si5933dc vishay siliconix new product document number: 71238 s-01375erev. a, 26-jun-00 www.vishay.com faxback 408-970-5600 1 dual p-channel 1.8-v (g-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 20 0.110 @ v gs = 4.5 v 3.6 20 0.160 @ v gs = 2.5 v 3.0 0.240 @ v gs = 1.8 v 2.4 bottom view 1206-8 chipfe t s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet marking code dc xx lot traceability and date code part # code
parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 3.6 2.7 a continuous drain current (t j = 150 c) a t a = 85 c i d 2.6 1.9 a pulsed drain current i dm 10 a continuous source current (diode conduction) a i s 1.8 0.9 maximum power dissipation a t a = 25 c p d 2.1 1.1 w maximum power dissipation a t a = 85 c p d 1.1 0.6 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 5 sec r thja 50 60 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 90 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 40 notes a. surface mounted on 1o x 1o fr4 board.
si5933dc vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71238 s-01375erev. a, 26-jun-00
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 10 a dis os r i a v gs = 4.5 v, i d = 2.7 a 0.095 0.110 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 2.2 a 0.137 0.160 v gs = 1.8 v, i d = 1 a 0.205 0.240 forward transconductance a g fs v ds = 10 v, i d = 2.7 a 7 s diode forward voltage a v sd i s = 0.9 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v10vv45vi27a 4.4 6.5 c gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 2.7 a 1.4 nc gate-drain charge q gd 0.65 turn-on delay time t d(on) v10vr10 16 25 rise time t r v dd = 10 v, r l = 10 i1av 45vr6 30 45 turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 30 45 ns fall time t f 27 40 source-drain reverse recovery time t rr i f = 0.9 a, di/dt = 100 a/ s 20 40 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 5 thru 3 v t c = 55 c 125 c 25 c output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 1.5 v 2 v 2.5 v
si5933dc vishay siliconix new product document number: 71238 s-01375erev. a, 26-jun-00 www.vishay.com faxback 408-970-5600 3
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 0 1 2 3 4 5 012345 0 0.1 0.2 0.3 0.4 0.5 0.6 0246810 v ds drain-to-source voltage (v) c rss c oss c iss v ds = 10 v i d = 2.7 a i d drain current (a) v gs = 4.5 v i d = 2.7 a v gs = 2.5 v v gs = 4.5 v gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (nc) c capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 0 0.1 0.2 0.3 0.4 012345 t j = 150 c i d = 2.7 a 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s v gs = 1.8 v 0 200 400 600 800 0 4 8 12 16 20 t j = 25 c
si5933dc vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71238 s-01375erev. a, 26-jun-00
0 30 50 10 20 power (w) single pulse power time (sec) 40 1 100 600 10 10 1 10 2 10 4 10 3 10 3 10 2 1 10 600 10 1 10 4 100 0.2 0.1 0.0 0.1 0.2 0.3 0.4 50 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 3 10 2 110 10 1 10 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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