c; l=200h; v ce =600v; i ce =20a; v ge =15v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0 5 10 15 20 25 30 35 40 45 50 55 r g (ohms) e n e r g y ( u j eon eoff 14 fi g .16 - t y pical switchin g tim e vs r g tj=125 c; l=200h; v ce =600v; i ce =20a; v ge =15v 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 r g (ohms) t ( n s ) tdon tdoff tr tf 15
irgp20b120u-e www.irf.com 7 fi g .22 - typical capacitance vs v ce v ge =0 v ; f=1 m h z 10 100 1000 10000 0 20406080100 v ce (v ) c a p a c i t a n c e ( p c ies c oes c res 16 fi g .2 3 - t y p . g a te c h a r g e vs. v ge i c =20a; l=600h 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 q g , t o ta l g a te c h a r g e (nc) v g e ( v ) 600v 800v 17 fi g .24 - normalized transient thermal impedance, junction-to-case 0.001 0.01 0.1 1 10 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , r ectan g ular pulse duration (sec)
irgp20b120u-e 8 www.irf.com fig. ct.1 - gate charge circuit (turn-off) fig. ct.2 - rbsoa circuit fig. ct.3 - s.c. soa circuit fig. ct.4 - switching loss circuit fig. ct.5 - resistive load circuit 1k vcc dut 0 l dc driver dut 900v diode clamp l rg vcc dut / driver rg vcc dut r = vcc icm l r g 80 v dut 1000v + - l rg vcc dut fig. ct.6 - unclamped inductive load circuit
irgp20b120u-e www.irf.com 9 fig. wf.1 - typ. turn-off loss waveform @ tj=125 c using fig. ct.4 -200 0 200 400 600 800 1000 -0.2 0.0 0.2 0.4 0.6 0.8 t i m e ( s) v c e ( v -5 0 5 10 15 20 25 i c e ( a t f 90% i ce 5% i ce 5% v ce e of f loss fig. wf.2 - typ. turn-on loss waveform @ tj=125 c using fig. ct.4 -200 0 200 400 600 800 -0 .2 -0 .1 0 .0 0 .1 0 .2 0 .3 t i m e ( s) v c e ( v -20 0 20 40 60 80 i c e ( a test current 90% test current 10% test current 5% v ce t r eon loss fig. wf.3- typ. s.c. waveform @ t c =150 c using fig. ct.3 0 200 400 600 800 1000 1200 -10 0 10 20 30 t i m e ( s) v c e ( v -50 0 50 100 150 200 250 i c e ( a
irgp20b120u-e 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/01 to-247ad case outline and dimensions
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