2SK3911 2005-02-17 1 toshiba field effect transistor silicon n-channel mos type (mach ii -mosvi) 2SK3911 switching regulator applications ? small gate charge: qg = 60 nc (typ.) ? low drain-source on resistance: r ds (on) = 0.22 ? (typ.) ? high forward transfer admittance: |y fs | = 11 s (typ.) ? low leakage current: i dss = 500 a (v ds = 600 v) ? enhancement model: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 600 v drain-gate voltage (r gs = 20 k ? ) v dgr 600 v gate-source voltage v gss 30 v dc (note 1) i d 20 drain current pulse (note 1) i dp 80 a drain power dissipation (tc = 25c) p d 150 w single pulse avalanche energy (note 2) e as 792 mj avalanche current i ar 20 a repetitive avalanche energy (note 3) e ar 15 mj channel temperature t ch 150 c storage temperature range t stg -55~150 c thermal characteristics characteristic symbol max unit thermal resistance, channel to case r th (ch-c) 0.833 c/w thermal resistance, channel to ambient r th (ch-a) 50 c/w note 1: ensure that the channel temperature does not exceed 150c during use of the device. note 2: v dd = 90 v, t ch = 25c (initial), l = 3.46 mh, i ar = 20 a, r g = 25 ? note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita sc-65 toshiba 2-16c1b weight: 4.6 g (typ.) 1. gate 2. drain (heatsink) 3. source
2SK3911 2005-02-17 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i d = 10 a, v ds = 0 v 30 ? ? v drain cutoff current i dss v ds = 600 v, v gs = 0 v ? ? 500 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 10 a ? 0.22 0.32 ? forward transfer admittance ? y fs ? v ds = 10 v, i d = 10 a 3.0 11 ? s input capacitance c iss ? 4250 ? reverse transfer capacitance c rss ? 10 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 420 ? pf rise time t r ? 12 ? turn-on time t on ? 45 ? fall time t f ? 12 ? switching time turn-off time t off ? 80 ? ns total gate charge q g ? 60 ? gate-source charge q gs ? 50 ? gate-drain charge q gd v dd ? = 10 v, i d = 20 a ? 10 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 20 a pulse drain reverse current (note 1) i drp ? ? ? 80 a forward voltage (diode) v dsf i dr = 20 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 1350 ? ns reverse recovery charge q rr i dr = 20 a, v gs = 0 v, di dr /dt = 100 a/ s ? 24 ? c marking r l = 20 ? 0 v 10 v v gs v dd ? = 10 a v out 4.7 ? duty < = = 10 s k3911 toshiba lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
2SK3911 2005-02-17 3 i d ? v ds drain current i d (a) drain ? source voltage v ds (v) 0 20 4 12 8 16 0 2 10 4 6 8 10 8 5.5 6.5 v gs = 5 v common source tc = 25c pulse test i d ? v ds drain current i d (a) drain ? source voltage v ds (v) 0 50 10 30 20 40 4 0 20 816 common source tc = 25c pulse test v ds ? v gs drain ? source voltage v ds (v) gate ? source voltage v gs (v) 0 20 4 12 8 16 4 0 20 8 12 16 5 10 i d = 20 a common source tc = 25c pulse test 10 8 6 6.5 7 6 r ds (on) ? i d drain ? source on resistance r ds (on) (m ? ) drain current i d (a) 10 1000 1 100 v gs = 10 v common source tc = 25c pulse test 10 100 v gs = 5 v 5.5 7 12 i d ? v gs drain current i d (a) gate ? source voltage v gs (v) 0 50 10 20 40 2 0 10 6 8 100 25 tc = ? 55c common source v ds = 20 v pulse test ? y fs ? ? i d forward transfer admittance ? y fs ? (s) drain current i d (a) 0.1 100 10 0.1 100 10 30 4 1 1 common source v ds = 20 v pulse test tc = ? 55c 25 100
2SK3911 2005-02-17 4 gate threshold voltage v th (v) case temperature tc (c) v th ? tc common source v ds = 10 v i d = 1 ma pulse test 0 5 1 3 2 4 ? 40 ? 80 160 0 80 120 40 v gs = 0 v 1 3 10 5 drain ? source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) common source tc = 25c pulse test 0.1 100 10 1 0 ? 1.6 ? 0.4 ? 1.2 ? 0.8 i d = 20 a 10 5 common source v gs = 10 v pulse test r ds (on) ? tc drain ? source on resistance r ds (on) (m ) case temperature tc (c) 0 1000 200 600 400 800 ? 80 ? 40 160 0 80 120 40 capacitance c (pf) drain ? source voltage v ds (v) c ? v ds drain power dissipation p d (w) case temperature tc (c) p d ? tc 200 120 0 0 40 120 160 200 40 160 80 80 common source i d = 20 a tc = 25c pulse test 100 200 v dd = 400 v v ds v gs gate ? source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain ? source voltage v ds (v) 0 0 200 300 500 60 100 80 100 400 20 40 0 8 12 20 4 16 10000 c iss c oss c rss 1000 10 1 100 common source v gs = 0 v f = 1 mhz tc = 25c pulse test 0.1 1 10 100
2SK3911 2005-02-17 5 ? 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 ? v dd = 90 v, l = 3.46 mh ? ? ? ? ? ? ? ? ? ? ? ? = v dd b vdss b vdss 2 i l 2 1 as r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) 0.01 10 0.1 1 10 100 1 10 100 1 10 0.001 duty=0.5 0.2 0.1 0.05 0.02 0.01 single pulse t p dm t duty = t/t r th (ch-c) = 0.833c/w 0 25 200 400 600 1000 800 50 75 100 125 150 safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) drain ? source voltage v ds (v) 1 0.1 10 100 1000 10 1000 dc operation tc=25 100 s * 1 ms * i d max (pulse) * v dss max i d max (continuous) 100 0.01 1 * : single nonpetitive pulse tc = 25c curves must be derated linearly with increase in temperature
2SK3911 2005-02-17 6 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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