2002. 5. 13 1/3 semiconductor technical data KIC7WZU04FK silicon monolithic cmos digital integrated circuit revision no : 0 triple inverter (unbuffer) features high output drive : 8ma(min.) @v cc =4.5v. super high speed operation : tpd 3.4ns(typ.) @v cc =5v, 50pf. operation voltage range : v cc(opr) =1.65~5.5v. dim millimeters a b d e us8 2.0 0.1 3.1 0.1 2.3 0.1 0.5 0.2+0.05/-0.04 0.7 0.1 0.12 0.04 0 ~ 0.1 c f g h a d d d c b e f g h 1 45 8 + _ + _ + _ + _ + _ maximum ratings (ta=25 ) marking lot no. zu04 type name characteristic symbol rating unit power supply voltage v cc -0.5~7 v dc input voltage v in -0.5~7 v dc output voltage v out -0.5~7 v input diode current i ik -50 ma output diode current i ok 50 ma dc output current i out 50 ma dc v cc /ground current i cc 100 ma power dissipation p d 200 mw storage temperature range t stg -65 150 lead temperature (10s) t l 260 pin connection(top view) 1 2 3 4 1y 3a 2y 8 7 6 5 v cc 1a 3y 2a gnd truth table a y l h h l logic diagram in a 1 out y
2002. 5. 13 2/3 KIC7WZU04FK revision no : 0 recommended operating conditions characteristic symbol rating unit supply voltage v cc 1.8~5.5 v 1.5~5.5 (note1) input voltage v in 0~5.5 v output voltage v out 0~5.5 (note2) v 0~v cc (note3) operating temperature t opr -40~85 note1 : data retention only. note2 : v cc =0v. note3 : high or low state electrical characteristics dc characteristics characteristic symbol test condition ta=25 ta=-40~85 unit v cc (v) min. typ. max. min. max. input voltage high level v ih - 1.8~2.7 0.85 v cc - - 0.85 v cc - v 3.0~5.5 0.8 v cc - - 0.8 v cc - low level v il - 1.8~2.7 - - 0.15 v cc - 0.15 v cc 3.0~5.5 - - 0.2 v cc - 0.3 v cc output voltage high level v oh v in =v il i oh =-100 a 1.65 1.55 1.65 - 1.55 - v 1.8 1.6 1.79 - 1.6 - 2.3 2.1 2.29 - 2.1 - 3.0 2.7 2.99 - 2.7 - 4.5 4.0 4.48 - 4.0 - v in =gnd i oh =-2ma 1.65 1.26 1.52 - 1.26 - i oh =-2ma 2.3 1.9 2.19 - 1.9 - i oh =-4ma 3.0 2.4 2.82 - 2.4 - i oh =-6ma 3.0 2.3 2.73 - 2.3 - i oh =-8ma 4.5 3.8 4.24 - 3.8 - low level v ol v in =v ih i ol =100 a 1.65 - 0.01 0.2 - 0.2 1.8 - 0.01 0.2 - 0.2 2.3 - 0.01 0.2 - 0.2 3.0 - 0.01 0.3 - 0.3 4.5 - 0.01 0.5 - 0.5 v in =v cc i ol =2ma 1.65 - 0.10 0.24 - 0.24 i ol =2ma 2.3 - 0.12 0.3 - 0.3 i ol =4ma 3.0 - 0.19 0.4 - 0.4 i ol =6ma 3.0 - 0.29 0.55 - 0.55 i ol =8ma 4.5 - 0.29 0.55 - 0.55 input leakage current i in v in =5.5v, gnd 0~5.5 - - 0.1 - 1.0 a quiescent supply current i cc v in =5.5v, gnd 1.65~5.5 - - 1.0 - 10 a peak supply current in analog operation i ccpeak v out =open v in =adjust for peak i cc current 1.8 - 0.2 - - - ma 2.5 - 2 - - - 3.3 - 5 - - - 5.0 - 15 - - -
2002. 5. 13 3/3 KIC7WZU04FK revision no : 0 output input input ccd l w l c l r cc v cc v t =3ns t =3ns 90% 50% 10% v cc gnd t plh t w t phl input output r f oh v v ol 50% 50% a c includes load and stray capacitance figure 1. ac test circuit figure 3. ac waveforms input prr=1.0mhz ; t =500ns r f input=ac waveform ; t =t =1.8ns figure 2. i test circui t prr=variable ; duty cycle=50% ac characteristics ac loading and waveforms note : c pd is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (i ccd ) at no output loading and operating at 50% duty cycle. (see figure 2.) c pd is related to i ccd dynamic operating current by the exprssion : i ccd =c pd v cc f in +i cc characteristic symbol test condition ta=25 ta=-40~85 unit v cc (v) min. typ. max. min. max. propagation delay (figures 1,3) t plh t phl c l =15pf, r l =1m 1.65 1.5 5.5 9.8 1.5 11.0 ns 1.8 1.5 4.6 8.1 1.5 8.9 2.5 0.2 1.2 3.3 5.7 1.2 6.3 3.3 0.3 0.8 2.7 4.1 0.8 4.5 5.0 0.5 0.5 2.2 3.3 0.5 3.6 t plh t phl c l =50pf, r l =500 3.3 0.3 1.2 4.0 6.4 1.2 7.0 ns 5.0 0.5 0.8 3.4 5.6 0.8 6.2 input capacitance c in 0 - 3 - - - pf power dissipation capacitance (figure 2) c pd (note) 3.3 - 3.5 - - - pf 5.0 - 5.5 - - -
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