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  ? 2004 california micro devices corp. all rights reserved. 01/09/04 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 1 cm1209 4,6 & 8 channel esd protection arrays with zener supply clamp features ? four, six or eight channels of esd protection for high data rate signals  zener diode protects supply rail and eliminates the need for external by-pass capacitors  + 15 kv contact, + 15 kv air esd protection per channel (iec 61000-4-2 standard)  low loading capacitance of 6pf typical  low supply current  available in miniature msop and soic packages  lead-free versions available applications  esd protection for a variety of electronic equip- ment set top boxes  digital tvs  i/o & vga port protection  desktop and notebook computers pdas  cellular phones product description the cm1209 family of diode arrays are designed to provide either 4, 6 or 8 channels of esd protection for electronic components or sub-systems. each channel consists of a pair of diodes which steer the esd cur- rent pulse either to the positive (v p ) or negative (v n ) supply. in addition, there is an integral zener diode between v p and v n to suppress any voltage distur- bance due to these esd current pulses. the cm1209 devices will protect against esd pulses up to 15kv contact discharge per the international standard iec61000-4-2. these devices are particularly well-suited for portable electronics (e.g. cellular phones, pdas, notebook com- puters) because of its small package footprint, high esd protection level, and low loading capacitance. they are also suitable for protecting video output lines and i/o ports in computers, set top boxes, digital tvs and peripheral equipment. the cm1209 family of devices is optionally available with lead-free finishing. 1234 87 6 5 v p v n 12345 10 9 8 76 v p v n 1234 87 5 6 v p v n electrical schematics cm1209-04 cm1209-06 cm1209-08 4-channel 6-channel 8-channel obsolete product
? 2004 california micro devices corp. all rights reserved. 2 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 01/09/04 cm1209 pin descriptions cm1209-04 cm1209-06 cm1209-08 name pin no. pin no pin no type description ch 1 1 1 1 i/o esd channel 1 ch 2 2 2 2 i/o esd channel 2 ch 3 7 4 3 i/o esd channel 3 ch 4 8 5 4 i/o esd channel 4 ch 5 6 6 i/o esd channel 5 ch 6 8 7 i/o esd channel 6 ch 7 9 i/o esd channel 7 ch 8 10 i/o esd channel 8 v n 3,4,5 3 5 gnd negative voltage supply rail or ground reference rail. v p 6 7 8 supply positive voltage supply rail. package / pinout diagrams note: these drawings are not to scale. 8-pin soic/msop 1 2 3 4 8 7 6 5 ch 1 ch 2 v n ch 3 ch 6 v p ch 5 ch 4 top view cm1209-06sn/sm 8-pin msop 1 2 3 4 8 7 6 5 ch 1 ch 2 v n v n ch 4 ch 3 v p v n top view cm1209-04ms/mr 10-pin msop 1 2 3 4 10 9 8 7 ch 1 ch 2 v n ch 3 ch 8 ch 7 v p ch 6 top view cm1209-08ms/mr 56 ch 4 ch 5 CM1209-06MS/mr obsolete product
? 2004 california micro devices corp. all rights reserved. 01/09/04 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 3 cm1209 ordering information note 1: parts are shipped in tape & reel form unless otherwise specified. specifications note 1: only one diode conducting at a time. part numbering information # of channels pins package standard finish lead-free finish ordering part number 1 part marking ordering part number 1 part marking 4 8 msop-8 cm1209-04ms 0904 cm1209-04mr 0914 6 8 soic-8 cm1209-06sn cm1209-06s cm1209-06sm cm1209-06sm 6 8 msop-8 CM1209-06MS 0906 cm1209-06mr 0916 8 10 msop-10 cm1209-08ms 0908 cm1209-08mr 0918 absolute maximum ratings parameter rating units supply voltage (v p - v n )6.0v diode forward dc current (note 1) 20 ma operating temperature range -40 to +85 c storage temperature range -65 to +150 c dc voltage at any channel input (v n - 0.5) to (v p + 0.5) v package power rating soic package msop package 350 200 mw mw standard operating conditions parameter rating units operating temperature range -40 to +85 c operating supply voltage (v p - v n )0 to 5.5v obsolete product
