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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 6.7 i d @ v gs = 12v, t c = 100c continuous drain current 4.3 i dm pulsed drain current 26.8 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 149 mj i ar avalanche current 6.7 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt 4.2 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened jansr2n7498t2 power mosfet 200v, n channel thru-hole ( to-39) ref:mil-prf-19500/706 www.irf.com 1 technology to-39

product summary part number radiation level r ds(on) i d qpl part number IRHF57230SE 100k rads (si) 0.24 ? 6.7a jansr2n7498t2 IRHF57230SE pd-93857c features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight
IRHF57230SE, jansr2n498t2 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? 175 ? c/w note: corresponding spice and saber models are available on the internationl rectifier website.

electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.26 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.24 ? v gs = 12v, i d = 4.3a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 4.2 ? ? s ( )v ds > 15v, i ds = 4.3a i dss zero gate voltage drain current ? ? 10 v ds = 160v ,v gs =0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 47 v gs =12v, i d = 6.7a q gs gate-to-source charge ? ? 12 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 16 t d (on) turn-on delay time ? ? 25 v dd = 100v, i d = 6.7a t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 40 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 1014 ? v gs = 0v, v ds = 25v c oss output capacitance ? 182 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 8.8 ? na ? nh ns a source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 6.7 i sm pulse source current (body diode) ? ? 26.8 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 6.7a, v gs = 0v t rr reverse recovery time ? ? 274 ns t j = 25c, i f = 6.7a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.2 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
www.irf.com 3 IRHF57230SE, jansr2n7498t2 table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area

parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 160v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.222 ? v gs = 12v, i d = 4.3a r ds(on) static drain-to-source v sd diode forward voltage ? 1.5 v v gs = 0v, i d = 6.7a on-state resistance (to-39) ? 0.24 ? v gs = 12v, i d = 4.3a ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 200 200 200 200 200 i 59.8 341 32.5 200 200 200 185 120 au 82.3 350 28.4 200 200 150 50 25 0 50 100 150 200 250 0 -5 -10 -15 -20 vgs vds br i au
IRHF57230SE, jansr2n498t2 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 4 6 8 10 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j i d ? drain-to-source current (a) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 7.0a i d = 6.7a
www.irf.com 5 IRHF57230SE, jansr2n7498t2 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 7.0a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms 100s operation in this area limited by rds(on) i d = 6.7a
IRHF57230SE, jansr2n498t2 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 t , case temperature ( c) i , drain current (a) c d
www.irf.com 7 IRHF57230SE, jansr2n7498t2 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.0a 4.2a bottom 6.7a
IRHF57230SE, jansr2n498t2 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 6.6mh peak i l = 6.7a, v gs = 12v i sd 6.7a, di/dt 219a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions ? to-205af (modified to-39)
ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2005

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