t410 t435 march 1995 high performance triacs symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) to220ab sot194/sot82 tc = 110 c4 a isowatt220ab tc = 100 c i tsm non repetitive surge peak on-state current ( tj initial = 25 c) tp = 8.3 ms 35 a tp = 10 ms 30 i 2 ti 2 t value tp = 10 ms 4.5 a 2 s di/dt critical rate of rise of on-state current gate supply : i g = 500ma di g /dt = 1a/ m s repetitive f = 50 hz 10 a/ m s non repetitive 50 tstg tj storage and operating junction temperature range - 40 to + 150 - 40 to + 125 c c tl maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 c to220ab (plastic) . i trms =4a . v drm = 400 v to 800 v . sensitive gate : i gt 10 ma . high commutation : (di/dt)c > 3.5 a/ms features symbol parameter t410 or t435 unit -400 -600 -700 -800 v drm v rrm repetitive peak off-state voltage tj = 125 c 400 600 700 800 v absolute ratings (limiting values) the t410 / t435 high voltage triac families are high performance planar diffused pnpn de- vices glass passivated technology. packaged either in to220ab, sot82, sot194 and isowatt220ab these products are in- tented for all bi-directional switch applications. description a1 a2 g sot194 (plastic) a1 a2 g a1 a2 g sot82 (plastic) a1 a2 g isowat t220ab (plastic) 1/7
gate characteristics (maximum values) p g(av) =1w p gm =10w(tp=20 m s) i gm = 4 a (tp = 20 m s) v gm = 16 v (tp = 20 m s). symbol test conditions quadrant suffix unit t410 t435 i gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 10 35 ma v gt v d =12v (dc) r l =33 w tj=25 c i-ii-iii max 1.5 v v gd v d =v drm r l =3.3k w tj=125 c i-ii-iii min 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m si tm = 5.5a tj=25 c i-ii-iii typ 2 m s i l i g =1.2 i gt tj=25 c i-ii-iii max 30 60 ma i h *i t = 100ma gate open tj=25 c max 15 35 ma v tm *i tm = 5.5a tp= 380 m s tj=25 c max 1.75 v i drm i rrm v drm rated v rrm rated tj=25 c max 0.01 ma tj=125 c max 2 dv/dt * linear slope up to v d =67%v drm gate open v drm = 400v / 600v tj=125 c min 50 250 v/ m s v drm = 700v / 800v 30 250 (di/dt)c * dv/dt = 0.1v/ m s tj=125 c min 2.7 4.4 a/ms dv/dt = 20v/ m s min 1.8 2.7 electrical characteristics symbol parameter value unit rth (j-a) junction to ambient sot82 / sot194 100 c/w to220ab 60 isowatt 220ab 50 rth (j-c) dc junction to case for dc sot82 / sot194 to220ab 3.5 c/w isowatt 220ab 5.3 rth (j-c) ac junction to case for 360 conduction angle ( f= 50 hz) sot82 / sot194 to220ab 2.6 c/w isowatt 220ab 4 thermal resistances * for either polarity of electrode a 2 voltage with reference to electrode a 1 . t410 / t435 2/7
fig.1 : maximum rms power dissipation versus rms on-state current (f=50hz). (curves are cut off by (di/dt)c limitation) fig.2 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (to220ab / sot82 / sot 94). fig.4 : rms on-state current versus case temperature. ordering information t 4 10 - 800 t triac planar family i trms 4a i gt 10 ma / 35 ma v drm /v rrm 400v/600v/700v/800v packages t = to220ab d = sot82 k = sot194 w = isowatt220ab fig.3 : correlation between maximum rms power dissipation and maximum allowable temperatures (t amb and t case ) for different thermal resistances heatsink + contact (isowatt220ab). t410 / t435 3/7
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.7 : relative variation of gate trigger current and holding current versus junction temperature. fig.8 : non repetitive surge peak on-state current versus number of cycles. fig.9 : non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of i 2 t. fig.10 : on-state characteristics (maximum values). 1e-3 1e-2 1e-1 1e +0 1 e +1 1 e +2 5 e +2 0.01 0.1 1 zth/rth zt h( j-c) zth(j-a) tp(s) fig.5 : relative variation of thermal impedance versus pulse duration (sot82 / sot194 / to220ab only). 1e-3 1e-2 1e-1 1e +0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth (j-c) zt h( j-a) tp (s) fig.6 : relative variation of thermal impedance versus pulse duration ( isowat t220ab only). t410 / t435 4/7
package mechanical data to220ab plastic cooling method : c marking : type number weight : 2 g recommended torque value : 0.55 m.n. maximum torque value : 0.70 m.n. package mechanical data isowatt220ab plastic cooling method : c marking : type number weight : 2.1g recommended torque value : 0.55 m.n. maximum torque value : 0.70 m.n. ref. dimensions millimeters inches min. max. min. max. a 10.0 10.4 0.393 0.409 b 15.2 15.9 0.598 0.626 c 13 14 0.511 0.551 d 6.2 6.6 ? ? ? ? ? 0.244 0.260 e 16.4 typ. 0.645 typ. f 3.5 4.2 0.137 0.165 g 2.65 2.95 0.104 0.116 h 4.4 4.6 0.173 0.181 i 3.75 3.85 0.147 0.151 j 1.23 1.32 0.048 0.051 k 1.27 typ. 0.050 typ. l 0.49 0.70 0.019 0.027 m 2.4 2.72 0.094 0.107 n 4.95 5.15 0.194 0.203 n1 2.40 2.70 0.094 0.106 o 1.14 1.70 0.044 0.067 p 0.61 0.88 0.024 0.034 ref. dimensions millimeters inches min. max. min. max. a 10 10.4 0.393 0.409 b 15.9 16.4 0.626 0.645 b1 9.8 10.6 0.385 0.417 c 28.6 30.6 1.126 1.204 d 16 typ 0.630 typ e 9 9.3 0.354 0.366 h 4.4 4.6 0.173 0.181 i 3 3.2 0.118 0.126 j 2.5 2.7 0.098 0.106 l 0.4 0.7 0.015 0.027 m 2.5 2.75 0.098 0.108 n 4.95 5.2 0.195 0.204 n1 2.4 2.7 0.094 0.106 o 1.15 1.7 0.045 0.067 p 0.75 1 0.030 0.039 t410 / t435 5/7
package mechanical data sot82 plastic marking : type number weight : 0.72g h d e g l f m ca b ref. dimensions millimeters inches min. max. min. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.425 c 2.4 2.7 0.094 0.106 d 0.7 0.9 0.027 0.035 e 2.2 typ. 0.087 typ. f 0.49 0.75 0.019 0.029 g 4.15 4.65 0.163 0.183 h (1) 2.54 0.100 l 15.7 typ. 0.618 typ. m 1.0 1.3 0.039 0.051 (1) within this region the cross-sec- tion of the leads is uncontrolled t410 / t435 6/7
package mechanical data sot194 plastic marking : type number weight : 0.68g d e g o f l n m ca b i foot print 6.7 8.5 3.5 4.5 1 1.2 ref. dimensions millimeters inches min. max. min. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.425 c 2.4 2.7 0.094 0.106 d 0.7 0.9 0.027 0.035 e 2.2 typ. 0.087 typ. f 0.49 0.75 0.019 0.020 g 4.15 4.65 0.163 0.183 i 1.3 typ. 0.051 typ. l 0.1 typ. 0.004 typ. m 4 typ 0.158 typ n 2 typ. 0.078 typ. o 6 typ. 0.236 typ. a 45 45 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-t homson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the nether- lands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. t410 / t435 7/7
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