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www.irf.com 1 9/8/08 IRFB4332PBF notes through are on page 8 description hexfet ? power mosfet

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features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 175c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability s d g
to-220ab d s d g gds gate drain source v ds min 250 v v ds (avalanche) typ. 300 v r ds(on) typ. @ 10v 29 m t j max 175 c key parameters absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.38 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 max. 42 230 60 30 120 300 -40 to + 175 10lb in (1.1n m) 390 200 2.6

2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 170 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 29 33 m v gs(th) gate threshold voltage 3.0 ??? 5.0 v v gs(th) / t j gate threshold voltage coefficient ??? -14 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 100 ??? ??? s q g total gate charge ??? 99 150 nc q gd gate-to-drain charge ??? 35 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 5860 ??? c oss output capacitance ??? 530 ??? pf c rss reverse transfer capacitance ??? 130 ??? c oss eff. effective output capacitance ??? 360 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? 60 (body diode) a i sm pulsed source current ??? ??? 230 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 190 290 ns q rr reverse recovery charge ??? 820 1230 nc mosfet symbol v ds = 25v, i d = 35a v dd = 125v, i d = 35a, v gs = 10v conditions and center of die contact v dd = 200v, v gs = 15v, r g = 4.7 v ds = 200v, r g = 5.1 , t j = 25c l = 220nh, c= 0.3 f, v gs = 15v v ds = 200v, r g = 5.1 , t j = 100c v ds = 25v v ds = v gs , i d = 250 a v ds = 250v, v gs = 0v v gs = 0v, v ds = 0v to 200v v ds = 250v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.3 f, v gs = 15v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 35a t j = 25c, i f = 35a, v dd = 50v di/dt = 100a/ s t j = 25c, i s = 35a, v gs = 0v showing the integral reverse p-n junction diode. typ. max. ? = 1.0mhz, ??? 230 39 35 ??? ??? 300 ??? ??? 520 ??? ??? 920 ???

www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 5.5v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 5.5v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60 s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 35a v gs = 10v 150 160 170 180 190 200 v ds, drain-to -source voltage (v) 0 200 400 600 800 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3 f 100c 25c 100 110 120 130 140 150 160 170 i d, peak drain current (a) 0 200 400 600 800 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c

4 www.irf.com fig 11. maximum drain current vs. case temperature fig 8. typical source-drain diode forward voltage fig 12. maximum safe operating area fig 7. typical e pulse vs.temperature fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 25 50 75 100 125 150 temperature (c) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c= 0.3 f c= 0.2 f c= 0.1 f 1 10 100 1000 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 35a 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1 sec 10 sec operation in this area limited by r ds (on) 100 sec 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v

www.irf.com 5 fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.00 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) t j = 25c t j = 125c i d = 35a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.3a 13a bottom 35a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 25 50 75 100 125 150 175 case temperature (c) 0 20 40 60 80 100 120 140 160 180 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1 s duty cycle = 0.25 half sine wave square pulse 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.077468 0.000097 0.169886 0.001689 0.13319 0.012629 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri

6 www.irf.com fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 20a. gate charge test circuit fig 20b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 18.

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms pulse a pulse b t st dri ver dut l c vcc rg rg b a ipulse

8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/08
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.39mh, r g = 25 , i as = 35a.
pulse width 400 s; duty cycle 2%. r is measured at
half sine wave with duty cycle = 0.25, ton=1 sec. applicable to sustain and energy recovery applications. to-220ab packages are not recommended for surface mount application.

int ernat ional part number rect ifier lot code assembly logo year 0 = 2000 dat e code we e k 19 line c lot code 1789 example : t his is an irf1010 note: "p" in assembly line position i ndi cates "l ead - f r ee" in the assembly line "c" as s emble d on ww 19, 2000

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