? 2004 california micro devices corp. all rights reserved. 4 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 01/09/04 cm1209 specifications (cont?d) note 1: all parameters specified at t a =-40 to +85c unless otherwise noted. note 2: these parameters guaranteed by design and characterization. note 3: from i/o pins to v p or v n only. note 4: human body model per mil-std-883, method 3015, c discharge = 100pf, r discharge = 1.5k ?, v p = 5.0v, v n grounded. note 5: standard iec 61000-4-2 with c discharge = 150pf, r discharge = 330 ? , v p = 5.0v, v n grounded. note 6: these measurements performed with no external capacitor on v p .. electrical operating characteristics (see note 1) symbol parameter conditions min typ max units i p supply current (v p -v n )=5.5v; t a =25c 10 a v f esd diode forward voltage i f = 20ma; t a =25c 0.65 0.95 v v zbd zener clamp reverse breakdown voltage at 1ma; t a =25c 7 v i leak channel leakage current t a =25c + 0.1 + 1.0 a c in channel input capacitance at 1 mhz, v p =5v, via 10k; v n =0v, v in =2.5v; notes 2 and 6 68pf v esd esd protection peak discharge voltage at any channel input and v p rail contact discharge per iec 61000-4-2 standard air discharge per iec 61000-4-2 standard notes 2, 3, 5, and 6 notes 2, 3, 5, and 6 + 15 + 15 kv kv v cl channel clamp voltage positive transients negative transients at 8kv esd hbm; t a =25c; notes 2, 4 and 6 +12.5 - 5.1 v v z pos dynamic resistance of channel input for positive transients i = 1a; t a =25c; see figure 2; note 6 applies 0.70 ? z neg dynamic resistance of channel input for negative transients i = 1a; t a =25c; see figure 2; note 6 applies 0.45 ? obsolete product
? 2004 california micro devices corp. all rights reserved. 01/09/04 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 5 cm1209 performance information figure 1. typical variation of channel input capacitance (c in ) vs. channel input voltage (v in ) (v p = 5v via 10k resistor, v n = 0v) figure 2. iv curve for cm1209 application information figure 3. application example using the cm1209-06 for i/o port protection 0 2 4 6 8 10 012345 vin cin (pf) slope = i/z pos slope = i/z neg current [i] voltage [v] v zbd cm1209-06 i/o port buffers connector expansion typical esd protection 124568 7 3 0.22  f * * optional capacitor should be placed as close as possible to the v p pin on all cm1209 devices. refer to ?design considerations? text. obsolete product
? 2004 california micro devices corp. all rights reserved. 6 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 01/09/04 cm1209 application information design considerations in order to realize the maximum protection against esd pulses, care must be taken in the pcb layout to minimize parasitic series inductances on the supply/ ground rails as well as the signal trace segment between the signal input (typically a connector) and the esd protection device. refer to figure 4 , which illus- trates an example of a positive esd pulse striking an input channel. the parasitic series inductance back to the power supply is represented by l 1 and l 2 . the volt- age v cl on the line being protected is: v cl = fwd voltage drop of d 1 + v supply + l 1 x d(i esd ) / dt + l 2 x d(i esd ) / dt where i esd is the esd current pulse, and v supply is the positive supply voltage. an esd current pulse can rise from zero to its peak value in a very short time. as an example, a level 4 contact discharge per the iec61000-4-2 standard results in a current pulse that rises from zero to 30 amps in 1ns. here d(i esd )/dt can be approximated by ? i esd / ? t, or 30/(1x10 -9 ). so just 10nh of series induc- tance (l 1 and l 2 combined) will lead to a 300v incre- ment in v cl ! similarly for negative esd pulses, parasitic series inductance from the v n pin to the ground rail will lead to drastically increased negative voltage on the line being protected. the cm1209 has an integrated