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lb t673, lv t673, lt t673 hyper topled ? hyper-bright led 2000-06-06 1 opto semiconductors besondere merkmale ? geh ? usetyp: wei ? es p-lcc-2 geh ? use besonderheit des bauteils: extrem breite ab- strahlcharakteristik; ideal f r hinterleuchtungen und einkopplungen in lichtleiter wellenl ? nge: 470 nm (blau), 505 nm (verde), 528 nm (true green) abstrahlwinkel: lambertscher strahler (120 ) technologie: ingan optischer wirkungsgrad: 2 lm/w (blau), 6 lm/w (verde), 8 lm/w (true green) gruppierungsparameter: lichtst ? rke, wellenl ? nge verarbeitungsmethode: f r alle smt-best cktechniken geeignet l ? tmethode: ir reflow l ? ten und wellenl ? ten (ttw) vorbehandlung: nach jedec level 2 gurtung: 8 mm gurt mit 2000/rolle, ? 180 mm oder 8000/rolle, ? 330 mm anwendungen ampelanwendung informationsanzeigen im au ? enbereich optischer indikator hinterleuchtung (lcd, schalter, tasten, displays, werbebeleuchtung, allgemeinbeleuchtung) innenbeleuchtung im automobilbereich (z.b. instrumentenbeleuchtung, u. ? .) markierungsbeleuchtung (z.b. stufen, fluchtwege, u. ? .) signal- und symbolleuchten scanner features package: white p-lcc-2 package feature of the device: extremely wide viewing angle; ideal for backlighting and coupling in light guides wavelength: 470 nm (blue), 505 nm (verde), 528 nm (true green) viewing angle: lambertian emitter (120 ) technology: ingan optical efficiency: 2 lm/w (blue), 6 lm/w (verde), 8 lm/w (true green) grouping parameter: luminous intensity, wavelength assembly methods: suitable for all smt assembly methods soldering methods: ir reflow soldering and ttw soldering preconditioning: acc. to jedec level 2 taping: 8 mm tape with 2000/reel, ? 180 mm or 8000/reel, ? 330 mm applications traffic lights outdoor displays optical indicators backlighting (lcd, switches, keys, displays, illuminated advertising, general lighting) interior automotive lighting (e.g. dashboard backlighting, etc.) marker lights (e.g. steps, exit ways, etc.) signal and symbol luminaire scanners
2000-06-06 2 opto semiconductors lb t673, lv t673, lt t673 helligkeitswerte werden mit einer stromeinpr ? gedauer von 25 ms und einer genauigkeit von 11 % ermittelt. luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. -1 farbselektiert nach wellenl ? ngengruppen (siehe seite 4). -1 color selection acc. to wavelength groups (see page 4) typ type emissions- farbe color of emission farbe der lichtaustritts- fl ? che color of the light emitting area lichtst ? rke luminous intensity i f = 20 ma i v (mcd) lichtstrom luminous flux i f = 20 ma v (mlm) bestellnummer ordering code lb t673-m2n2-1 lb t673-n2q1-1 lb t673-m2 lb t673-n1 lb t673-n2 lb t673-p1 lb t673-p2 lb t673-q1 blue colorless clear 22.4 ... 45.0 35.5 ... 90.0 22.4 ... 28.0 28.0 ... 35.5 35.5 ... 45.0 45.0 ... 56.0 56.0 ... 71.0 71.0 ... 90.0 100 (typ.) 180 (typ.) 75 (typ.) 95 (typ.) 120 (typ.) 150 (typ.) 190 (typ.) 240 (typ.) q62703-q4838 q62703-q4887 lv t673-q1r1-1 lv t673-r1s2-1 lv t673-q1 lv t673-q2 lv t673-r1 lv t673-r2 lv t673-s1 lv t673-s2 verde colorless clear 71 ... 140 112 ... 280 71 ... 90 90 ... 112 112 ... 140 140 ... 180 180 ... 224 224 ... 280 310 (typ.) 560 (typ.) 240 (typ.) 300 (typ.) 380 (typ.) 480 (typ.) 600 (typ.) 760 (typ.) q62703-q4845 q62703-q4891 lt t673-q2r2-1 lt t673-r2t1-1 lt t673-q2 lt t673-r1 lt t673-r2 lt t673-s1 lt t673-s2 lt t673-t1 true green colorless clear 90 ... 180 140 ... 355 90 ... 112 112 ... 140 140 ... 180 180 ... 224 224 ... 280 280 ... 355 390 (typ.) 700 (typ.) 300 (typ.) 380 (typ.) 480 (typ.) 600 (typ.) 760 (typ.) 950 (typ.) q62703-q4851 q62703-q4895
