SSM3K35MFV 2008-05-27 1 toshiba field-effect transistor silicon n-channel mos type SSM3K35MFV high-speed switching applications analog switch applications ? 1.2 v drive ? low on-resistance : r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d 180 drain current pulse i dp 360 ma drain power dissipation p d (note 1) 150 mw channel temperature t ch 150 c storage temperature t stg ?55~150 c note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.585 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 10 a drain?source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 v 20 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 50 ma (note 2) 115 ? ? ms i d = 50 ma, v gs = 4 v (note 2) ? 1.5 3 i d = 50 ma, v gs = 2.5 v (note 2) ? 2 4 i d = 5 ma, v gs = 1.5 v (note 2) ? 3 8 drain?source on-resistance r ds (on) i d = 5 ma, v gs = 1.2 v (note 2) ? 5 20 input capacitance c iss ? 9.5 ? reverse transfer capacitance c rss ? 4.1 ? output capacitance c oss v ds = 3 v, v gs = 0 v, f = 1 mhz ? 9.5 ? pf turn-on time t on ? 115 ? switching time turn-off time t off v dd = 3 v, i d = 50 ma, v gs = 0 to 2.5 v ? 300 ? ns drain?source forward voltage v dsf i d = - 180 ma, v gs = 0 v (note 2) ? -0.9 -1.2 v note 2: pulse test unit: mm 1.gate 2.source 3.drain 1.20.05 0.320.05 1 2 3 0.40.4 0.220.05 0.80.05 0.80.05 1.20.05 0.50.05 0.130.05 jedec - jeita - toshiba 2-1l1b weight: 1.5 mg (typ.)
SSM3K35MFV 2008-05-27 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = 3 v d.u. < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 2.5 v 0 10 s 50 r l (c) v out t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) kz 1 2 3 1 2 3
SSM3K35MFV 2008-05-27 3 i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta drain?source voltage v ds (v) gate?source voltage v gs (v) drain current i d (ma) gate?source voltage v gs (v) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain?source on-resistance r ds (on) ( ? ) drain?source on-resistance r ds (on) ( ? ) drain?source on-resistance r ds (on) ( ? ) 0 0 200 12 1.5 0.5 100 300 400 v gs = 1.2 v 1.5 1.8 common source ta = 25c 4 10 2.5 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c 0 1 10 1000 10 5 100 04 10 8 26 0 10 5 0 10 5 ? 50 50 150 0 100 r ds (on) ? v gs gate?source voltage v gs (v) drain?source on-resistance r ds (on) ( ? ) 0 4 10 8 2 6 0 5 10 25c common source i d = 5 ma ta = 100c ? 25c 25c common source i d = 50 ma ta = 100c ? 25c common source ta = 25c 2.5 v v gs = 1.2 v 4 v 1.5 v 2.5 v, 50 ma v gs = 1.2 v, i d = 5 ma 4 v, 50 ma 1.5 v, 5 ma common source
SSM3K35MFV 2008-05-27 4 ? y fs ? ? i d drain current i d (ma) forward transfer admittance ? y fs ? (ms) 1 10 100 1000 1 3 5 10 30 50 100 300 500 drain current i d (ma) switching time t (ns) c ? v ds drain ? source voltage v ds (v) capacitance c (pf) c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c 10 100 1 5 50 1 10 100 5 50 0.5 i dr ? v ds drain?source voltage v ds (v) drain reverse current i dr (ma) 0.01 1 100 0.1 10 100 0 ? 1.5 ? 0.5 ? 1 p d ? ta ambient temperature ta (c) drain power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120 v th ? ta ambient temperature ta (c) gate threshold voltage v th (v) ? 50 50 150 0 100 0 1.0 0.5 common source i d = 1 ma v ds = 3 v common source v ds = 3 v ta = 25c common source v gs = 0 v g d s i dr mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 585 mm 2 ) 25c ? 25c ta = 100c 0.1 t ? i d 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 1000 common source v dd = 3 v v gs = 0 to 2.5 v ta = 25c t off t f t on t r
SSM3K35MFV 2008-05-27 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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