zener diode between v p and v n . this greatly reduces the effect of supply rail inductance l 2 on v cl by clamping v p at the breakdown voltage of the zener diode. however, for the lowest possible v cl , especially when v p is biased at a voltage significantly below the zener breakdown voltage, it is recommended that a 0.22 f ceramic chip capacitor be connected between v p and the ground plane. as a general rule, the esd protection array should be located as close as possible to the point of entry of expected electrostatic discharges. the power supply bypass capacitor mentioned above should be as close to the v p pin of the protection array as possible, with minimum pcb trace lengths to the power supply, ground planes and between the signal input and the esd device to minimize stray series inductance. additional information see california micro devices application note ap209, ?design considerations for esd protection", under applications at www.calmicro.com. figure 4. application of positive esd pulse between input channel and ground n l 2 l 1 v p v path of esd current pulse i one channel of cm1209 channel input ground rail chassis ground positive supply rail system or circuitry being protected line being protected esd 0.22 f d 1 2 d 0a 20a v cl obsolete product
? 2004 california micro devices corp. all rights reserved. 01/09/04 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 7 cm1209 mechanical details cm1209 devices are packaged in 8-pin and 10-pin msop and 8-pin soic packages. dimensions for these packages are presented on the following pages. for complete information on the msop-8/-10 or soic- 8 packages, see the specific california micro devices package information document. msop-8 mechanical specifications * this is an approximate number which may vary. package dimensions for msop-8 package dimensions package msop pins 8 dimensions millimeters inches min max min max a 0.87 1.17 0.034 0.046 a1 0.05 0.25 0.002 0.010 b 0.30 (typ) 0.012 (typ) c 0.18 0.007 d 2.90 3.10 0.114 0.122 e 2.90 3.10 0.114 0.122 e 0.65 bsc 0.025 bsc h 4.78 4.98 0.188 0.196 l 0.52 0.54 0.017 0.025 # per tube 80 pieces* # per tape and reel 4000 pieces controlling dimension: inches mechanical package diagrams e d h 1234 8765 l end view c e b a a1 seating plane side view top view pin 1 marking obsolete product
? 2004 california micro devices corp. all rights reserved. 8 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 01/09/04 cm1209 mechanical details (cont?d) msop-10 mechanical specifications * this is an approximate number which may vary. package dimensions for msop-10 package dimensions package msop pins 10 dimensions millimeters inches min max min max a 0.75 0.95 0.028 0.038 a1 0.05 0.15 0.002 0.006 b 0.18 0.40 0.006 0.016 c 0.18 0.007 d 2.90 3.10 0.114 0.122 e 2.90 3.10 0.114 0.122 e 0.50 bsc 0.0196 bsc h 4.76 5.00 0.187 0.197 l 0.40 0.70 0.0137 0.029 # per tube 80 pieces* # per tape and reel 4000 controlling dimension: inches mechanical package diagrams e d h 1234 10 9 8 7 l end view c e b a a1 seating plane side view top view 6 5 pin 1 marking obsolete product
? 2004 california micro devices corp. all rights reserved. 01/09/04 430 n. mccarthy blvd., milpitas, ca 95035-5112  tel: 408.263.3214  fax: 408.263.7846  www.calmicro.com 9 cm1209 mechanical details (cont?d) soic-8 mechanical specifications * this is an approximate number which may vary. package dimensions for soic-8 package dimensions package soic pins 8 dimensions millimeters inches min max min max a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 c 0.19 0.25 0.007 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.19 0.150 0.165 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 # per tube 100 pcs* # per tape and reel 2500 pcs controlling dimension: inches mechanical package diagrams e d h 1234 8765 l end view c e b a a1 seating plane side view top view pin 1 marking obsolete product


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