np n epi t a x i a l sil i con t r a n sis t o r s w mb t a 4 2 high voltage transistor die s i ze 0. 6 * 0. 6 m m gu a r a n teed p r o b ed c h a r a c te r isti c s ( t a = 25 ) limits characteristic symbol test conditions min typ max units collector-emitter breakdown voltage v ceo i c =1 .0 ma 30 0 - - v collector-base breakdown voltage v cbo i c = 100 u a collector cut-off current i cbo v cb =2 6 0v - - 1 00 na emitter cut-off current i e b o v e b =6v - - 10 0 na dc current gain h fe v ce =10v, i c =1ma v ce =10v, i c =10ma v ce =10v, i c =30ma 30 4 0 4 0 -- base-emitter saturation voltage v besat i c = 20m a , i b = 2 ma - - v collector-emitter saturation voltage v cesat i c =20ma, i b =2ma - - transition frequency f r v ce =20v, i c =10ma,f=10mhz 50 - - mhz collector-base capacitance c cb v cb =20v, f=1mhz - - 3.0 pf notes: due to probe testing limitations, only the dc parameters are tested. wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com s o t 23
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