tsdf1220 / 1220r / 1220w / 1220rw document number 85066 rev. 1.7, 19-apr-06 vishay semiconductors www.vishay.com 1 13629 sot-143 sot-343 sot-343r 1 2 4 3 sot-143r 2 1 3 4 1 2 4 3 2 1 3 4 electrostatic sensitive device. observe precautions for handling. 12 ghz silicon npn planar rf transistor features ? low power applications ? very low noise figure ? high transition frequency f t = 12 ghz ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for low noise applications such as preamplifiers, mix- ers and oscillators in anal og and digital tv-systems (e.g., satellite tu ners) up to microwave frequencies. mechanical data typ: tsdf1220 case: sot143 plastic case weight: approx. 8.0 mg pinning: 1 = collector, 2 = emitter, 3 = base, 4 = emitter typ: tsdf1220r case: sot143r plastic case weight: approx. 8.0 mg pinning: 1 = collector, 2 = emitter, 3 = base, 4 = emitter typ: tsdf1220w case: sot343 plastic case weight: approx. 6.0 mg pinning: 1 = collector, 2 = emitter, 3 = base, 4 = emitter typ: TSDF1220RW case: sot343r plastic case weight: approx. 6.0 mg pinning: 1 = collector, 2 = emitter, 3 = base, 4 = emitter parts table part ordering code type marking remarks tsdf1220 tsdf1220-gs08 f20 tape and reel tsdf1220r tsdf1220r-gs08 20f tape and reel TSDF1220RW TSDF1220RW-gs08 w2f tape and reel tsdf1220w tsdf1220w-gs08 wf2 tape and reel e3
www.vishay.com 2 document number 85066 rev. 1.7, 19-apr-06 tsdf1220 / 1220r / 1220w / 1220rw vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit collector-base voltage v cbo 9v collector-emitter voltage v ceo 6v emitter-base voltage v ebo 2v collector current i c 40 ma total power dissipation t amb 60 c p tot 200 mw junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction to ambient air 1) r thja 450 k/w parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 12 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 2 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 6v collector-emitter saturation voltage i c = 30 ma, i b = 3 ma v cesat 0.1 0.5 v dc forward current transfer ratio v ce = 5 v, i c = 20 ma h fe 50 100 150 parameter test condition symbol min ty p. max unit transition frequency v ce = 5 v, i c = 20 ma, f = 1 ghz f t 12 ghz collector-base capacitance v cb = 1 v, f = 1 mhz c cb 0.3 pf collector-emitter capacitance v ce = 1 v, f = 1 mhz c ce 0.35 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.5 pf noise figure v ce = 5 v, i c = 3 ma, z s = z sopt , z l = 50 , f = 2 ghz f1.2db power gain v ce = 5 v, i c = 20 ma, z s = z sopt , z l = 50 , f = 2 ghz g pe 14 db transducer gain v ce = 5 v, i c = 20 ma, z 0 = 50 , f = 2 ghz |s 21e | 2 12.5 db third order intercept point at output v ce = 5 v, i c = 20 ma, f = 2 ghz ip 3 22 dbm
tsdf1220 / 1220r / 1220w / 1220rw document number 85066 rev. 1.7, 19-apr-06 vishay semiconductors www.vishay.com 3 typical characteristics t amb = 25 c unless otherwise specified figure 1. total power dissipat ion vs. ambient temperature figure 2. transiti on frequency vs. collector current 0 50 100 150 200 250 300 0 204060 8 0 100 120 140 160 96 12159 p - total po w er dissipation (m w ) tot t am b -am b ient temperat u re (c) 0 4 8 12 16 20 0 5 10 15 20 25 30 i c - collector c u rrent (ma) 142 88 f - transition fre qu ency (ghz) t v ce =5 v f=1ghz v ce =3 v f=1ghz figure 3. collector base capacit ance vs. collector base voltage figure 4. noise figure vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 012345 v cb ? collector base v oltage ( v ) 142 8 9 c - collector base capacitance (pf) c b 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 i c ? collector c u rrent (ma) 14290 f? n oise fig u re (db) v ce =5 v f=2ghz z s =50
www.vishay.com 4 document number 85066 rev. 1.7, 19-apr-06 tsdf1220 / 1220r / 1220w / 1220rw vishay semiconductors package dimensions in mm (inches): sot143 package dimensions in mm (inches): sot143r 9612240 foot print recommendation: 0. 8 [0.031] 1.9 [0.075] 0. 8 [0.031] 1.7 [0.067] 1.2 [0.047] 0. 8 [0.031] 0.9 [0.035] 0.9 [0.035] 0.15 [0.006] 0.0 8 [0.003] 1.1 [0.043] 0.1 [0.004] max. 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1. 8 [0.071] 2 [0.079] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] 1.6 [0.063] 2. 8 [0.110] 3 [0.11 8 ] 2.35 [0.093] 2.6 [0.102] 0.35 [0.014] 0.5 [0.020] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 1. 8 [0.071] 2 [0.079] 9612239 foot print recommendation: 2 [0.079] 3 [0.11 8 ] 0.1 [0.004] max. 2. 8 [0.110] 0.35 [0.014] 1.6 [0.063] 0.5 [0.020] 1. 8 [0.071] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.15 [0.006] 0.0 8 [0.003] 1.1 [0.043] 0.9 [0.035] 2.35 [0.093] 2.6 [0.102] 0. 8 [0.031] 1.9 [0.075] 0. 8 [0.031] 1.7 [0.067] 1.2 [0.047] 1.2 [0.047] 0.9 [0.035] 0.9 [0.035] 1.4 [0.055] 1.2 [0.047] 1. 8 [0.071] 2 [0.079] 0.9 [0.035] 0.75 [0.030]
tsdf1220 / 1220r / 1220w / 1220rw document number 85066 rev. 1.7, 19-apr-06 vishay semiconductors www.vishay.com 5 package dimensions in mm (inches): sot343 package dimensions in mm (inches): sot343r foot print recommendation: 9612237 1.35 [0.053] 1.2 [0.047] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 0.6 [0.024] 0.4 [0.016] 0.25 [0.010] 0.7 [0.02 8 ] 0.55 [0.022] 1.25 [0.049] 1.05 [0.041] 0.1 [0.004] max. 0.4 [0.016] 1. 8 [0.071] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.0 8 7] 0.4 [0.016] 0.25 [0.010] 2.2 [0.0 8 7] 2 [0.079] 0.2 [0.00 8 ] 1.15 [0.045] 0.09 [0.035] 1.3 [0.051] 0.1 [0.004] 1 [0.039] 0. 8 [0.031] 0. 8 [0.031] 961223 8 1.35 [0.053] 1.2 [0.047] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 0.9 [0.035] 0.4 [0.016] 0.25 [0.010] 0.7 [0.02 8 ] 0.55 [0.022] 1.25 [0.049] 1.05 [0.041] 0.1 [0.004] max. 0.4 [0.016] 1. 8 [0.071] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.0 8 7] 0.4 [0.016] 0.25 [0.010] 2.2 [0.0 8 7] 2 [0.079] 0.2 [0.00 8 ] 1.15 [0.045] 0.06 [0.024] 1.3 [0.051] 0.1 [0.004] 1 [0.039] 0. 8 [0.031] 0. 8 [0.031] foot print recommendation:
www.vishay.com 6 document number 85066 rev. 1.7, 19-apr-06 tsdf1220 / 1220r / 1220w / 1220rw vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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