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  pb rohs eh2500ettts-30.200m tr eh25 00 et t ts -30.200m tr series rohs compliant (pb-free) 5.0v 4 pad 5mm x 7mm ceramic smd hcmos/ttl high frequency oscillator frequency tolerance/stability 100ppm maximum operating temperature range -40c to +85c duty cycle 50 5(%) packaging options tape & reel nominal frequency 30.200mhz pin 1 connection tri-state (high impedance) electrical specifications nominal frequency 30.200mhz frequency tolerance/stability 100ppm maximum (inclusive of all conditions: calibration tolerance at 25c, frequency stability over the operating temperature range, supply voltage change, output load change, first year aging at 25c, shock, and vibration) aging at 25c 5ppm/year maximum operating temperature range -40c to +85c supply voltage 5.0vdc 10% input current 50ma maximum (no load) output voltage logic high (voh) 2.4vdc minimum with ttl load, vdd-0.4vdc minimum with hcmos load (ioh= -16ma) output voltage logic low (vol) 0.4vdc maximum with ttl load, 0.5vdc maximum with hcmos load (ioh= +16ma) rise/fall time 6nsec maximum (measured at 0.8vdc to 2.0vdc with ttl load; measured at 20% to 80% of waveform with hcmos load) duty cycle 50 5(%) (measured at 50% of waveform with ttl load or with hcmos load) load drive capability 10ttl load or 50pf hcmos load maximum output logic type cmos pin 1 connection tri-state (high impedance) tri-state input voltage (vih and vil) +2.2vdc minimum to enable output, +0.8vdc maximum to disable output (high impedance), no connect to enable output. absolute clock jitter 250psec maximum, 100psec typical one sigma clock period jitter 50psec maximum, 30psec typical start up time 10msec maximum storage temperature range -55c to +125c environmental & mechanical specifications esd susceptibility mil-std-883, method 3015, class 1, hbm: 1500v fine leak test mil-std-883, method 1014, condition a flammability ul94-v0 gross leak test mil-std-883, method 1014, condition c mechanical shock mil-std-883, method 2002, condition b moisture resistance mil-std-883, method 1004 moisture sensitivity j-std-020, msl 1 resistance to soldering heat mil-std-202, method 210, condition k resistance to solvents mil-std-202, method 215 solderability mil-std-883, method 2003 temperature cycling mil-std-883, method 1010, condition b vibration mil-std-883, method 2007, condition a www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 1 of 7
eh2500ettts-30.200m tr mechanical dimensions (all dimensions in millimeters) pin connection 1 tri-state 2 ground 3 output 4 supply voltage line marking 1 ecliptek 2 30.200m 3 xxxxxx xxxxxx=ecliptek manufacturing identifier 2.88 1.81 2.0 (x4) 2.2 (x4) www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 2 of 7 1.60 0.20 5.00 0.15 7.00 0.15 marking orient a tion 3.68 0.15 1.4 0.1 1.4 0.2 2.20 0.15 5.08 0.15 1 2 3 4 all t oler ances are 0.1 sug g ested solder p ad la y out solder land (x4) all dimensions in millimeters
eh2500ettts-30.200m tr www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 3 of 7 output disable (high imped ance st a te) output w a veform & timing dia gram v oh v ol 80% or 2.0v dc 50% or 1.4v dc 20% or 0.8v dc f all time rise time t w t duty cycle (%) = t w /t x 100 v ih v il t plz t pzl clock output tri-st a te input supply v oltage (v dd ) t est cir cuit f or ttl output output no connect or t r i-state ground + + + + _ _ _ _ p o w er supply v oltage meter current meter 0.01 f (note 1) 0.1 f (note 1) c l (note 3) r l (note 4) p o w er supply oscilloscope f requency counter probe (note 2) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . note 4: resistance v alue r l is sho wn in t ab le 1. see applicab le specification sheet f or 'load dr iv e capability'. note 5: all diodes are mmbd7000, mmbd914, or equiv alent. t ab le 1: r l resistance v alue and c l capacitance v alue vs . output load dr iv e capability output load drive capability r l v alue (ohms) c l v alue (pf) 10ttl 5ttl 2ttl 10lsttl 1ttl 390 780 1100 2000 2200 15 15 6 15 3
eh2500ettts-30.200m tr www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 4 of 7 supply v oltage (v dd ) t est cir cuit f or cmos output output no connect or t r i-state ground + + + _ _ _ p o w er supply 0.01 f (note 1) 0.1 f (note 1) c l (note 3) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . v oltage meter current meter oscilloscope f requency counter probe (note 2)
dia 50 min dia 20.2 min dia 13.0 0.2 2.5 min width 10.0 min depth t ape slot in core f or t ape star t dia 40 min access hole at slot location 1.5 min tape & reel dimensions *compliant to eia 481a eh2500ettts-30.200m tr 16.0 +0.3/-0.1 7.5 0.1 6.75 0.10 4.0 0.1 2.0 0.1 8.0 0.1 b0* 1.5 +0.1/-0.0 a0* 0.30 0.05 k0* 22.4 max 360 max quantity per reel: 1,000 units 16.4 +2/-0 www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 5 of 7
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods eh2500ettts-30.200m tr high temperature infrared/convection ts max to tl (ramp-up rate) 3c/second maximum preheat - temperature minimum (ts min) 150c - temperature typical (ts typ) 175c - temperature maximum (ts max) 200c - time (ts min) 60 - 180 seconds ramp-up rate (tl to tp) 3c/second maximum time maintained above: - temperature (tl) 217c - time (tl) 60 - 150 seconds peak temperature (tp) 260c maximum for 10 seconds maximum target peak temperature (tp target) 250c +0/-5c time within 5c of actual peak (tp) 20 - 40 seconds ramp-down rate 6c/second maximum time 25c to peak temperature (t) 8 minutes maximum moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 6 of 7
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods eh2500ettts-30.200m tr low temperature infrared/convection 240c ts max to tl (ramp-up rate) 5c/second maximum preheat - temperature minimum (ts min) n/a - temperature typical (ts typ) 150c - temperature maximum (ts max) n/a - time (ts min) 60 - 120 seconds ramp-up rate (tl to tp) 5c/second maximum time maintained above: - temperature (tl) 150c - time (tl) 200 seconds maximum peak temperature (tp) 240c maximum target peak temperature (tp target) 240c maximum 1 time / 230c maximum 2 times time within 5c of actual peak (tp) 10 seconds maximum 2 times / 80 seconds maximum 1 time ramp-down rate 5c/second maximum time 25c to peak temperature (t) n/a moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. low temperature manual soldering 185c maximum for 10 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) high temperature manual soldering 260c maximum for 5 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) www.ecliptek.com | specification subject to change without notice | rev f 3/12/2011 | page 7 of 7


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