lb t673, lv t673, lt t673 2000-06-06 3 opto semiconductors grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit lb lv, lt betriebstemperatur operating temperature range t op ? 40 ? + 100 c lagertemperatur storage temperature range t stg ? 40 ? + 100 c sperrschichttemperatur junction temperature t j + 110 + 125 c durchla ? strom forward current i f 20 ma sto ? strom surge current t 10 s, d = 0.005 i fm t.b.d. a sperrspannung reverse voltage v r 5v leistungsaufnahme power dissipation t a 25 c p tot 85 mw w ? rmewiderstand thermal resistance sperrschicht/umgebung junction/ambient sperrschicht/l ? tpad junction/solder point montage auf pc-board fr 4 (padgr ?? e 16 mm 2 ) mounted on pc board fr 4 (pad size 16 mm 2 ) r th ja r th js 400 180 k/w k/w
2000-06-06 4 opto semiconductors lb t673, lv t673, lt t673 1) wellenl ? ngengruppen / wavelength groups kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol werte values einheit unit lb lv lt wellenl ? nge des emittierten lichtes (typ.) wavelength at peak emission i f = 20 ma peak 465 503 523 nm dominantwellenl ? nge 1) (typ.) dominant wavelength 1) i f = 20 ma dom 470 ?7 505 ?8 528 ?10 nm spektrale bandbreite bei 50 % i rel max (typ.) spectral bandwidth at 50 % i rel max i f = 20 ma ? 25 30 33 nm abstrahlwinkel bei 50 % i v (vollwinkel) (typ.) viewing angle at 50 % i v 2 ? 120 120 120 grad deg. durchla ? spannung (typ.) forward voltage (max.) i f = 20 ma v f v f 3.5 4.2 3.3 4.2 3.3 4.2 v v sperrstrom (typ.) reverse current (max.) v r = 5 v i r i r 0.01 10 0.01 10 0.01 10 a a temperaturkoeffizient von peak (typ.) temperature coefficient of peak i f = 20 ma tc peak 0.04 0.03 0.04 nm/k temperaturkoeffizient von dom (typ.) temperature coefficient of dom i f = 20 ma tc dom 0.02 0.02 0.03 nm/k temperaturkoeffizient von v f (typ.) temperature coefficient of v f i f = 20 ma tc v ? 2.9 ? 3.2 ? 3.6 mv/k optischer wirkungsgrad (typ.) optical efficiency i f = 20 ma opt 268lm/w gruppe group blue verde true green wellenl ? ngengruppen werden mit einer stromeinpr ? gedauer von 25 ms und einer genauigkeit von ? nm ermittelt. min. max. min. max. min. max. 3 464 468 498 503 519 525 wavelength groups are tested at a current pulse duration of 25 ms and an accuracy of ? nm. 4 468 472 503 507 525 531 5 472 476 507 512 531 537
lb t673, lv t673, lt t673 2000-06-06 5 opto semiconductors relative spektrale emission i rel = f ( ), t a = 25 c, i f = 20 ma relative spectral emission v( ) = spektrale augenempfindlichkeit standard eye response curve abstrahlcharakteristik i rel = f ( ? ) radiation characteristic 0 400 true green 550 450 500 600 650 nm 700 ohl00492 i 20 40 60 80 % 100 rel verde blue v 0 0.2 0.4 1.0 0.8 0.6 ? 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01660 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
