v ces = 600v v ce(on) typ. = 1.84v @v ge = 15v, i c = 30a absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 52 i c @ t c = 100c continuous collector current 30 a i cm pulsed collector current 104 i lm clamped inductive load current 104 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 170 mj p d @ t c = 25c maximum power dissipation 200 w p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbfin (1.1nm) irg4pc50k short circuit rated ultrafast igbt insulated gate bipolar transistor pd - 91583b parameter typ. max. units r jc junction-to-case ??? 0.64 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient, typical socket mount ??? 40 wt weight 6 (0.21) ??? g (oz) thermal resistance to-247ac e c g n-channel features features features features features high short circuit rating optimized for motor control, t sc =10s, @360v v ce (start), t j = 125 c, v ge = 15v combines low conduction losses with high switching speed latest generation design provides tighter parameter distribution and higher efficiency than previous generations as a freewheeling diode we recommend our hexfred tm ultrafast, ultrasoft recovery diodes for minimum emi / noise and switching losses in the diode and igbt latest generation 4 igbts offer highest power density motor controls possible this part replaces the irgpc50k and irgpc50m devices benefits 4/15/2000 www.irf.com 1
irg4pc50k 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 200 300 i c = 30a q ge gate - emitter charge (turn-on) ? 25 38 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) ? 85 130 v ge = 15v t d(on) turn-on delay time ? 38 ? t r rise time ? 34 ? t j = 25 c t d(off) turn-off delay time ? 160 240 i c = 30a, v cc = 480v t f fall time ? 79 120 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 0.49 ? energy losses include "tail" e off turn-off switching loss ? 0.68 ? mj see fig. 9,10,14 e ts total switching loss ? 1.12 1.4 t sc short circuit withstand time 10 ?? s v cc = 400v, t j = 125 c v ge = 15v, r g = 10 ? , v cpk < 500v t d(on) turn-on delay time ? 37 ? t j = 150 c, t r rise time ? 35 ? i c = 30a, v cc = 480v t d(off) turn-off delay time ? 260 ? v ge = 15v, r g = 5.0 ? t f fall time ? 170 ? energy losses include "tail" e ts total switching loss ? 2.34 ? mj see fig. 11,14 l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 3200 ? v ge = 0v c oes output capacitance ? 370 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 95 ?? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 18 ?? vv ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.47 ? v/ cv ge = 0v, i c = 1.0ma ? 1.84 2.2 i c = 30a v ge = 15v v ce(on) collector-to-emitter saturation voltage ? 2.19 ? i c = 52a see fig.2, 5 ? 1.79 ? i c = 30a , t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -12 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 17 24 ? sv ce = 100 v, i c = 30a ?? 250 v ge = 0v, v ce = 600v ?? 2.0 v ge = 0v, v ce = 10v, t j = 25 c ?? 5000 v ge = 0v, v ce = 600v, t j = 150 c i ges gate-to-emitter leakage current ?? 100 n a v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns repetitive rating; pulse width limited by maximum junction temperature. pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 ?
irg4pc50k www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 v , collector-to-emitter volta g e (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter volta g e (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0 10 20 30 40 50 60 70 0.1 1 10 100 f, fre q uenc y ( khz ) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125 c t = 90 c gate drive as specified sink j p o w e r d is s ip a tio n = 4 0 w triangular wave: clamp voltage: 80% of rated
irg4pc50k 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 60 c i = a 30 c i = a 15 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
irg4pc50k www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 60 c i = a 30 c i = a 15 c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature ? 1 10 100 0 1000 2000 3000 4000 5000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c res c oes c ies 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 30a cc c 0 10 20 30 40 50 0.0 1.0 2.0 3.0 4.0 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 30a cc ge j c (?) 5.0 ?
irg4pc50k 6 www.irf.com 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 10 20 30 40 50 60 0.0 2.0 4.0 6.0 8.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge 5.0 ?
irg4pc50k www.irf.com 7 480v 4 x i c @ 25 c d.u.t. 50v l v * c * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
irg4pc50k 8 www.irf.com case outline and dimensions ? to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 c o n fo r m s to je d e c o u tlin e to-247ac. lead assignments 1 - g a t e 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r * longer leaded ( 20m m ) version available ( to-247ad ) to order add "-e" suffix to part number ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 4/00
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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