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june 2010 doc id 15847 rev 2 1/16 16 stgd10nc60sd STGF10NC60SD 10 a, 600 v fast igbt features optimized performance for medium operating frequencies up to 5 khz in hard switching low on-voltage drop (v ce(sat) ) very soft ultra fast antiparallel diode application motor drive description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram dpak to-220fp 1 2 3 1 3 tab table 1. device summary order codes marking package packaging stgd10nc60sdt4 gd10nc60sd dpak tape and reel STGF10NC60SD gf10nc60sd to-220fp tube www.st.com
contents stgd10nc60sd, STGF10NC60SD 2/16 doc id 15847 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 stgd10nc60sd, STGF10NC60SD electrical ratings doc id 15847 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25c 18 10 a i c (1) continuous collector current at t c = 100c 10 5 a i cl (2) 2. v clamp = 80%,(v ces ), t j =150 c, r g = 10 ? , v ge = 15 v. turn-off latching current 14 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa. pulsed collector current 25 a i f diode rms forward current at t c =25 c 10 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 20 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 60 25 w v iso isolation withstand voltage (rms) from all three leads to external heat sink (t = 1 sec; t c = 25 c) 2500 v t j operating junction temperature -55 to 150 c table 3. thermal data symbol parameter value unit dpak to-220fp r thj-case thermal resistance junction-case igbt 2.08 5 c/w thermal resistance junction-case diode 4.5 c/w r thj-amb thermal resistance junction-ambient 100 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- = electrical characteristics stgd10nc60sd, STGF10NC60SD 4/16 doc id 15847 rev 2 2 electrical characteristics (t j =25c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 5 a v ge = 15 v, i c = 5 a, t j = 125 c 1.45 1.45 1.65 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v i ces collector cut-off current (v ge =0) v ce = 600 v v ce =600 v, t j =125 c 150 1 a ma i ges gate-emitter leakage (v ce =0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 5 a 3.5 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 365 44 8 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 5 a, v ge = 15 v figure 18 - 18 8 3.5 - nc nc nc stgd10nc60sd, STGF10NC60SD electrical characteristics doc id 15847 rev 2 5/16 table 6. switching on/off (inductive load) symbol parameter test cond itions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 ? , v ge = 15 v, figure 19 - 19 4 1330 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 5 a r g = 10 ? , v ge = 15 v, t j = 125c figure 19 - 18 4.5 1000 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r g = 10 ? , v ge = 15 v, figure 19 - 100 160 205 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 5 a, r g = 10 ? , v ge = 15 v, t j = 125c figure 19 - 165 250 310 - ns ns ns table 7. switching energy (inductive load) symbol parameter test cond itions min. typ. max. unit e on (1) e off (2) e ts 1. eon is the turn-on losses when a typical diode is used in the test circuit in figure 17 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature. 2. turn-off losses included also include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 5 a r g = 10 ? , v ge = 15 v, figure 17 - 60 340 400 - j j j eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 5 a r g = 10 ? , v ge = 15 v, t j = 125c figure 17 - 90 540 630 - j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f =5 a i f =5 a, t j =125 c - 2 1.65 2.45 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =5 a, v r =40 v, di/dt=100 a/s figure 20 - 22 14 1.3 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =5 a, v r =40 v, t j =125 c, di/dt=100 a/s figure 20 - 34 35 2.1 ns nc a electrical characteristics stgd10nc60sd, STGF10NC60SD 6/16 doc id 15847 rev 2 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. collector-emitter on voltage vs collector current figure 5. collector-emitter on voltage vs temperature figure 6. normalized breakdown voltage vs temperature figure 7. normalized gate threshold vs temperature 0 5 10 15 20 25 3 0 0246 8 10 v ce (v) i c (a) v ge = 7 v v ge = 8 v v ge = 9 v v ge = 10 v v ge = 11 v v ge = 15 v am07262v1 0 5 10 15 20 25 3 0 0246 8 10 12 v ge (v) i c (a) v ce = 10 v am0726 3 v1 0.5 1 1.5 2 2.5 3 04 8 12 16 20 v ce( sa t) (v) i c (a) t j = -50 oc t j = 25 oc t j = 150 oc v ge = 15 v am07264v1 1 1.2 1.4 1.6 1. 8 2 -50 0 50 100 v ce( sa t) (v) t j (oc) i c = 10 a i c = 2.5 a i c = 5 a v ge = 15 v am0 8 265v1 0.9 0.95 1 1.05 1.1 1.15 -50 0 50 100 150 v ce s (norm) t j (oc) i c = 1 ma am07266v1 0.6 0.7 0. 8 0.9 1 1.1 -50 0 50 100 v ge(th) (norm) t j (c) v ge = v ce i c = 250 a am07267v1 stgd10nc60sd, STGF10NC60SD electrical characteristics doc id 15847 rev 2 7/16 figure 8. capacitance variations figure 9. gate charge vs gate-emitter voltage figure 10. switching losses vs temperature figure 11. switching losses vs gate resistance figure 12. switching losses vs collector current figure 13. diode forward on voltage 0 200 400 600 01020 3 040 c (pf) v ce f = 1 mhz v ge = 0 c ie s c oe s c re s am07269v1 0 4 8 12 16 20 04 8 12 16 v ge (v) q g (nc) v cc = 4 8 0 v i c = 5 a am0726 8 v1 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 2 5 5 0 7 5 1 0 0 e ( j ) t j ( c ) v c c = 4 8 0 v , v g e = 1 5 v i c = 5 a , r g = 1 0 ? e o n e o f f am07270v1 0 100 200 3 00 400 500 600 040 8 0 120 160 200 e ( j) r g ( ? ) v cc = 4 8 0 v, v ge = 15 v i c = 5 a, t j = 125 c e on e off am07271v1 0 100 200 3 00 400 500 12 3 4 e ( j) i c (a) v cc = 4 8 0 v, v ge = 15 v r g =10 ? , t j = 125 c e on e off am07272v1 ) ! & |