amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 1 rohs compliant primary applications ? test equipment ? electronic warfare ? radar features ? 0.1 watt saturated output power level ? 4 db typical noise figure ? select-at-test biasing ? msag? process description the maamgm0002-die is a 0.1w distributed amplifier with on-chip bias networks. this product is fully matched to 50 ohms on both the input and output. the mmic can be used as a broadband amplifier stage or as a driver stage in high power applications. each device is 100% rf tested to ensure performance compliance. the part is fabricated using m/a-com?s gaas multifunction self- aligned gate process. m/a-com?s msag? process featur es robust silicon-like manufac- turing processes, planar processing of ion implanted transistors, mul- tiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when em ployed in hermetic packaging. also available in: samples description ceramic package sample board (die) sample board (packaged) part number maamgm0002 maamgm0002-die-smb maamgm0002-SMB electrical characteristics: t b = 40c 1 , z 0 = 50 , v dd = 5v, i dq = 75 ma 2 , p in = 13 dbm 1. t b = mmic base temperature 2. adjust v gg between ?1.0 and ?0.3 v to achieve i dq indicated. parameter symbol typical units bandwidth f ghz output power p out 21 dbm power added efficiency pae 12 % 1-db compression point p1db 20 dbm small signal gain g 9 db input vswr f = 2 ghz vswr 1.7:1 gate current i gg < 2 ma drain current i dd 100 ma output toi otoi 31 dbm output vswr f = 2 ghz vswr 1.7:1 noise figure nf 4 db minimum 1.0 19.5 7 maximum 18.0 2:1 2:1 150
amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 2 rohs compliant maximum ratings 3 parameter symbol absolute maximum units input power p in 19.0 dbm drain voltage v dd +7.0 v gate voltage v gg -1.5 v gate voltage, select at test hi, mid, lo -6.0 v quiescent drain current (no rf) i dq 120 ma quiescent dc power dissipation (no rf) p diss 0.5 w junction temperature t j 170 c storage temperature t stg -55 to +150 c parameter symbol min typ max unit drain voltage v dd 4.5 5.0 5.5 v gate voltage v gg -1.0 -0.6 -0.3 v gate voltage, select at test hi, mid, lo -5.0 v input power p in 13 17 dbm thermal resistance jc 91.2 c/w mmic base temperature t b note 5 c recommended operating conditions 4 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps according to which configuration you are using. select-at-test gate bias figure 5a. direct gate bias figure 5b. 1. with v dd = 0, apply v gg = -5v to hi, mid or lo for desired i dq . 2. set v dd = 5v. confirm i dq . 3. power down sequence in reverse. 4.turn off v gg last. 1. with v dd = 0 v, set v gg = -0.8 v. 2. set v dd = 5 v. 3. adjust v gg for desired i dq . 4. power down sequence in reverse. 5. turn off v gg last. 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i dq
amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 3 rohs compliant figure 1. output power and power added efficiency vs. frequency at v dd = 5v, p in = 14dbm. 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 frequency (ghz) pout pae 0 1 2 3 4 5 6 7 8 9 10 11 12 24681012141618 frequency (ghz) gain, idq = 25% gain, idq = 35% gain, idq = 50% nf, idq = 25% nf, idq = 35% nf, id q = 50% figure 2. gain and noise figure vs idq as a relative percentage of idss (50% idss ~ 100 ma). 1 2 3 4 5 6 0.5 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 20.5 22.5 frequency (ghz) input vswr out p ut vswr figure 3. input and output vswr.
amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 4 rohs compliant mechanical information chip size: 2.98 x 1.98 x 0.075 mm ( 118 x 78 x 3 mils) pad size ( m) rf: in, out 100 x 100 drain supply voltage: v dd 150 x 150 direct gate supply voltage: v gg 150 x 150 size (mils) 4 x 4 6 x 6 6 x 6 select-at-test gate supply voltage: hi, mid, lo 150 x 150 6 x 6 ground: gnd 150 x 150 6 x 6 bond pad dimensions figure 4. die layout 0.152mm. 1.325mm. 0 0 0.569mm. 1.828mm. 1.980mm. 2.980mm. 1.925mm. 2.853mm. 2.225mm. 1.094mm. 1.625mm. 0.970mm. hi mid lo gnd in out v dd v gg 2.525mm. 0.127mm.
amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 5 rohs compliant hi mid lo gnd in out v dd v gg 100 pf 100 pf rf in rf out 0.1 f v gg 0.1 f v dd pad applied voltage (v) % idss hi -5 50 mid -5 35 lo -5 25 figure 5a. required bonding for select-at-test gate bias configuration . support circuitry typical of mmic characte rization fixture for cw testing. wirebond required to reference on-chip se- lect-at-test bias net- work.
amplifier, distributed, 0.1w 1.0-18.0 ghz maamgm0002-die m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. rev e 6 rohs compliant figure 5b. required bonding for direct application of gate bias . support circuitry typical of mmic char acterization fixture for cw testing. pad applied voltage (v) % idss v gg -1.0 to -0.3 25 - 50 hi mid lo gnd in out v dd v gg 100 pf 100 pf rf in rf out 0.1 f v gg 0.1 f v dd assembly instructions: die attach: use ausn (80/20) 1 mil. preform sold er. limit time @ 310 c to less than 7 minutes. refer to application note an3017 for more detailed information. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad c onnections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shorte st length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. die handling: refer to application note an3016. assembly and bonding diagram
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