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d a t a sh eet product speci?cation file under discrete semiconductors, sc13b april 1995 discrete semiconductors bsn254 bsn254a n-channel enhancement mode vertical d-mos transistors
april 1995 2 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a description n-channel enhancement mode vertical d-mos transistors in to-92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, high-speed and line-transformer drivers. features direct interface to c-mos, ttl, etc. high-speed switching no second breakdown low r ds (on) quick reference data pinning (bsn254) pinning (bsn254a) drain-source voltage v ds max. 250 v drain current (dc) i d max. 300 ma total power dissipation up to t amb =25 cp tot max. 1 w drain-source on-resistance typ. max. 5.0 7.0 w w i d = 300 ma; v gs =10v r ds(on) gate-source threshold voltage v gs(th) max. 2 v 1 = gate 2 = drain 3 = source 1 = source 2 = gate 3 = drain pin configuration - to-92 variant fig.1 simplified outline and symbol. note: various pinnings are available on request. handbook, halfpage 1 3 2 mam146 s d g april 1995 3 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a ratings limiting values in accordance with the absolute maximum system (iec 134) thermal resistance note 1. device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm 10 mm. characteristics t j =25 c unless otherwise speci?ed drain-source voltage v ds max. 250 v gate-source voltage (open drain) v gso max. 20 v drain current (dc) i d max. 300 ma drain current (peak) i dm max. 1.2 a total power dissipation up to t amb =25 c (note 1) p tot max. 1 w storage temperature range t stg - 65 to + 150 c junction temperature t j max. 150 c from junction to ambient (note 1) r th j-a = 125 k/w drain-source breakdown voltage min. 250 v i d =10 m a; v gs =0 v (br) dss drain-source leakage current max. 1 m a v ds = 200 v; v gs =0 i dss gate-source leakage current max. 100 na v gs =20v; v ds =0 i gss gate threshold voltage min. max. 0.8 2.0 v v i d = 1 ma; v ds =v gs v gs(th) drain-source on-resistance typ. max. 5.0 7.0 w w i d = 300 ma; v gs =10v r ds (on) i d = 20 ma; v gs = 2.4 v r ds(on) max. 10 w transfer admittance min. typ. 200 400 ms ms i d = 300 ma; v ds =25v y fs input capacitance at f = 1 mhz typ. max. 65 90 pf pf v ds = 25 v; v gs =0 c iss april 1995 4 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a output capacitance at f=1mhz typ. max. 20 30 pf pf v ds = 25 v; v gs =0 c oss feedback capacitance at f=1mhz typ. max. 5 15 pf pf v ds = 25 v; v gs =0 c rss switching times (see figs 2 and 3) typ. max. 5 10 ns ns i d = 250 ma; v dd =50v; v gs = 0 to 10 v t on t off typ. max. 20 30 ns ns fig.2 switching times test circuit. handbook, halfpage msa631 50 w v dd = 50 v i d 10 v 0 v fig.3 input and output waveforms. handbook, halfpage mbb692 10 % 90 % 90 % 10 % t on t off output input fig.4 power derating curve. handbook, halfpage 0 1.2 0.8 0.4 0 50 100 200 150 mrc238 p tot (w) t amb ( c) fig.5 output characteristics; t j =25 c; typical values. handbook, halfpage 010 2 0 0.4 0.8 1.2 1.6 246 i d (a) 8 mda712 v ds (v) v gs = 10 v 2 v 4 v 3 v 6 v 5 v april 1995 5 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a fig.6 transfer characteristic; v ds =10v; t j =25 c; typical value. handbook, halfpage 010 2 0 0.4 0.8 1.2 1.6 246 i d (a) 8 mda713 v gs (v) fig.7 on-resistance as a function of drain current; t j =25 c; typical values. handbook, halfpage 16 0 48 r dson ( w ) i d (ma) 12 10 4 10 3 10 2 10 mda714 v gs = 10 v 5 v 4 v 3 v fig.8 capacitances as a function of drain-source voltage; v gs = 0; f = 1 mhz; t j =25 c; typical values. handbook, halfpage 025 200 0 40 80 120 160 51015 c (pf) 20 mda715 v ds (v) c rss c iss c oss fig.9 v gs(th) at 1 ma; typical values k v gs(th) at t j v gs(th) at 25 c ---------------------------------------- ; = handbook, halfpage - 50 0 50 t j ( c) k 150 1.4 1.2 0.8 0.6 1 100 mda716 april 1995 6 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a fig.10 typical values. k r ds on () at t j r ds (on) at 25 c ------------------------------------------- - ; = - 50 0 50 150 2.8 0.4 2.4 2 100 1.6 1.2 0.8 mda717 k t j ( c) (1) (2) april 1995 7 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a package outlines unit a references outline version european projection issue date iec jedec eiaj mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) max l 2 max 2.5 2.5 b 1 0.66 0.56 dimensions (mm are the original dimensions) notes 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 variant to-92 sc-43 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads (on-circle) sot54 variant 1 2 3 l 2 e 1 e 97-04-14 april 1995 8 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. application information where application information is given, it is advisory and does not form part of the speci?cation. april 1995 9 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a notes april 1995 10 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a notes april 1995 11 philips semiconductors product speci?cation n-channel enhancement mode vertical d-mos transistors bsn254 bsn254a notes internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca54 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 137107/00/01/pp12 date of release: april 1995 document order number: 9397 750 02462 1 of 2 go to philips semiconductors' home page select & go... start catalog & datasheets catalog by function discrete semiconductors audio clocks and watches data communications microcontrollers peripherals standard analog video wired communications wireless communications catalog by system automotive consumer multimedia systems communications pc/pc-peripherals cross reference models packages application notes selection guides other technical documentation end of life information datahandbook system relevant links about catalog tree about search about this site subscribe to enews catalog & datasheets search bsn254; bsn254a bsn254; bsn254a information as of 2000 bsn254; bsn254a; n - channel enhancement mode vertical d - mos transistors n-channel enhancement mode vertical d-mos transistors in to-92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, high-speed and line- transformer drivers. l direct interface to c-mos, ttl, etc. l high-speed switching l no second breakdown l low r ds (on) ? description ? features ? datasheet ? products, packages, availability and ordering ? find similar products ? to be kept informed on bsn254; bsn254a, description features datasheet type nr. title publication release date datasheet status page count file size (kb) bsn254; bsn254a n-channel enhancement mode vertical d-mos transistors 01-apr-95 product specification 12 75 products, packages, availability and ordering partnumber north american partnumber order code (12nc) marking/packing package device status bsn254 bsn254 amo 9340 049 30126 standard marking * ammopack, radial sot54 full production bsn254a bsn254a amo 9340 039 60126 standard marking * ammopack, sot54 full production 2 of 2 please read information about some discontinued variants of this product . bsn254; bsn254a links to the similar products page containing an overview of products that are similar in function or related to the part number(s) as listed on this page. the similar products page includes products from the same catalog tree(s) , relevant selection guides and products from the same functional category. amo ammopack, radial find similar products: copyright ? 2000 royal philips electronics all rights reserved. terms and conditions . |
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