HSU276 silicon schottky barrier diode for mixer ade-208-078f(z) rev 6 features high forward current, low capacitance. ultra small resin package (urp) is suitablefor high density surface mounting and high speed assembly. ordering information type no. laser mark package code HSU276 3 urp outline cathode mark mark 12 1. cathode 2. anode 3
HSU276 2 absolute maximum ratings (ta = 25c) item symbol value unit reverse voltage v r 3v average rectified current i o 30 ma junction temperature tj 125 c storage temperature tstg C55 to +125 c electrical characteristics (ta = 25c) item symbol min typ max unit test condition reverse voltage v r 3vi r = 1 ma reverse current i r 50av r = 0.5v forward current i f 35 ma v f = 0.5v capacitance c 0.85 pf v r = 0.5v, f = 1 mhz esd-capability *1 30 v c = 200pf , both forward and reverse direction 1 pulse. note: 1. failure criterion ; i r 3 100a at v r = 0.5 v
HSU276 3 main characteristic forward voltage v f (v) forward current i f (a) reverse voltage v r (v) reverse current i r (a) fig.1 forward current vs.forward voltage fig.2 reverse current vs.reverse voltage capacitance c (pf) fig.3 capacitance vs.reverse voltage reverse voltage v r (v) 10 -8 10 -3 10 -4 10 -5 10 -6 10 -7 0 0.2 0.4 0.6 0.8 1.0 10 -9 10 -2 04 16 10 10 -6 10 -9 -8 12 8 20 10 -7 10 -10 10 10 1.0 10 -1 f=1mhz 10 -1 1.0
HSU276 4 package dimensions unit : mm 1.25?.15 2.5?.15 1.7?.15 0.3?.15 0.9?.15 cathode mark 1 2 hitachi code jedeccode eiajcode weight(g) urp
0.004 1. cathode 2. anode 0 ?` 0.10 3
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