lb t673, lv t673, lt t673 2000-06-06 6 opto semiconductors durchla ? strom i f = f ( v f ) forward current t a = 25 c maximal zul ? ssiger durchla ? strom i f = f ( t ) max. permissible forward current relative lichtst ? rke i v / i v(20 ma) = f ( i f ) relative luminous intensity t a = 25 c maximal zul ? ssiger durchla ? strom i f = f ( t ) max. permissible forward current ohl00495 10 -1 2.5 3 3.5 4 4.5 v 5 0 10 1 10 10 2 5 5 ma 5 2 true green verde, blue i f v f ohl00825 0 0 ? c ma f i t 5 10 15 20 25 30 20 40 60 80 100 verde, true green blue temp. ambient a t ohl00494 10 -2 -1 10 0 10 10 1 5 5 -1 10 10 0 10 1 10 ma 2 i f v v (20 ma) i i ohl01087 0 0 20 40 60 80 ? c 100 t i f 5 10 15 20 25 30 ma temp. solder point s t verde, blue true green
lb t673, lv t673, lt t673 2000-06-06 7 opto semiconductors relative lichtst ? rke i v / i v(25 c) = f ( t a ) relative luminous intensity i f = 20 ma dominante wellenl ? nge dom = f ( i f ) dominant wavelength lv , t a = 25 c dominante wellenl ? nge dom = f ( i f ) dominant wavelength lb , t a = 25 c dominante wellenl ? nge dom = f ( i f ) dominant wavelength lt , t a = 25 c ohl00870 0 -10 v v (25 ? c) i i ? c v a t 10 30 50 70 100 0.2 0.4 0.6 0.8 1.2 i ohl00503 502 dom 0 f 10 20 30 40 ma 50 503 504 505 506 507 508 509 510 511 nm verde i ohl00500 469.0 dom 0 f 10 20 30 40 ma 50 469.5 470.0 470.5 471.0 471.5 472.5 nm blue i ohl00882 521 dom 0 f 10 20 30 40 ma 50 523 525 527 529 531 533 535 537 nm 541 true green 539
2000-06-06 8 opto semiconductors lb t673, lv t673, lt t673 ma ? zeichnung package outlines ma e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). kathodenkennung: abgeschr ? gte ecke cathode mark: bevelled edge gewicht / approx. weight: 0.03 g gply6724 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.12 (0.005) 0.18 (0.007) 0.5 (0.020) 1.1 (0.043) 3.3 (0.130) 3.7 (0.146) 0.4 (0.016) 0.6 (0.024) 2.6 (0.102) 3.0 (0.118) 2.1 (0.083) 2.3 (0.091) cathode marking 3.0 (0.118) 3.4 (0.134) (2.4) (0.095) 0.1 (0.004) (typ.) 4 ? 1
lb t673, lv t673, lt t673 2000-06-06 9 opto semiconductors l ? tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 ir-reflow l ? tprofil (nach ipc 9501) ir reflow soldering profile (acc. to ipc 9501) ohly0597 0 0 50 100 150 200 250 50 100 150 200 250 300 t t ? c s 240-245 ? c 10-40 s 183 ? c 120 to 180 s defined for preconditioning: up to 6 k/s ramp-down rate up to 6 k/s ramp-up rate up to 6 k/s defined for preconditioning: 2-3 k/s
2000-06-06 10 opto semiconductors lb t673, lv t673, lt t673 wellenl ? ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangsk ? hlung forced cooling normalkurve norm kurve grenzkurven limit curves
lb t673, lv t673, lt t673 2000-06-06 11 opto semiconductors empfohlenes l ? tpaddesign ir reflow l ? ten / wellenl ? ten (ttw) recommended solder pad ir reflow soldering / ttw soldering ohlp0970 4.5 2.6 1.5 1.5 4.5 2.6 paddesign for improved heat dissipation cu-area > 16 mm cu-fl ? che > 16 mm 2 f ? r verbesserte padgeometrie w ? rmeableitung 2 solder resist l ? tstopplack
2000-06-06 12 opto semiconductors lb t673, lv t673, lt t673 gurtung / polarit ? t und lage verpackungseinheit 2000/rolle, 180 mm oder 8000/rolle, 330 mm method of taping / polarity and orientation packing unit 2000/reel, 180 mm or 8000/reel, 330 mm oha02271 c a 3.6 8.1 3.5 1.75 4 1.5 2.9 4 2

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