2sa1469 / 2sc3746 no.1973-1/4 applications ? various inductance lamp drivers for electrical equipment. ? inverters, converters (flash, fluorescent lamp lighting circuit). ? power amp (high power car stereo, motor controller). ? high-speed switching (switching regulator, driver). features ? low saturation voltage. ? excellent current dependence of h fe . ? short switching time. ? micaless package facilitating mounting. specifications ( ) : 2sa1469 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)80 v collector-to-emitter voltage v ceo (--)60 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)5 a collector current (pulse) i cp (--)7 a collector dissipation p c 2w tc=25 c20w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 ma dc current gain h fe v ce =(--)2v, i c =(--)1a 100* 280* * : the 2sa1469/2sc3746 are classified by 1a h fe as follows : continued on next page. rank r s h fe 100 to 200 140 to 280 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en1973b 72506fa ms im tc-00000058 / o3103tn (kt) / 71598ha (kt) / 3277ki / n265ki any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sa1469 / 2sc3746 pnp / npn epitaxial planar silicon transistors 60v / 5a high-speed switching applications
2sa1469 / 2sc3746 no.1973-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 100 mhz collector-to-emitter saturation voltage v ce (sat) i c =(--)2.5a, i b =(--)0.125a (--)0.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)1ma, i e =0a (--)80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)60 v emitter-to-base breakdown voltage v (br)ebo i e =(--)1ma, i c =0a (--)5 v turn-on time t on see specified test circuit. 0.1 m s storage time t stg see specified test circuit. 0.5 m s fall time t f see specified test circuit. 0.1 m s package dimensions switching time test circuit unit : mm (typ) 7508-002 i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a itr03647 -- 0.2 -- 0.4 -- 0.6 -- 0.8 -- 1.0 -- 1.2 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 itr03648 1.0 1.2 0.6 0.8 0.2 0.4 0 0 1 2 3 4 5 6 2sa1469 v ce = --2v 2sc3746 v ce =2v ta=120 c 25 c --40 c ta=120 c 25 c --40 c 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 123 1 : base 2 : collector 3 : emitter sanyo : to-220ml pw=20 m s d.c. 1% input v cc =20v 50 w r b 10 w i b1 i b2 100 m f 470 m f v be = --5v v r + + r l output 20i b1 = --20i b2 =i c =2a for pnp, the polarity is reversed.
2sa1469 / 2sc3746 no.1973-3/4 h fe -- i c h fe -- i c f t -- i c f t -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector current, i c -- a gain-bandwidth product, f t -- mhz v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03653 57 -- 0.1 7 -- 1.0 2 -- 0.01 23 357 -- 10 23 5 57 0.1 7 1.0 2 0.01 23 357 10 23 5 -- 0.1 -- 0.01 3 5 2 -- 1.0 3 5 2 -- 10 3 5 2 -- 100 3 5 2 0.1 0.01 3 5 2 1.0 3 5 2 10 3 5 2 100 3 5 2 2sa1469 i c / i b = 20 2sa1469 itr03654 2sc3746 i c / i b = 20 2sc3746 itr03655 dc operation 10ms 100ms -- 10 5 7 2 3 5 3 5 -- 100 7 2 2 35 7 35 -- 0.1 7 7 2 -- 1.0 -- 10 i cp = --7a i c = --5a 1ms itr03656 dc operation 10ms 100ms 10 5 7 2 3 5 3 5 100 7 2 2 35 7 35 0.1 7 7 2 1.0 10 i cp =7a i c =5a 1ms 2sa1469 v ce = --5v -- 0.01 -- 0.1 23 3 57 -- 1.0 7 57 -- 10 5 237 5 2 7 10 5 7 100 5 3 2 2 itr03651 2sc3746 v ce =5v 0.01 0.1 23 3 57 57 1.0 2357 10 7 5 2 7 10 5 7 100 5 3 2 2 itr03652 2sa1469 v ce = --2v 2sc3746 v ce =2v 1000 100 10 itr03649 2 3 57 2 3 57 22 3 57 -- 0.01 -- 0.1 -- 1.0 -- 10 3 5 7 2 3 5 7 2 3 5 7 0.01 0.1 1.0 2 3 57 2 3 57 10 7 22 35 7 100 10 5 7 1000 5 3 2 3 7 5 3 2 itr03650 ta=120 c 25 c --40 c ta=120 c 25 c --40 c tc=25 c single pulse tc=25 c single pulse
2sa1469 / 2sc3746 no.1973-4/4 ps collector dissipation, p c -- w 0 20 40 60 80 100 120 140 160 0 0.5 2.0 1.0 1.5 2.5 it11350 it11351 0 20 40 60 80 100 120 140 160 0 5 20 10 15 25 2sa1469 / 2sc3746 2sa1469 / 2sc3746 p c -- ta no heat sink ambient temperature, ta -- c collector dissipation, p c -- w p c -- tc case temperature, tc -- c specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of july, 2006. specifications and information herein are subject to change without notice.
|
