View IRFH5204PBF_6484885.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

08/30/11 IRFH5204PBF hexfet power mosfet notes through are on page 8 features and benefits www.irf.com 1 features benefits pqfn 5x6 mm applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications ? boost converters note form quantity irfh5204trpbf pqfn 5mm x 6mm tape and reel 4000 irfh5204tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack low rdson (< 4.3 m ) lower conduction losses low thermal resistance to pcb (< 1.2c/w) enables better thermal dissipation 100% rg tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? 1 absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 22 100 400 20 40 18 100 -55 to + 150 3.6 0.029 105 v ds 40 v r ds(on) max (@v gs = 10v) 4.3 m q g (typical) 43 nc r g (typical) 1.7 i d (@t c(bottom) = 25c) 100 a

2 www.irf.com s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 1.2 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 40 ??? ??? v ? . 0.0 . . .0 .0 . 0 0 100 100 1 .1 .0 1 1 1 1 1. . 1 1 . 0 1 0 avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 30 45 ns q rr reverse recovery charge ??? 128 192 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 100 a v gs = 10v typ. v ds = 40v, v gs = 0v v ds = 16v, v gs = 0v v dd = 20v, v gs = 10v ??? r g =1.8 v ds = 15v, i d = 50a v ds = 40v, v gs = 0v, t j = 125c a i d = 50a i d = 50a v gs = 0v v ds = 25v t j = 25c, i f = 50a, v dd = 20v di/dt = 500a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 102 50 ? = 1.0mhz conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 50a ??? ??? 400 ??? ??? 100 mosfet symbol na ns a pf nc v ds = 20v ??? v gs = 20v v gs = -20v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.00v 6.00v 5.50v 5.00v 4.75v bottom 4.50v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.00v 6.00v 5.50v 5.00v 4.75v bottom 4.50v 60 s pulse width tj = 150c 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 3 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8v i d = 50a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 500 a id = 150 a id = 100 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.9a 16a bottom 50a 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c

6 www.irf.com fig 16. for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s

www.irf.com 7 pqfn 5x6 outline "b" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)

8 www.irf.com qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.081mh, r g = 50 , i as = 50a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2011 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel

▲Up To Search▲

Price & Availability of IRFH5204PBF

	To Download IRFH5204PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .