gp30a thru gp30m document number 88640 13-sep-05 vishay general semiconductor www.vishay.com 1 do-201ad p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 glass passivated junction plastic rectifiers major ratings and characteristics i f(av) 3.0 a v rrm 50 v to 1000 v i fsm 125 a i r 5.0 a v f 1.2 v, 1.1 v t j max. 175 c features superectifier struct ure for high reliability condition cavity-free glass-passivated junction low leakage current, typical i r less than 0.1a low forward voltage drop high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in high voltage rectification of power supply, inverters, converters, freewheeling diodes and snub- ber circuit application mechanical data case: do-201ad, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gp30a gp30b gp30d gp30g gp30j gp30k gp30m unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine- wave superimposed on rated load i fsm 125 a maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at t a = 55 c i r(av) 100 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88640 13-sep-05 gp30a thru gp30m vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol gp30a gp30b gp30d gp30g gp30j gp30k gp30m unit maximum instantaneous forward voltage at 3.0 a v f 1.2 1.1 v maximum reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 v, i rr = 0.25 a t rr 5.0 s typical junction capacitance at 4.0 v, 1 mhz c j 40 pf parameter symbol gp30a gp30b gp30d gp30g gp30j gp30k gp30m unit typical thermal resistance (1) r ja r jl 20 10 c/w figure 1. forward current derating curve 0 25 50 100 75 125 150 175 0 1.0 2.0 3.0 4.0 am b ient temperat u re, c a v erage for w ard rect ified c u rrent (a) 60 hz resisti v e or ind u cti v e load 0.375? (9.5mm) lead length figure 2. maximum non-repetitive peak forward surge current 1 10 100 10 100 200 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
gp30a thru gp30m document number 88640 13-sep-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.6 0. 8 0.9 0.7 1.0 1.1 1.2 1.3 10 100 1 0.1 t j = 25 c p u lse w idth = 300 s 1% d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s fo r w ard c u rrent (a) 0 20 40 60 8 0 100 0.01 0.1 1 10 t j = 125 c t j = 25 c t j = 75 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent ( a) figure 5. typical junction capacitance 1 10 100 10 100 t j = 25 c f = 1.0 mhz v sig = 50m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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