provisional data sheet t0500na25e issue 2 page 1 of 7 march, 2003 westcode an ixys company date:- 10 mar, 2003 data sheet issue:- 2 provisional data insulated gate bi-polar transistor type t0500na25e (development type number: tx044na25e) absolute maximum ratings voltage ratings maximum limits units v ces collector ? emitter voltage 2500 v v dc link permanent dc voltage for fit failure rate. 1250 v v ges peak gate ? emitter voltage 20 v ratings maximum limits units i c(dc) continuous dc collector current, igbt (note 2). 605 a i crm repetitive peak collector current, t p =1ms, igbt. 1000 a i eco maximum reverse emitter current, t p =1ms (note 4). 500 a p max maximum power dissipation, igbt (note 3). 2.6 kw t j operating temperature range. -40 to +125 c t stg storage temperature range. -40 to +125 c notes: - 1) unless otherwise indicated t j = 125oc. 2) t sink = 55c, double side cooled. 3) t sink = 25c, double side cooled. 4) the use of an anti-parallel diode is recommended.
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 2 of 7 march, 2003 characteristics igbt characteristics parameter min typ max test conditions units -2.42.7i c = 500a, v ge = 15v, t j = 25c v v ce(sat) collector ? emitter saturation voltage - 2.75 3.3 i c = 500a, v ge = 15v v v to threshold voltage - - 1.57 v r t slope resistance - - 2.35 current range: 300 ? 650a m ? v eco reverse avalanche voltage - 22 - i eco = 200a v v ge(th) gate threshold voltage 6 7.5 9 v ce = v ge , i c = 200ma v i ces collector ? emitter cut-off current - 2 7 v ce = v ces , v ge = 0v ma i ges gate leakage current - - 3.5 v ge = 20v a c ies input capacitance - 82 - v ce = 25v, v ge = 0v, f = 1mhz nf t d(on) turn-on delay time - 2.3 - s t r (i) rise time - 2.0 - s q g(on) turn-on gate charge - - 15 c e on turn-on energy - 0.8 - j t d(off) turn-off delay time - 1.6 - s t f fall time - 2.5 - s q g(off) turn-off gate charge - - 38 c e off turn-off energy - 0.5 - i c =500a, v ce = 0.5v ces , v ge = 20v, r g(on) = 20 ?, r g(off) =15 ?, snubber : 10 ? and 0.22f in series j thermal characteristics parameter min typ max test conditions units - - 38.6 double side cooled k/kw - - 58.6 collector side cooled k/kw r th(j-hs) thermal impedance junction to sink, igbt - - 112 emitter side cooled k/kw f mounting force 8 - 12 kn w t weight - 0.5 - kg notes:- 1) unless otherwise indicated t j =125 c.
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 3 of 7 march, 2003 curves figure 1 ? typical and maximum collector-emitter saturation voltage characteristics figure 2 ? typical output characteristic at 25c 10 100 1000 012345 collector to emitter saturation voltage - v ce(sat) (v) collector current - i c (a) t j =25c t j =125c v ge =+15v t0500na25e issue 2 0 200 400 600 800 012345 v ce(sat) (v) collector current - i c (a) v ge =20v v ge =18v v ge =17v v ge =15v v ge =13v v ge =12v t0500na25e issue 2 figure 3 ? typical output characteristic at 125c figure 4 ? typical turn-on gate charge 0 200 400 600 800 012345 v ce(sat) (v) collector current - i c (a ) v ge =20v v ge =18v v ge =17v v ge =15v v ge =13v v ge =12v t0500na25e issue 2 4 6 8 10 12 14 16 10 20 30 40 50 60 gate resistance - r g(on) ( ? ? ? ? ) gate charge - q g(on) (c) i c =300a i c =500a v ce =1250v v ge =15v t j =125c t0500na25e issue 2
