ghr16 document number 88618 10-oct-05 vishay general semiconductor www.vishay.com 1 case style r-1 photoflash rectifier major ratings and characteristics i f(av) 500 ma v rrm 1600 v i fsm 20 a v f 1.5 v t rr 300 ns t j max. 175 c features ? glass passivated chip junction ? fast switching for high efficiency ? low leakage current ? high forward surge capability ? solder dip 260 c, 40 seconds typical applications for use in high voltage rectification of photoflash application mechanical data case: r-1 epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solder- able per j-std-002b and jesd22-b102d polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit maximum repetitive peak reverse voltage v rrm 1600 v maximum rms voltage v rms 1120 v maximum dc blocking voltage v dc 1600 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c l f(av) 500 ma peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 20 a maximum full load reverse current, full cycle average, 0.375" (9.5 mm) lead length at t l = 55 c i r(av) 100 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88618 10-oct-05 ghr16 vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol value unit maximum instantaneous forward voltage drop at 0.5 a v f 1.5 v maximum dc reverse current at rated dc blocking voltage at t a = 25 c i r 5.0 a maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 300 ns typical junction capacitance at 4.0 v, 1 mhz c j 10 pf figure 1. maximum forward current derating curve figure 2. maximum non-repetitive peak forward surge current am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 0.75 1.0 25 50 75 100 125 150 175 0.5 0.25 resisti v e or ind u cti v e load 0.375 (9.5mm) lead length single phase half wa v e60hz 0 20 10 30 1 100 10 peak for w ard s u rge c u rrent (a) 1 cycle nu m b er of cycles at 60 hz t j = t j max. 8 .3 ms single half sine-wa v e figure 3. typical instantaneous forward characteristics figure 4. typical junction capacitance 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 instantaneo u sfor w ard v oltage ( v ) 0.01 0.1 10 1 instantaneo u sfor w ard c u rrent (a) t j = 25 c p u lse width = 300 s 1% d u ty cycle re v erse v oltage ( v ) j u nction capacitance (pf) 1 0.1 10 100 30 10 1 t j = 25 c f = 1.0 mhz v sig = 50m v p-p
ghr16 document number 88618 10-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.125 (3.1 8 ) 0.115 (2.92) 0.100 (2.54) 0.090 (2.29) 0.025 (0.635) 0.023 (0.5 8 4) dia dia. case style r-1
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