to-257 050-7149 rev a 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com "coolmos ? comprise a new family of transistors developed by infineon technologies ag. "coolmos" is a trade- mark of infineon technologies ag" super junction mosfet c power semiconductors o o l mos ? ultra low r ds ( on ) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? hermetic to-257 package APT11N80GC3 800v 7.4a 0.500 ? ? ? ? ? static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 800 0.43 0.50 0.5 20 200 100 2.1 3 3.9 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 7.1a) zero gate voltage drain current (v ds = 800, v gs = 0v) zero gate voltage drain current (v ds = 800, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 680a) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 640v, i d = 7.4a, t j = 125c) repetitive avalanche current 6 repetitive avalanche energy 6 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj APT11N80GC3 800 7.4 22.2 20 30 77 0.62 -55 to 150 260 50 7.4 0.2 470
dynamic characteristics APT11N80GC3 050-7149 rev a 4-2004 thermal characteristics symbol r jc r ja min typ max 1.62 62 unit c/w characteristic junction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 0 to10v v dd = 400v i d = 11a @ 25c v gs = 10v v dd = 400 v i d = 11a r g = 7.5 ? min typ max 1585 770 18 60 8 30 25 15 70 80 710 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time current rise time turn-off delay time current fall time source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 7.4 22.2 1 1.2 550 10 6 symbol i s i sm v sd t rr q rr dv / dt characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -7.4a) reverse recovery time (i s = -7.4a, dl s /dt = 100a/s) v r = 640v reverse recovery charge (i s = -7.4a, dl s /dt = 100a/s) v r = 640v peak diode recovery dv / dt 5 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 194mh, r g = 25 ? , peak i l = 2.2a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 11a di / dt 700a/s v r v dss t j 150 c 6 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f apt reserves the right to change, without notice, the specifications and information contained herein. to-257aa package outline 10.67 (.420) 10.41 (.410) 5.33 (.210) 5.20 (.205) 19.05 (.750) 12.07 (.500) 10.92 (.430) 10.41 (.410) .889 (.035) dia. 3-plcs. .635 (.025) 2.54 (.100) bsc 5.08 (.200) 4.83 (.190) 3.05 (.120) bsc 1.14 (.045) 0.89 (.035) 3.81 (.150) dia. 3.56 (.140) drain source gate dimensions in millimeters and (inches) 16.89 (.665) 16.38 (.645) 13.64 (.537) 13.38 (.527) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved.
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