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 4 of 7 march, 2003 figure 5 ? typical turn-off gate charge figure 6 ? typical turn-on delay time vs gate resistance 20 25 30 35 40 10 20 30 40 gate resistance - r g(off) ( ? ? ? ? ) gate charge - q g(off) (c) i c =300a i c =500a v ce =1250v v ge =15v t j =125c t0500na25e issue 2 0 1 2 3 4 5 6 7 8 10 20 30 40 50 60 gate resistance - r g(on) ( ? ? ? ? ) turn-on delay time - t d(on) (s) i c =300a i c =500a v ce =1250v v ge =15v t j =125c t0500na25e issue 2 figure 7 ? typical turn-off delay time vs. gate resistance figure 8 ? typical turn-on energy vs. collecto r current 0 1 2 3 4 10 15 20 25 30 35 40 45 gate resistance - r g(off) ( ? ? ? ? ) turn-off delay time - t d(off) (s) i c =300a i c =500a t0500na25e issue 2 v ce =1250v v ge =15v t j =125c 0 200 400 600 800 1000 0 100 200 300 400 500 600 collector current - i c (a) turn-on energy per pulse - e (on) (mj) v ce =900v v ce =1250v r g(on) =20 ? v ge =15v t j =125c v ce =600v t0500na25e issue 2
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 5 of 7 march, 2003 figure 9 ? typical turn-on energy vs. di/dt figure 10 ? typical turn-off energy vs. collector current 0 500 1000 1500 2000 200 400 600 800 1000 1200 1400 commutation rate - di/dt (a/s) turn-on energy per pulse - e (on) (mj) i c =300a t0500na25e issue 2 v ce =1250v v ge =15v t j =125c i c =500a 0 100 200 300 400 500 600 0 100 200 300 400 500 600 collector current - i c (a) turn-on energy per pulse - e (off) (mj) v ce =900v v ce =1250v r g(off) =15 ? v ge =15v t j =125c v ce =600v t0500na25e issue 2 figure 11 ? turn-off energy vs voltage figure 12 ? safe operating area 0 100 200 300 400 500 600 0 500 1000 1500 2000 collector-emitter voltage - v ce (v) turn-off energy vs voltage - e off (mj) r g(off) =15 ? v ge =15v t j =125c i c =360a i c =200a i c =100a t0500na25e issue 2 0 200 400 600 800 1000 1200 0 1000 2000 3000 4000 gollector-emitter voltage - v ce (v) collector current - i c (a) v ge =15v t j =125c t0500na25e issue 2
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 6 of 7 march, 2003 figure 13 ? transient thermal impedance 0.00001 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 time (s) transient thermal impedance junction to sink - r thjk (k/w) emitter collecto r double side t0500na25e issue 2
westcode westcode westcode westcode an ixys company insulated gate bi-polar transistor type t0500na25e provisional data sheet t0500na25e issue 2 page 7 of 7 march, 2003 outline drawing & ordering information 171a107 ordering information (please quote 10 digit code as below) t0500 na 25 e fixed type code fixed outline code voltage grade 2500v fixed format code typical order code: t0500na25e (v ces = 2500v) ixys semiconductor gmbh edisonstra?e 15 d-68623 lampertheim tel: +49 6206 503-0 fax: +49 6206 503-627 e-mail: marcom@ixys.de westcode semiconductors ltd langley park way, langley park, chippenham, wiltshire, sn15 1ge. tel: +44 (0)1249 444524 fax: +44 (0)1249 659448 e-mail: wsl.sales@westcode,com ixys corporation 3540 bassett street santa clara ca 95054 usa tel: +1 (408) 982 0700 fax: +1 (408) 496 0670 e-mail: sales@ixys.net www.westc ode.com www.ixys.net westcode semiconductors inc 3270 cherry avenue long beach ca 90807 usa tel: +1 (562) 595 6971 fax: +1 (562) 595 8182 e-mail: wsi.sales@westcode.com the information contained herein is confidential and is protected by copyright. the information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors westcode semiconductors ltd. in the interest of product improvement, westcode reserves the right to change specifications at any time without prior notice. devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subjec t to the conditions and limits contained in this report. ? westcode semiconductors ltd.
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